Crystal Structure and Transport in Merged InAs Nanowires MBE Grown on (001) InAs

Kang, Jung-Hyun; Cohen, Yonatan; Ronen, Yuval; Heiblum, Moty; Buczko, R.; Kacman, P.; Popovitz‐Biro, Ronit; Shtrikman, Hadas

doi:10.1021/nl402571s

Cited by 41 publications

(75 citation statements)

References 33 publications

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“…An important requirement is that the junction between the branches has small reflection amplitude for an incoming electron. While such structures can be processed ex-situ using top-down lithography in 2D materials, VLS grown structures can be fabricated in-situ by using the crystallography of the substrate [96][97][98][99][100][101][102]. For example, instead of a (111) substrate we can use a (001) substrate where the growth direction can be turned into a non-vertical direction.…”

Section: A Semiconductor Growthmentioning

confidence: 99%

Majorana zero modes in superconductor–semiconductor heterostructures

et al. 2018

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Realizing topological superconductivity and Majorana zero modes in the laboratory is one of the major goals in condensed matter physics. We review the current status of this rapidly-developing field, focusing on semiconductor-superconductor proposals for topological superconductivity. Material science progress and robust signatures of Majorana zero modes in recent experiments are discussed. After a brief introduction to the subject, we outline several next-generation experiments probing exotic properties of Majorana zero modes, including fusion rules and non-Abelian exchange statistics. Finally, we discuss prospects for implementing Majorana-based topological quantum computation in these systems.

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Section: A Semiconductor Growthmentioning

confidence: 99%

Majorana zero modes in superconductor–semiconductor heterostructures

et al. 2018

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“…These kinked InP nanowires are then used as stems for the growth of InSb nanowires (Figure c). As already reported, (001) substrates are ideal candidates for the growth of complex structures since two <111>B directions are available. To be more precise, on an (001) III‐V substrate there are 4 <111> directions pointing upwards, two of which correspond to <111>A and two to <111>B directions.…”

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confidence: 90%

Rationally Designed Single‐Crystalline Nanowire Networks

et al. 2014

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“…Therefore, crystal structure control technology for NW fabrication has become a focus of the current research. MBE is a feasible method to grow GaSb NWs which has been used to produce a number of different III-V NWs, including GaN, GaAs, InAs and InSb structures [72][73][74]. In MBE, the vapor-liquid-solid (VLS) mechanism is the most extensively used growth mechanism.…”

Section: Low-dimensional Nanostructures Of Gasb Materialsmentioning

confidence: 99%

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

et al. 2017

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Groups III-V semiconductors have received a great deal of attention because of their potential advantages for use in optoelectronic and electronic applications. Gallium antimonide (GaSb) and GaSb-related semiconductors, which exhibit high carrier mobility and a narrow band gap (0.725 eV at 300 K), have been recognized as suitable candidates for high-performance optoelectronics in the mid-infrared range. However, the performances of the resulting devices are strongly dependent on the structural and emission properties of the materials. Enhancement of the crystal quality, adjustment of the alloy components, and improvement of the emission properties have therefore become the focus of research efforts toward GaSb semiconductors. Molecular beam epitaxy (MBE) is suitable for the large-scale production of GaSb, especially for high crystal quality and beneficial optical properties. We review the recent progress in the epitaxy of GaSb materials, including films and nanostructures composed of GaSb-related alloys and compounds. The emission properties of these materials and their relationships to the alloy components and material structures are also discussed. Specific examples are included to provide insight on the common general physical and optical properties and parameters involved in the synergistic epitaxy processes. In addition, the further directions for the epitaxy of GaSb materials are forecasted.

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Crystal Structure and Transport in Merged InAs Nanowires MBE Grown on (001) InAs

Cited by 41 publications

References 33 publications

Majorana zero modes in superconductor–semiconductor heterostructures

Majorana zero modes in superconductor–semiconductor heterostructures

Rationally Designed Single‐Crystalline Nanowire Networks

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

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