Crystal growth technology of binary and ternary II–VI semiconductors for photonic applications

Trivedi, Sudhir; Wang, Chen-Chia; Kutcher, Susan; Hömmerich, U.; Pałosz, W.

doi:10.1016/j.jcrysgro.2007.12.032

Cited by 37 publications

(14 citation statements)

References 26 publications

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“…In spite of these difficulties, TM:II-VI single crystals with good laser characteristics were reported by several groups. More details on TM doped II-VI crystal fabrication are available in the following publications: Chromium doped-ZnSe (PVT [17,18]), CdSe (PVT [19], gradient freezing [20]), CdS 1−x Se x (PVT [19,21]), CdTe (Bridgman [22]), Cd 1−x Mn x Te (Bridgman [22,23]); Iron dopedZnSe (PVT [17]), CdSe (Bridgman [24]), CdTe (Bridgman [24]), Cd 1−x Mn x Te (Bridgman [12]). …”

Section: Crystal Growthmentioning

confidence: 99%

Progress in Cr²⁺and Fe²⁺doped mid‐IR laser materials

Mirov

Fedorov

Moskalev

et al. 2010

Laser & Photonics Reviews

210

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Recent progress in chromium and iron doped II-VI semiconductor materials makes them the laser sources of choice when one needs a compact system with tunability over 1.9-5.1 μm. Output powers exceeding 10 W and efficiency up to 70% were demonstrated in several Cr doped semiconductors. The unique combination of technological (low-cost ceramic material) and spectroscopic characteristics makes these materials ideal candidates for mid-IR tunable laser systems. This article reviews transition metal doped II-VI materials and recent progress in Cr-and Fe-doped solid-state mid-IR lasers.Critical areas driving future progress in Cr-and Fe-doped chalcogenide middle infrared lasers: fabrication of binary and ternary II-VI ceramic gain media with low phonon cut-off, low optical losses and high design flexibility; high performance laser design with improved characteristics in power (power scaling to dozens of Watts), spectral (spectral coverage over 1.8-6 μm), temporal (frequency comb generation), and pump domains (electrically pumped Cr-and Fe-doped II-VI quantum confined structures).

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Section: Crystal Growthmentioning

confidence: 99%

Progress in Cr²⁺and Fe²⁺doped mid‐IR laser materials

Mirov

Fedorov

Moskalev

et al. 2010

Laser & Photonics Reviews

210

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“…The poor conductivity of these materials at the growth temperatures leads to crystal fluid concave shaped interface. The various growth techniques used are Epitaxial growth technologies and bulk crystal growth [13], [14]. The epitaxial growth techniques are useful in device applications.…”

Section: Growth Techniquesmentioning

confidence: 99%

Epitaxial Lattice Matching and the Growth Techniques of Compound Semiconductors for their Potential Photovoltaic Applications

Husain

Hasan

2018

J. Mod. Mater.

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A B S T R A C TThis paper presents the recent advances in semiconductor alloys for photovoltaic applications. The two main growth techniques involved in these compounds are metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), that has also been discussed. With these techniques, hetero-structures can be grown with a high efficiency. A combination of more than one semiconductor like GaAs, InGaAs and CuInGaAs increases the range of their electrical and optical properties. A large range of direct band gap, high optical absorption and emission coefficients make these materials optimally suitable for converting the light to electrical energy. Their electronic structures reveal that they are highly suitable for photovoltaic applications also because they exhibit spin orbit resonance and metal/semiconductor transitions. The dissociation energy has also been discussed in reference to the increased stability of these compounds.

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“…In fact, Cd 1−x Mn x Te crystals can be used as substrates for the epitaxial growth due to the variable lattice constant as a function of the Mn content to match the lattice of the epitaxy layer [15]. Moreover, Cd 1−x Mn x Te is demonstrated to be a good candidate to compete with Cd 1−x Zn x Te in the X-ray detector application, because Mn distributes more homogeneously than Zn and that is an excellent alternative for room temperature mid-infrared photonic devices [16,17]. II-VI semiconductors form a unique system where Mn is an isoelectronic magnetic impurity, so that carrier density can be controlled independently of magnetic ion concentration.…”

Section: Introductionmentioning

confidence: 99%

Calculation of band offsets in Cd1−xXxTe alloys, X=Zn, Mg, Hg and Mn and magnetic effects in CdMnTe

Nasrallah

Mnasri

Sfina

et al. 2011

Journal of Alloys and Compounds

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Crystal growth technology of binary and ternary II–VI semiconductors for photonic applications

Cited by 37 publications

References 26 publications

Progress in Cr²⁺and Fe²⁺doped mid‐IR laser materials

Progress in Cr²⁺and Fe²⁺doped mid‐IR laser materials

Epitaxial Lattice Matching and the Growth Techniques of Compound Semiconductors for their Potential Photovoltaic Applications

Calculation of band offsets in Cd1−xXxTe alloys, X=Zn, Mg, Hg and Mn and magnetic effects in CdMnTe

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Crystal growth technology of binary and ternary II–VI semiconductors for photonic applications

Cited by 37 publications

References 26 publications

Progress in Cr2+and Fe2+doped mid‐IR laser materials

Progress in Cr2+and Fe2+doped mid‐IR laser materials

Epitaxial Lattice Matching and the Growth Techniques of Compound Semiconductors for their Potential Photovoltaic Applications

Calculation of band offsets in Cd1−xXxTe alloys, X=Zn, Mg, Hg and Mn and magnetic effects in CdMnTe

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Progress in Cr²⁺and Fe²⁺doped mid‐IR laser materials

Progress in Cr²⁺and Fe²⁺doped mid‐IR laser materials