Crystal Structure as an Origin of High-Anisotropy Field of FeCoB Films With Ru Underlayer

Hashimoto, A.; Hirata, Keisuke; Matsuu, T.; Saito, Shin; Nakagawa, Shigeki

doi:10.1109/tmag.2008.2002252

Cited by 33 publications

(21 citation statements)

References 7 publications

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“…Relatively large residual internal stress σ was observed at B content around 6%. This result implied that an appropriate amount of B in the film plays an important role to fix the lattice distortion of the FeCoB crystallites which may be caused by the oblique incidence of sputtered particles to the substrate with its incident direction parallel along the easy axis of the film [1]. Such a high distortion causes an anisotropic stress resulting in the origin of the high H k [3].…”

Section: Resultsmentioning

confidence: 99%

“…Easy axis of magnetic anisotropy in a plane of Ru/FeCoB film appears along the parallel direction to the facing direction of the targets in the FTS system [1][2][3]. In this paper, we define easy and hard axis directions as being parallel to the target and the orthogonal directions, respectively.…”

Section: Methodsmentioning

confidence: 99%

“…FeCoB films prepared on the Ru underlayer by facing targets sputtering (FTS) technique revealed high in-plane magnetic anisotropy field H k of 500 Oe as well as large saturation magnetization 4πM s of 22 kG [1]. The origin of such a high H k is attributed to the distortion of crystallite lattice and directional alignment of FeCo crystallites in the film.…”

Section: Introductionmentioning

confidence: 99%

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FeCoB Films with Large Saturation Magnetization and High Magnetic Anisotropy Field to Attain High Ferromagnetic Resonance Frequency

Nakagawa¹,

Hirata²

2013

Journal of Magnetics

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FeCoB films were being prepared on a Ru underlayer by using the oblique incidence of sputtered and backscattered particles which have a high in-plane magnetic anisotropy field H k above 400 Oe. It is suitable to attain such deposition condition when facing targets sputtering system. The in-plane X-ray diffraction analysis clarified that there is anisotropic residual stress which is the origin of the high in-plane magnetic anisotropy. The directional crystalline alignment and inclination of crystallite growth were also observed. Such anisotropic crystalline structures may affect the anisotropic residual stress in the films. The B content of 5.6 at.% was appropriate to induce such anisotropic residual stress and H k of 410 Oe in this experiment. The film with B content of 6 at.% possessed large saturation magnetization of 22 kG and high H k of 500 Oe. The film exhibited high ferromagnetic resonance frequency of 9.2 GHz.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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FeCoB Films with Large Saturation Magnetization and High Magnetic Anisotropy Field to Attain High Ferromagnetic Resonance Frequency

Nakagawa¹,

Hirata²

2013

Journal of Magnetics

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“…(110) crystallites. 5 The directionally dispersed alignment is effective to attain high H k . In the next experiment, we defined the dispersion ratio of (110) as the ratio of FWHM of the diffraction profiles along the facing axis to that along the parallel axis.…”

Section: Resultsmentioning

confidence: 99%

“…stress induced under appropriate deposition conditions was found to be an origin of high H k . 5 However, a mechanism of the inducement of such an anisotropic residual stress is still an unsolved problem. In this study, Si/NiFe/Ru/FeCoB multilayered films were prepared to investigate anisotropically developed FeCo crystallites and influence of Ru crystallites in Ru underlayer on the directional FeCo crystalline alignment.…”

Section: Introductionmentioning

confidence: 99%

Directional Alignment of FeCo Crystallites in Si/NiFe/Ru/FeCoB Multilayer with High Anisotropy Field Above 500 Oe

Hirata¹,

Gomi²,

Nakagawa³

2011

J. Nanosci. Nanotech.

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In-plane magnetic anisotropy and crystal structure of FeCoB layer on Si/NiFe/Ru underlayer were investigated by using X-Ray Diffraction (XRD) measurement. A pole-figure measurement of XRD showed directionally tilted alignment of FeCo crystallites in Si/NiFe/Ru/FeCoB multilayered film with high in-plane anisotropy field H(k) but no directional alignment was found in FeCoB single layered film. The higher H(k) appeared in the Si/NiFe/Ru/FeCoB multilayered configuration with the thicker FeCoB layer. Since Ru crystallites in a multiunderlayer configuration exhibited no directional alignment, the surface structure of underlayer should be no main reason for the directional alignment of FeCo crystallites deposited on it. The dependence of hickness of FeCoB layer in Si/NiFe/Ru/FeCoB film on H(k) indicated that the in-plane magnetic anisotropy is caused by not only the structure of Ru underlayer but also oblique incidence effect of sputtered particles, which is attained in configuration of Facing Targets Sputtering (FTS) system. From these experimental results, remarkably high H(k) of 540 Oe was obtained.

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Effect of thickness on structure, microstructure, residual stress and soft magnetic properties of DC sputtered Fe65Co35 soft magnetic thin films

Kumari

Raja

Kumar

et al. 2014

Journal of Magnetism and Magnetic Materials

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Crystal Structure as an Origin of High-Anisotropy Field of FeCoB Films With Ru Underlayer

Cited by 33 publications

References 7 publications

FeCoB Films with Large Saturation Magnetization and High Magnetic Anisotropy Field to Attain High Ferromagnetic Resonance Frequency

FeCoB Films with Large Saturation Magnetization and High Magnetic Anisotropy Field to Attain High Ferromagnetic Resonance Frequency

Directional Alignment of FeCo Crystallites in Si/NiFe/Ru/FeCoB Multilayer with High Anisotropy Field Above 500 Oe

Effect of thickness on structure, microstructure, residual stress and soft magnetic properties of DC sputtered Fe65Co35 soft magnetic thin films

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