Crystallization of Zirconium-Rich PLZT Thin Films Below 500°C

Mandeljc, Mira; Malič, Barbara; Kosec, Marija; Dražić, Goran

doi:10.1080/10584580215389

Cited by 9 publications

(6 citation statements)

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“…Several groups have attempted to decrease the temperature of perovskite crystallization by increasing the level of cation homogeneity in the gel stage and/or by promoting nucleation through the use of seeds. The most successful of these are the Kosec and Calzada groups, both of which have managed to achieve perovskite crystallization and excellent electrical response in CSD PbTiO 3 and/or PZT films at or below 500°C 130,143–145 …”

Section: Integration Of High‐capacitance Density Dielectric Filmmentioning

confidence: 99%

Processing Technologies for High‐Permittivity Thin Films in Capacitor Applications

Brennecka

Ihlefeld

Maria

et al. 2010

Journal of the American Ceramic Society

112

102

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Capacitor technologies are as varied as the applications that they enable, but one of the common themes in advanced capacitors for consumer electronics is a desire for increased capacitance in smaller areas/volumes. The heroic advances of discrete capacitor manufacturers have kept pace with the increasing demands of miniaturization, but a time is quickly approaching when it appears that powder‐based fabrication techniques simply will not be able to achieve desired layer thicknesses and capacitance densities. Here, we review the current state of the art and recent advances in the processing science and technology of high‐permittivity thin films with a focus on industrially scalable solution‐based fabrication processes of perovskite ferroelectric systems that appear to offer the greatest promise for the fabrication of future nanoscale capacitors.

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Section: Integration Of High‐capacitance Density Dielectric Filmmentioning

confidence: 99%

Processing Technologies for High‐Permittivity Thin Films in Capacitor Applications

Brennecka

Ihlefeld

Maria

et al. 2010

Journal of the American Ceramic Society

112

102

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“…[8,9] Since thin films deposited from the vapor phase or a liquid solution do not require the level of solid-state diffusion that powder-based techniques rely upon for chemical mixing and densification, they can be processed at significantly lower temperatures (typically 600-700 8C, [10,11] with some reports near 500 8C [12,13] ), which decrease PbO volatility. Reduced processing temperatures, however, are not sufficient to eliminate the problem of Pb volatility, as evidenced by the presence of a low-permittivity Pb-deficient fluorite phase on the top surface of films after crystallization.…”

mentioning

confidence: 98%

Reversibility of the Perovskite‐to‐Fluorite Phase Transformation in Lead‐Based Thin and Ultrathin Films

et al. 2008

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Lead-based perovskite materials currently form the basis of an approximately $5 billion/year market because of their outstanding ferroelectric and electromechanical properties. The volatility of the Pb cation at the elevated temperatures required for material fabrication and phase development has always created difficulties, because even slight deviations from the proper stoichiometry lead to the formation of a non-ferroelectric (and property-destroying) fluorite phase. As researchers strive to integrate these materials into nanometer-scale devices, they are finding that the traditional methods of Pb stoichiometry control are no longer effective owing to increased surface/volume ratio and enhanced interactions with commonly used Pt electrodes.[1] We demonstrate a novel approach for the fabrication of lead zirconate titanate (PZT)-based thin and ultrathin films that exploits the previously unreported reversibility of a phase transformation between the stoichiometric ferroelectric perovskite and the Pb-deficient non-ferroelectric fluorite to produce single-phase materials with excellent electrical properties while minimizing chemical heterogeneities within the film and interactions with the electrode. Recent work has demonstrated that ferroelectric behavior may persist at length scales below 10 nm, [2][3][4][5] and under certain conditions, perhaps all the way to the unit cell level. [6,7] While these studies suggest the possibility of integrated ferroelectricbased nanodevices, they have so far dealt with model systems using lattice-matched substrates and electrodes onto which epitaxial films were deposited. Because of their high remanent polarization and outstanding electromechanical properties, complex Pb-based materials such as PZT are well-suited for applications including ferroelectric non-volatile memory (FERAM), actuators for micro-/nanoelectromechanical systems (MEMS/NEMS), and piezoelectric energy harvesting.

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“…The formation of secondary pyrochlore phases, or fluorite phases, is a typical problem in complex Pb-based thin films (PZT or PLZT). Among the different approaches in the literature, the suppression of the pyrochlore phases can be obtained most commonly by reducing the processing temperatures to minimize the PbO volatility [19] or by introducing a PbO excess in the precursor solution to control the Pb stoichiometry in the final film [20]. pyrochlore phase, while at lower pyrolysis temperature the pyrochlore phase can transform into the perovskite phase [11].…”

Section: Resultsmentioning

confidence: 99%

Processing and structural properties of random oriented lead lanthanum zirconate titanate thin films

Araújo

Nahime

Melo

et al. 2015

Materials Research Bulletin

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Polycrystalline lead lanthanum zirconate titanate (PLZT) thin films have been prepared by a polymeric chemical route to understand the mechanisms of phase transformations and map the microstructure and elastic properties at the nanoscale in these films. X-ray diffraction, atomic force microscopy (AFM) and ultrasonic force microscopy (UFM) have been used as investigative tools. On one side, PLZT films with mixed-phase show that the pyrochlore phase crystallizes predominantly in the bottom film-electrode interface while a pure perovskite phase crystallizes in top film surface. On the contrary, pyrochlore-free PLZT films show a non-uniform microstrain and crystallite size along the film thickness with a heterogeneous complex grainy structure leading to different elastic properties at nanoscale

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Crystallization of Zirconium-Rich PLZT Thin Films Below 500°C

Cited by 9 publications

References 0 publications

Processing Technologies for High‐Permittivity Thin Films in Capacitor Applications

Processing Technologies for High‐Permittivity Thin Films in Capacitor Applications

Reversibility of the Perovskite‐to‐Fluorite Phase Transformation in Lead‐Based Thin and Ultrathin Films

Processing and structural properties of random oriented lead lanthanum zirconate titanate thin films

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