Crystallinity and electrical properties of tin-doped indium oxide films deposited by DC magnetron sputtering

Structural Studies of Tin-Doped Indium Oxide (ITO) and In4Sn3O12

“…In contrast, Parent et al (5) showed by X-ray absorption spectroscopy on ITO films prepared by a pyrolysis technique that the presence of tin disorganizes the host network and relaxes the oxygen environment toward a configuration which is similar to that of rhomboedral In O (for indium cations) and SnO (for tin cations). Shigesato et al (7) showed that tin can segregate close to the film surface or along grain boundaries to form an insulating phase.…”

Low-temperature preparation of ITO films by dual ion beam sputtering

“…Some of the In in In 2 O 3 was replaced by Sn, which slightly increased the lattice constant. Shigesato et al [9] prepared ITO crystal powder by sintering a mixture of 10 wt% SnO 2 and In 2 O 3 powders at a temperature of 1500 °C for 1 h and calculated the lattice constant using the X-ray diffraction method. It was reported that the lattice constant increased by 0.18%.…”

Effects of Substrate Temperature on Properties of Tin-Doped Indium Oxide Films Deposited by Activated Electron Beam Evaporation

“…It was also confirmed that the carrier concentration in the sputtered film increases with increasing film thickness. 6) This suggests that a trap for the crystalline defects of the carrier concentration of dopants (Sn or O vacancies) decreases because the crystallinity is improved.…”