Crystalline Quality of CdSe Single Crystalline Commercial Wafer

CdSe is II-VI semiconductor with compact hexagonal structure. It has a band gap of 1.82 eV and a high stopping power for nuclear radiation. Single crystalline CdSe ingots were grown by Physical Vapor Transport (PVT) employing a horizontal reactor. As devices critically depend on material properties its single crystalline quality was determined by chemical etching and transmission electron microscopy. Results were compared to those corresponding to Bridgman High Pressure (HPB) grown material and also to PVT material grown in a vertical reactor.

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Crystalline Quality of CdSe Single Crystalline Commercial Wafer

Cited by 2 publications

References 7 publications

MBE growth of high quality HgCdSe on GaSb substrates

MBE growth of high quality HgCdSe on GaSb substrates

Structural quality in single crystalline CdSe ingots grown by PVT

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