Cryogenic Characterization of 22nm FDSOI CMOS Technology for Quantum Computing ICs

Bonen, Shai; Alakuşu, Utku; Duan, Yan; Gong, Ming; Dadash, M. Sadegh; Lucci, L.; Daughton, David R.; Adam, Gina C.; Iordanescu, S.; Pasteanu, M.; Giangu, Ioana; Jia, Huayong; Gutierrez, L. E.; Chen, W. T.; Messaoudi, Nizar; Harame, D.L.; Müller, A.; Mansour, R.R.; Asbeck, P.M.; Voinigescu, S.P.

doi:10.1109/led.2018.2880303

Cited by 81 publications

(51 citation statements)

References 11 publications

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“…As mentioned in Section II-A, the anomalous behavior previously reported in [25] was identified as an artifact due to an excessive parasitic resistance in series to the gate of the DUT. Although those artifacts have been eliminated in this paper, discontinuities in the SS were still observed at 4.2 K both in the multiplexed devices and in separate bare, pad-accessible devices, similar to the observations in prior work [7], [29]- [32]. Such behavior was attributed to resonant electron/hole tunneling through a quantum dot (QD) [29] or through the electronic states of dopants [7], [31], [32], to the freeze-out of superficial impurities [30] or to conduction at the device edges [30].…”

Section: Discussionsupporting

confidence: 87%

Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures

Hart

Babaie

Charbon

et al. 2020

IEEE J. Electron Devices Soc.

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Section: Discussionsupporting

confidence: 87%

Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures

Hart

Babaie

Charbon

et al. 2020

IEEE J. Electron Devices Soc.

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“…They are based on a fully connected trapped-ion network [31] and on superconducting charge qubits [32]. However, the quest for alternative approaches is still very active, especially in the field of semiconductor nanoelectronics, including devices based on commercial CMOS technology [33]. The system analyzed in this work, namely flying qubits encoded by the states of carriers propagating in ESs, seems a promising candidate due to its robustness against decoherence and its integrability with traditional semiconductor technology.…”

Section: Quantum Gates With Flying Qubitsmentioning

confidence: 99%

Quantum computing with quantum-Hall edge state interferometry

Bordone

Bellentani

Bertoni

2019

Semicond. Sci. Technol.

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Electron interferometers based on Hall edge states proved to be robust demonstrators of the coherent quantum dynamics of carriers. Several proposals to expose their capability to build and control quantum entanglement and to exploit them as building block for quantum computing devices has been presented. Here, we review the time-dependent numerical modeling of Hall interferometers operating at the single-carrier level at integer filling factor (FF). By defining the qubit state either as the spatial localization (at FF 1) or the Landau index (at FF 2) of a single carrier propagating in the edge state, we show how a generic one-qubit rotation can be realized. By a proper design of the 2DEG potential landscape, an entangling two-qubit gate can be implemented by exploiting Coulomb interaction, thus realizing a universal set of quantum gates. We also assess how the shape of the edge confining potential affects the visibility of the quantum transformations.

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“…Some works have studied bulk MOSFETs operation at cryogenic temperature emphasizing in particular kink behavior and freeze-out effects in those devices [7,15,[20][21][22][23][24]. Recently, outstanding characteristics have been demonstrated at 4.2 K on advanced CMOS technologies [19,[25][26][27], in particular for Fully Depleted Silicon-On-Insulator (FDSOI) [28][29][30][31][32]. Ultrathin film FDSOI devices (with typically silicon thickness less than 10 nm) are immune to kink effects [33], and freeze-out has finally little impact on the DC characteristics of MOSFETs in advanced technologies [34].…”

Section: Introductionmentioning

confidence: 99%

Low Temperature Characterization and Modeling of FDSOI Transistors for Cryo CMOS Applications

Cassé¹,

Ghibaudo²

2022

Low-Temperature Technologies and Applications

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The wide range of cryogenic applications, such as spatial, high performance computing or high-energy physics, has boosted the investigation of CMOS technology performance down to cryogenic temperatures. In particular, the readout electronics of quantum computers operating at low temperature requires larger bandwidth than spatial applications, so that advanced CMOS node has to be considered. FDSOI technology appears as a valuable solution for co-integration between qubits and consistent engineering of control and read-out. However, there is still lack of reports on literature concerning advanced CMOS nodes behavior at deep cryogenic operation, from devices electrostatics to mismatch and self-heating, all requested for the development of robust design tools. For these reasons, this chapter presents a review of electrical characterization and modeling results recently obtained on ultra-thin film FDSOI MOSFETs down to 4.2 K.

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Cryogenic Characterization of 22nm FDSOI CMOS Technology for Quantum Computing ICs

Cited by 81 publications

References 11 publications

Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures

Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures

Quantum computing with quantum-Hall edge state interferometry

Low Temperature Characterization and Modeling of FDSOI Transistors for Cryo CMOS Applications

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