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Indium-tin oxide (ITO) films and amorphous WO3 (a-WO3) films were deposited by DC magnetron sputtering and EB evaporation, respectively, under different water partial pressures (p H2O). The ITO films sputtered under higher p H2O showed higher resistivities because of the decrease in hall mobility and had rather different orientation distributions of the crystal axis of the grains. It was found from XPS analyses that the In-O-H bonds which were not found in the films existed at the interface between the glass substrates and the ITO films, and much more of these bonds existed for the higher p H2O films. This suggests that the structural change which increased the resistivity occurred at the first stages of the formation of the films. For the a-WO3 films deposited under high p H2O, the decreases of order parameters and increases of W=O bonds were observed by Raman spectroscopy, indicating a decrease in microcrystal sizes.

Tin-doped indium oxide (ITO) films were deposited by sputtering of sintered oxide targets, employing an electron cyclotron resonance (ECR) microwave plasma system. The effects of Ar ion bombardment on crystallographic and electrical properties of the films were investigated with control of the ion energy by submagnetic field application. It was found that ion bombardment with energies lower than ∼ 40 eV enhances crystallization whereas bombardment with higher energies suppresses crystallization. The surface roughness of the film was below 50 Å. The smooth surface formation could be attributed to the microstructural modification arising from ion bombardment.

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