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An algorithm to extract effective magnetic parameters of thin film with in-plane uniaxial magnetic anisotropy J. Appl. Phys. 107, 09C507 (2010); 10.1063/1.3357325 Direct observation of an anisotropic in-plane residual stress induced by B addition as an origin of high magnetic anisotropy field of Ru/FeCoB film J. Appl. Phys. 107, 09A323 (2010); 10.1063/1.3350899Ru/FeCoB crystalline soft magnetic underlayers with high anisotropy field for CoPtCr -SiO 2 granular perpendicular magnetic recording media FeCoB layers prepared on Ru underlayer possess a high saturation magnetization M s and a high in-plane magnetic anisotropy filed H k . Effects of preparation conditions were investigated. Low Ar gas pressure condition and thicker film thickness were effective to attain distortion of FeCo crystallite. As the crystallinity of Ru underlayer became higher, higher H k was induced. The accumulation of anisotropic stress in the film caused by the oblique incidences of depositing atoms with high energy seems to be one of the important effects to attain high anisotropy field. It was succeeded to prepare the Ru/FeCoB film with high H k of 500 Oe.

FeCoB thin films with a high magnetic anisotropy field Hk were studied. Crystal structure of the FeCo was investigated by using x-Ray diffraction with particular interest for understanding the scheme to produce a high Hk in the FeCoB films. The as-deposited film with a high Hk of 280Oe showed a well-crystallized bcc (110) texture of FeCo and an asymmetric profile in the rocking curve measured along the easy axis. The pole figure profile revealed that the maximum diffraction intensity was observed at the point other than the original point, namely, the tilted crystal orientation to the substrate plane. In addition, elliptical contour lines of diffraction intensity were observed and their major axis aligned with the direction of the peak shift. These results indicated the correlation among the crystal orientation and the easy axis direction and also the incident direction of the sputtering particles to the substrate.

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