Crystal Structure Transfer in Core/Shell Nanowires

Algra, Rienk E.; Hocevar, Moïra; Verheijen, Marcel A.; Zardo, Ilaria; Immink, George; Enckevort, W.J.P. van; Abstreiter, G.; Kouwenhoven, Leo P.; Vlieg, E.; Bakkers, Erik P. A. M.

doi:10.1021/nl200208q

Cited by 98 publications

(119 citation statements)

References 33 publications

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“…The appearance of a Raman band at the low-energy side of the TO mode was previously observed in III-V NWs with WZ inclusions. 23,32,33 The energy position of the TO* peak in our samples is indeed very close to the energy of the TO(L) phonons in GaP, 34 which makes this explanation plausible. Alternatively, additional modes could be activated due to breaking of translational symmetry caused by formation of either planar (e.g., twinning planes and mixed WZ/ZB segments) or point defects that relaxes Raman selection rules.…”

supporting

confidence: 60%

Raman spectroscopy of GaP/GaNP core/shell nanowires

Dobrovolsky

Sukrittanon²,

Kuang

et al. 2014

Applied Physics Letters

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Raman spectroscopy is employed to characterize structural and phonon properties of GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates. According to polarization-dependent measurements performed on single NWs, the dominant Raman modes associated with zone-center optical phonons obey selection rules in a zinc-blende lattice, confirming high crystalline quality of the NWs. Two additional modes at 360 and 397 cm(-1) that are specific to the NW architecture are also detected in resonant Raman spectra and are attributed to defect-activated scattering involving zone-edge transverse optical phonons and surface optical phonons, respectively. It is concluded that the formation of the involved defect states are mainly promoted during the NW growth with a high V/III ratio.

Funding Agencies|Vetenskapsradet (Swedish Research Council) [621-2010-3815]; U.S. National Science Foundation [DMR-0907652, DMR-1106369]; Royal Government of Thailand Scholarship

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supporting

confidence: 60%

Raman spectroscopy of GaP/GaNP core/shell nanowires

Dobrovolsky

Sukrittanon²,

Kuang

et al. 2014

Applied Physics Letters

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Funding Agencies|Vetenskapsradet (Swedish Research Council) [621-2010-3815]; U.S. National Science Foundation [DMR-0907652, DMR-1106369]; Royal Government of Thailand Scholarship

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“…These characteristics are indicative of a disordered QW with pronounced exciton localization which for planar QWs occurs due to local QW thickness fluctuations [34]. In addition to this established and dominant type-I contribution to the QD confinement, further localization can occur in our NW-based QWs due to a transfer of the ZB and WZ crystal phases from the core to the radial shell [35,36]. Thus axial type-II heterostructures could also contribute to the total confinement potential.…”

Section: Sample and Optical Characterizationmentioning

confidence: 82%

Radio frequency occupancy state control of a single nanowire quantum dot

Weiß¹,

Schülein²,

Kinzel³

et al. 2014

J. Phys. D: Appl. Phys.

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Abstract.The excitonic occupancy state of a single, nanowire-based, heterostructure quantum dot is dynamically programmed by a surface acoustic wave. The quantum dot is formed by an interface or thickness fluctuation of a GaAs QW embedded in a AlGaAs shell of a GaAs − AlGaAs core-shell nanowire. As we tune the time at which carriers are photogenerated during the acoustic cycle, we find pronounced intensity oscillations of neutral and negatively charged excitons. At high acoustic power levels these oscillations become anticorrelated which enables direct acoustic programming of the dot's charge configuration, emission intensity and emission wavelength. Numerical simulations confirm that the observed modulations arise from acoustically controlled modulations of the electron and electron-hole-pair concentrations at the position of the quantum dot.

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“…We note that a thin Si shell (o2 nm) forms around the GaP segment during Si growth ( Fig. 2c), which is due to the relatively high temperature of the growth process 17 .…”

Section: Resultsmentioning

confidence: 97%

Growth and optical properties of axial hybrid III–V/silicon nanowires

et al. 2012

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Hybrid silicon nanowires with an integrated light-emitting segment can significantly advance nanoelectronics and nanophotonics. They would combine transport and optical characteristics in a nanoscale device, which can operate in the fundamental single-electron and singlephoton regime. III-V materials, such as direct bandgap gallium arsenide, are excellent candidates for such optical segments. However, interfacing them with silicon during crystal growth is a major challenge, because of the lattice mismatch, different expansion coefficients and the formation of antiphase boundaries. Here we demonstrate a silicon nanowire with an integrated gallium-arsenide segment. We precisely control the catalyst composition and surface chemistry to obtain dislocation-free interfaces. The integration of gallium arsenide of high optical quality with silicon is enabled by short gallium phosphide buffers. We anticipate that such hybrid silicon/III-V nanowires open practical routes for quantum information devices, where for instance electronic and photonic quantum bits are manipulated in a III-V segment and stored in a silicon section.

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Crystal Structure Transfer in Core/Shell Nanowires

Cited by 98 publications

References 33 publications

Raman spectroscopy of GaP/GaNP core/shell nanowires

Raman spectroscopy of GaP/GaNP core/shell nanowires

Radio frequency occupancy state control of a single nanowire quantum dot

Growth and optical properties of axial hybrid III–V/silicon nanowires

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