Cryogenic small-signal and noise performance of 32nm SOI CMOS

IEEE J. Solid-State Circuits

Incandela

Dijk

et al. 2018

356

169

A fault-tolerant quantum computer with millions of quantum bits (qubits) requires massive yet very precise control electronics for the manipulation and readout of individual qubits. CMOS operating at cryogenic temperatures down to 4 K (cryo-CMOS) allows for closer system integration, thus promising a scalable solution to enable future quantum computers. In this paper, a cryogenic control system is proposed, along with the required specifications, for the interface of the classical electronics with the quantum processor. To prove the advantages of such a system, the functionality of key circuit blocks is experimentally demonstrated. The characteristic properties of cryo-CMOS are exploited to design a noise-canceling low-noise amplifier for spin-qubit RF-reflectometry readout and a class-F 2,3 digitally controlled oscillator required to manipulate the state of qubits.

Section: Low-noise Amplifier For Spin-qubit Reflectometrymentioning

confidence: 99%

Cryo-CMOS Circuits and Systems for Quantum Computing Applications

IEEE J. Solid-State Circuits

Incandela

Dijk

et al. 2018

356

169

“…On the contrary, carrier mobility increases, offering higher driving currents [23], and thermal noise is lower, potentially allowing a lower power consumption. However, the noise power spectral density does not scale linearly with temperature and is only expected to be approximately 10× lower at 3 K compared with 300 K [26]. Some devices are not strongly affected by the cryogenic operation, e.g., the thin-film resistors used in this work show negligible change at 5 K compared with 300 K. The capacitance of metal-oxide-metal capacitors and the inductance of on-chip inductors are expected to slightly change at cryogenic temperatures, while the inductor quality factor can double [27].…”

Section: Introductionmentioning

confidence: 99%

A Scalable Cryo-CMOS Controller for the Wideband Frequency-Multiplexed Control of Spin Qubits and Transmons

Dijk

IEEE J. Solid-State Circuits

Subramanian

et al. 2020

Building a large-scale quantum computer requires the co-optimization of both the quantum bits (qubits) and their control electronics. By operating the CMOS control circuits at cryogenic temperatures (cryo-CMOS), and hence in close proximity to the cryogenic solid-state qubits, a compact quantumcomputing system can be achieved, thus promising scalability to the large number of qubits required in a practical application. This work presents a cryo-CMOS microwave signal generator for frequency-multiplexed control of 4 × 32 qubits (32 qubits per RF output). A digitally intensive architecture offering full programmability of phase, amplitude, and frequency

“…The design of solid-state electronics at cryogenic temperatures has triggered the need for characterization of active and passive components as required to reliably predict the performance of cryogenic radio-frequency integrated circuits (RFIC) [9]. To some extent, this has been pursued by the scientific community in the case of active devices, which is evident from papers that show DC characterization [10], [11], RF and noise characterization [12], device mismatch [13], [14] of bulk CMOS, as well as DC characterization [15], [16], small-signal and noise characterization [17] of SOI CMOS devices in different technology nodes. In the case of passive devices, cryogenic characterization of off-chip discrete commercial off-the-shelf capacitors and resistors [18], [19] proved that the capacitance/resistance can change drastically at those temperatures depending on the material, thus affecting circuit performance.…”

Section: Introductionmentioning

confidence: 99%

Characterization and Analysis of On-Chip Microwave Passive Components at Cryogenic Temperatures

IEEE J. Electron Devices Soc.

Mehrpoo

Ruffino

et al. 2020

This paper presents the characterization and modeling of microwave passive components in TSMC 40-nm bulk CMOS, including metal-oxide-metal (MoM) capacitors, transformers, and resonators, at deep cryogenic temperatures (4.2 K). To extract the parameters of the passive components, the pad parasitics were de-embedded from the test structures using an open fixture. The variations in capacitance, inductance and quality factor are explained in relation to the temperature dependence of the physical parameters, and the resulting insights on the modeling of passives at cryogenic temperatures are provided. Modeling the characteristics of on-chip passive components, presented for the first time down to 4.2 K, is essential in designing cryogenic CMOS radio-frequency integrated circuits, a promising candidate to build the electronic interface for scalable quantum computers.