Raman spectroscopy of GaP/GaNP core/shell nanowires

Dobrovolsky, Alexander; Sukrittanon, S.; Kuang, Y. J.; Tu, C. W.; Chen, Weimin; Buyanova, Irina

doi:10.1063/1.4901446

Cited by 22 publications

(12 citation statements)

References 40 publications

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“…Both the core and shell layers were found to be single crystalline and to have predominantly zinc‐blende structure with inclusions of twinning planes. Their high crystalline quality was independently confirmed by the performed Raman measurements . The nitrogen content in the optically active GaNP shell layers was about 0.6%–0.9% and was determined by employing the so‐called band anticrossing model, which establishes one‐to‐one correspondence between the nitrogen composition and the bandgap energy of GaNP.…”

Section: Resultsmentioning

confidence: 84%

“…Their high crystalline quality was independently confi rmed by the performed Raman measurements. [ 32 ] The nitrogen content in the optically active GaNP shell layers was about 0.6%-0.9% and was determined by employing the so-called band anticrossing model, [ 22,23,31,33 ] which establishes one-to-one correspondence between the nitrogen composition and the bandgap energy of GaNP. A representative scanning electron microscopy (SEM) image of the studied free-standing GaP/GaNP NWs is shown in Figure 1 a.…”

Section: Resultsmentioning

confidence: 99%

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Fabry–Perot Microcavity Modes in Single GaP/GaNP Core/Shell Nanowires

Dobrovolsky

Stehr

Sukrittanon³

et al. 2015

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Semiconductor nanowires (NWs) are attracting increasing interest as nanobuilding blocks for optoelectronics and photonics. A novel material system that is highly suitable for these applications are GaNP NWs. In this article, we show that individual GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates can act as Fabry-Perot (FP) microcavities. This conclusion is based on results of microphotoluminescence (μ-PL) measurements performed on individual NWs, which reveal periodic undulations of the PL intensity that follow an expected pattern of FP cavity modes. The cavity is concluded to be formed along the NW axis with the end facets acting as reflecting mirrors. The formation of the FP modes is shown to be facilitated by an increasing index contrast with the surrounding media. Spectral dependence of the group refractive index is also determined for the studied NWs. The observation of the FP microcavity modes in the GaP/GaNP core/shell NWs can be considered as a first step toward achieving lasing in this quasidirect bandgap semiconductor in the NW geometry.

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Section: Resultsmentioning

confidence: 84%

Section: Resultsmentioning

confidence: 99%

Fabry–Perot Microcavity Modes in Single GaP/GaNP Core/Shell Nanowires

Dobrovolsky

Stehr

Sukrittanon³

et al. 2015

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“…Commonly metalorganic vapor-phase epitaxy (MOVPE) and gas-source molecular beam epitaxy (GS-MBE) [ 43 , 44 ] techniques are used for the GaPN NWs growth. MOVPE is scalable and allows effective suppression of a parasitic two-dimensional layer formation.…”

Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane

et al. 2020

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Controlled growth of heterostructured nanowires and mechanisms of their formation have been actively studied during the last decades due to perspectives of their implementation. Here, we report on the self-catalyzed growth of axially heterostructured GaPN/GaP nanowires on Si(111) by plasma-assisted molecular beam epitaxy. Nanowire composition and structural properties were examined by means of Raman microspectroscopy and transmission electron microscopy. To study the optical properties of the synthesized nanoheterostructures, the nanowire array was embedded into the silicone rubber membrane and further released from the growth substrate. The reported approach allows us to study the nanowire optical properties avoiding the response from the parasitically grown island layer. Photoluminescence and Raman studies reveal different nitrogen content in nanowires and parasitic island layer. The effect is discussed in terms of the difference in vapor solid and vapor liquid solid growth mechanisms. Photoluminescence studies at low temperature (5K) demonstrate the transition to the quasi-direct gap in the nanowires typical for diluted nitrides with low N-content. The bright room temperature photoluminescent response demonstrates the potential application of nanowire/polymer matrix in flexible optoelectronic devices.

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“…At low UDMH:TBP ratios (0.1 and 0.3), surface optical (SO) phonons at 397 cm −1 are observable [55–57]. This surface activated phonon mode can arise from diameter modulation [55], rough surfaces [56], and/or structural defects [57]. With increasing UDMH ratios, the SO mode either vanishes or gets superimposed by a mode referred to as X (sometimes denoted as LO X ).…”

Section: Resultsmentioning

confidence: 99%

Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH

Steidl

Peh

et al. 2018

Nanoscale Res Lett

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III–V nanowires (NWs) possess great potential for use in future semiconductor technology. Alloying with dilute amounts of nitrogen provides further flexibility in tuning their material properties. In this study, we report on successful in situ nitrogen incorporation into GaP(N) NWs during growth via the Au-catalyzed vapor-liquid-solid (VLS) mechanism. The impact of the nitrogen precursur unsymmetrical dimethyl hydrazine (UDMH) on morphology was found to be overall beneficial as it strongly reduces tapering. Analysis of the crystal structure of NWs with and without N reveals zinc blende structure with an intermediate amount of stacking faults (SF). Interestingly, N incorporation leads to segments completely free of SFs, which are related to dislocations transverse to the growth direction.

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Raman spectroscopy of GaP/GaNP core/shell nanowires

Cited by 22 publications

References 40 publications

Fabry–Perot Microcavity Modes in Single GaP/GaNP Core/Shell Nanowires

Fabry–Perot Microcavity Modes in Single GaP/GaNP Core/Shell Nanowires

Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane

Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMH

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