Crystal structure of magnesium ditelluride

Yanagisawa, Saburô; Tashiro, M.; Anzai, S.

doi:10.1016/0022-1902(69)80141-7

Cited by 30 publications

(8 citation statements)

References 7 publications

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“…These positions are similar to the theoretically calculated ones for semiconducting SWCNTs with a diameter of 1.3-1.5 nm [53][54][55]. The possible chiralities of exciting nanotubes are (19,0), (18,1), (17,3), (16,5), (12,10) for 1.5-nm SWCNTs; (17,1), (16,3), (14,6), (12,8), (11,9) for 1.4-nm SWCNTs, and (17,0), (16,2), (13,6), (12,7), (10,9) for 1.34-nm SWCNTs [40,41]. The shifts of peak positions in comparison to ones of the pristine SWCNTs are given in the parentheses.…”

Section: Figures 3a and B Demonstrate The Rbm-and G-bands Ofsupporting

confidence: 75%

“…These positions are similar to the theoretically calculated ones for metallic nanotubes with a diameter of 1.4 nm [53][54][55]. The possible chiralities of exciting nanotubes are (20,1), (19,3), (17,4), (16,6), (15,8), (14,10) for 1.5-nm SWCNTs and (18,0), (17,2), (16,4), (13,7), (14,5), (10,10) for 1.4-nm SWCNTs [40,41].…”

Section: Figures 3a and B Demonstrate The Rbm-and G-bands Ofsupporting

confidence: 75%

“…Metal chalcogenides have been studied since 1960-1970s [6][7][8][9]. The objects of investigations were their optical, electrical properties and structure.…”

Section: Introductionmentioning

confidence: 99%

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Comparative analysis of electronic properties of tin, gallium, and bismuth chalcogenide-filled single-walled carbon nanotubes

Kharlamova

2014

J Mater Sci

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In the present work, the channels of singlewalled carbon nanotubes (SWCNTs) were filled with tin sulfide (SnS), gallium telluride (GaTe), and bismuth selenide (Bi 2 Se 3 ). The successful encapsulation of the compounds was proven by high-resolution transmission electron microscopy. The electronic properties of the filled SWCNTs were studied by optical absorption spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. It was found that the embedded metal chalcogenides have different influence on the electronic properties of the nanotubes. The incorporation of tin sulfide into the SWCNTs does not result in sufficient changes in the electronic structure of SWCNTs, except for a minor influence on metallic nanotubes. The filling of SWCNTs with gallium telluride causes the charge transfer from the SWCNT walls to the encapsulated compound due to acceptor doping of the nanotubes. The insertion of bismuth selenide inside the SWCNT channels does not lead to the modification of the electronic properties of nanotubes.

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Section: Figures 3a and B Demonstrate The Rbm-and G-bands Ofsupporting

confidence: 75%

Section: Figures 3a and B Demonstrate The Rbm-and G-bands Ofsupporting

confidence: 75%

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Comparative analysis of electronic properties of tin, gallium, and bismuth chalcogenide-filled single-walled carbon nanotubes

Kharlamova

2014

J Mater Sci

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“…The distances are longer than in common covalent Te–Te-bonds. For instance, in the case of [Te 2 ] 2– dumbbells, they range between 2.70 Å in MgTe 2 and 2.86 Å in α-K 2 Te 2 , while in the infinite Te-chains in elemental tellurium, d (Te–Te) is 2.83 Å . Nonetheless, the distances are much shorter than twice the van der Waals radius, which is a first indicator for covalent Te–Te interactions within the strands.…”

Section: Resultsmentioning

confidence: 99%

Cu_9.1Te₄Cl₃: A Thermoelectric Compound with Low Thermal and High Electrical Conductivity

et al. 2019

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Cu9.1Te4Cl3 is a new polymorphic compound in the class of coinage metal polytelluride halides. Copper is highly mobile, which results in multiple order–disorder phase transitions in a limited temperature interval from 240 to 370 K. Mainly as a consequence of thermal transport properties, the compound’s thermoelectric figure of merit reaches values up to ZT = 0.15 in the temperature range between room temperature and 523 K. Its structure is closely related to that of Ag10Te4Br3, another coinage metal polytelluride halide, which represents the first p–n–p-switchable semiconductor approachable by a simple temperature change. The title compound outperforms Ag10Te4Br3 in terms of thermoelectric properties by 1 order of magnitude and therefore acts as a link between the class of p–n–p compounds and thermoelectric materials.

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“…At 540 K, the bond length of the [Te 2 ] 2– dumbbell is 2.94 Å and the distance of the coordinating Te 2– anion to the dumbbell is 3.71 Å. The common values for [Te 2 ] 2– dumbbells at room temperature are 2.70 Å in MgTe 2 and 2.86 Å in α-K 2 Te 2 . Ag 10 Te 4 Br 3 contains the same Te 4 structure motif with Te–Te distances of 2.79 and 3.60 Å, respectively, at room temperature .…”

Section: Resultsmentioning

confidence: 98%

Ion Dynamics and Polymorphism in Cu₂₀Te₁₁Cl₃

Vogel

Nilges

2021

Inorg. Chem.

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Coinage metal polychalcogenide halides are an intriguing class of materials, and many representatives are solid ion conductors and thermoelectric materials. The materials show high ion mobility, polymorphism, and various attractive interactions in the cation and anion substructures. Especially the latter feature leads to complex electronic structures and the occurrence of charge-density waves (CDWs) and, as a result, the first p–n–p switching materials. During our systematic investigations for new p–n–n switching materials in the Cu–Te–Cl phase diagram, we were able to isolate polymorphic Cu20Te11Cl3, which we characterized structurally and with regard to its electronic and thermoelectric properties. Cu20Te11Cl3 is trimorphic, with phase transitions occurring at 288 and 450 K. The crystal structures of two polymorphs, the α phase, stable above 450 K, and the β polymorph (288–450 K), are reported, and the complex structure chemistry featuring twinning upon a phase change is illustrated. We identified a dynamic cation substructure and a static anion substructure for all polymorphs, characterizing Cu20Te11Cl3 as a solid Cu-ion conductor. Temperature-dependent measurements of the Seebeck coefficient and total conductivity were performed and substantiated a linear response of the Seebeck coefficient, a lack of CDWs, and no p–n–p switching. Reasons for a lack of CDWs in Cu20Te11Cl3 are discussed and illustrated in the context of existing p–n–p switching materials.

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Crystal structure of magnesium ditelluride

Cited by 30 publications

References 7 publications

Comparative analysis of electronic properties of tin, gallium, and bismuth chalcogenide-filled single-walled carbon nanotubes

Comparative analysis of electronic properties of tin, gallium, and bismuth chalcogenide-filled single-walled carbon nanotubes

Cu_9.1Te₄Cl₃: A Thermoelectric Compound with Low Thermal and High Electrical Conductivity

Ion Dynamics and Polymorphism in Cu₂₀Te₁₁Cl₃

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Crystal structure of magnesium ditelluride

Cited by 30 publications

References 7 publications

Comparative analysis of electronic properties of tin, gallium, and bismuth chalcogenide-filled single-walled carbon nanotubes

Comparative analysis of electronic properties of tin, gallium, and bismuth chalcogenide-filled single-walled carbon nanotubes

Cu9.1Te4Cl3: A Thermoelectric Compound with Low Thermal and High Electrical Conductivity

Ion Dynamics and Polymorphism in Cu20Te11Cl3

Contact Info

Product

Resources

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Cu_9.1Te₄Cl₃: A Thermoelectric Compound with Low Thermal and High Electrical Conductivity

Ion Dynamics and Polymorphism in Cu₂₀Te₁₁Cl₃