Crystallization and ferroelectric properties of Ge4Sb1Te5 films

Santos, R. Ruiz; Prokhorov, E.; Beltrán, Francisco; Trápaga, G.; González‐Hernández, J.

doi:10.1016/j.jnoncrysol.2010.05.077

Cited by 6 publications

(1 citation statement)

References 23 publications

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“…Phase change memory (PCM) is a data storage technology that relies on the thermally induced phase transition between the amorphous and crystalline states in a small volume of the material in solid-state devices. , It combines the high access speed of DRAM with the nonvolatile advantages of flash memory. Chalcogenides such as Ge–Sb–Te-based compounds are typical materials in rewritable optical media and in nonvolatile electronic memory devices, − with Ge 2 Sb 2 Te 5 (GST) being one of the most widely used compositions. However, the phase-change speed of GST is relatively low, and its thermal stability, especially amorphous stability, is unsatisfactory. , Superlattice-like (SLL) PCM materials have attracted much attention in recent years because of better thermal stability and rapid crystallization speed because of their modulated multilayer structure.…”

Section: Introductionmentioning

confidence: 99%

Phase Evolution and Amorphous Stability upon Solid-State Reaction in Superlattice-Like Ge–Sb–Te Combinatorial Thin Films

Hui

Luo

et al. 2020

ACS Appl. Electron. Mater.

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In this paper, the superlattice-like (SLL) Ge−Sb−Te combinatorial thin films were prepared by using a high-throughput ion beam sputtering system. The phase evolution and amorphous stability of such films undergoing heat treatment as a function of the coating sequence and modulation period were systematically studied. The composition structure diagram was constructed via an automated process of data obtained by high-throughput synchrotron micro-X-ray diffraction and lab-based micro-X-ray fluorescence. The element distribution and microstructure in the depth direction of the SLL thin films were characterized with time-of-flight secondary ion mass spectrometry and transmission electron microscopy, respectively. These studies showed that the coating sequence has a significant effect on the element distribution in the as-deposited SLL thin films and the structure of the final product upon solid-state reaction. Reducing the modulation period of the SLL thin film improves the stability of the amorphous Ge−Sb−Te phase. This work lays a solid foundation for the rational design of SLL Ge−Sb−Te thin films to improve their performance.

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Section: Introductionmentioning

confidence: 99%

Phase Evolution and Amorphous Stability upon Solid-State Reaction in Superlattice-Like Ge–Sb–Te Combinatorial Thin Films

Hui

Luo

et al. 2020

ACS Appl. Electron. Mater.

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Effects of Sn Substitution on Thermoelectric Properties of Ge4SbTe5

Williams

Mather

Morelli

2015

Journal of Elec Materi

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Periodic cycle number modulating effect on crystallization temperature in superlattice-like [Ge/Ge8Sb92]n phase-change films and exploration of mechanism

Liu

Lai

2017

AIP Advances

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Superlattice-like (SLL) phase-change films provide more controllable parameters for the optimization of the performance of phase-change films, including the thickness of each constituent layer, the thickness ratio of two constituent layers and cycle number of periodicity. The effects of the first two parameters on the performance of SLL films have been studied widely. However, the influence of last parameter, cycle number of periodicity, was studied sparsely. In this study, we have studied the period number effect on crystallization temperature of SLL [Ge/Ge8Sb92]n films, and designed and fabricated a series of superlattice-like (SLL) [Ge/Ge8Sb92]n phase-change films. Their crystallization behaviors are studied by the measurement of temperature-dependent sheet resistance. We find that crystallization temperature decreases with increasing cycle number of periodicity, revealing period-cycle-number modulation effect. However, such the effect cannot be explained by current interface effect model. We test the existence of periodic structures of the crystallized SLL films by coherent acoustic phonon (CAP) spectroscopy. Apparent folded CAP modes related to SLL nanostructures are observed, implying the existence of excellent periodic structures or no alloying within one period in crystallized SLL films. Therefore, such period number manipulation effect cannot be explained by the cooperative effects of interface and alloying effects either, implying new mechanisms to be unveiled. We tentatively propose two kinds of possible long-range effects, built-in electric field and strain effects. Based on strain effect, our results can be explained phenomenologically.

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Crystallization and ferroelectric properties of Ge4Sb1Te5 films

Cited by 6 publications

References 23 publications

Phase Evolution and Amorphous Stability upon Solid-State Reaction in Superlattice-Like Ge–Sb–Te Combinatorial Thin Films

Phase Evolution and Amorphous Stability upon Solid-State Reaction in Superlattice-Like Ge–Sb–Te Combinatorial Thin Films

Effects of Sn Substitution on Thermoelectric Properties of Ge4SbTe5

Periodic cycle number modulating effect on crystallization temperature in superlattice-like [Ge/Ge8Sb92]n phase-change films and exploration of mechanism

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