Cu-doped ZnO-based p–n hetero-junction light emitting diode

Kim, J. B.; Byun, Dongjin; Ie, Sangyub; Park, D. H.; Choi, Won‐Kook; Choi, Ji Won; Angadi, Basavaraj

doi:10.1088/0268-1242/23/9/095004

Cited by 78 publications

(46 citation statements)

References 35 publications

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“…As one of the most important binary TMO at present, ZnO has wide applications in electronics, optics, optoelectronics, spintronics and energy generators, which can be achieved through band gap engineering, dopant incorporation, defect engineering, or heterostructure engineering [4,5]. For the doped ZnO compounds, copper-doped ZnO (ZnO:Cu) has captured considerable attention in magnetic semiconductors [6], light emitting diodes [7], surface acoustic wave [8], and optical switching [9,10] applications. Cu ions are well known as electron traps in ZnO films and they can increase the resistivity of ZnO from semiconducting to insulating-like properties [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Effect of incorporating copper on resistive switching properties of ZnO films

Jia

Dong

Zhang

2012

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Effect of incorporating copper on resistive switching properties of ZnO films

Jia

Dong

Zhang

2012

Journal of Alloys and Compounds

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“…p-type ZnO is achievable but difficult to control and stabilize over time. Examples include p-i-n homojunctions, 50 p-n homojunction light emitting diodes, 51 and p-Cu:ZnO/n-6 H:SiC p-n heterojunctions, 52 each of which emit light with electric current. Very recently, Liu et al have demonstrated lasing within ZnO nanorods.…”

Section: Defect Roles In Achieving Controlled Dopingmentioning

confidence: 99%

Interplay of native point defects with ZnO Schottky barriers and doping

Brillson¹,

Dong²,

Tuomisto³

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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A combination of depth-resolved electronic and structural techniques reveals that native point defects can play a major role in ZnO Schottky barrier formation and charged carrier doping. Previous work ignored these lattice defects at metal-ZnO interfaces due to relatively low point defect densities in the bulk. At higher densities, however, they may account for the wide range of Schottky barrier results in the literature. Similarly, efforts to control doping type and density usually treat native defects as passive, compensating donors or acceptors. Recent advances provide a deeper understanding of the interplay between native point defects and electronic properties at ZnO surfaces, interfaces, and epitaxial films. Key to ZnO Schottky barrier formation is a massive redistribution of native point defects near its surfaces and interfaces. It is now possible to measure the energies, densities, and in many cases the type of point defects below the semiconductor-free surface and its metal interface with nanoscale precision. Depth-resolved cathodoluminescence spectroscopy of deep level emissions calibrated with electrical techniques show that native point defects can (1) increase by orders of magnitude in densities within tens of nanometers of the semiconductor surface, (2) alter free carrier concentrations and band profiles within the surface space charge region, (3) dominate Schottky barrier formation for metal contacts to ZnO, and (4) play an active role in semiconductor doping. The authors address these issues by clearly identifying transition energies of leading native point defects and defect complexes in ZnO and the effects of different annealing methods on their spatial distributions on a nanoscale. These results reveal the interplay between ZnO electronic defects, dopants, polarity, and surface nanostructure, highlighting new ways to control ZnO Schottky barriers and doping.

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“…It is possible that Cu atoms can replace either substitutional or interstitial Zn atoms in the ZnO lattice creating structural deformations. 4,5 Cu significantly affects the electrical, chemical, structural and optical properties of ZnO, and the study of the electronic state of Cu in ZnO has been the subject of interest for a long time. [6][7][8][9] Various techniques for the preparation of ZnO films have been used such as electrochemical deposition, 10 19 screen printing, 20 etc.…”

Section: Introductionmentioning

confidence: 99%

Investigation on the structural and optical properties of Zn1-xCuxO (x=0, 0.05, 0.1) sintered thick films for optoelectronic device applications

Chackrabarti¹,

Bhat²,

Bhat³

et al. 2017

ECB

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The pure and copper doped zinc oxide Zn1-xCuxO (x=0,0.05,0.1) thick films were deposited on glass substrates by screen printing method from their nano powders, followed by sintering at 500 0 C to obtain desired stoichiometry and better adherence of films. The structural and optical properties of the samples were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM) with UV-visible spectroscopy and Raman spectroscopy. XRD patterns confirmed hexagonal wurtzite structure with minor detection of Cu and SEM micrographs revealed granular grains and porosity in films. The optical properties and the energy band gap of pure and Cu 2+ ions doped ZnO films were studied by UV-visible absorbance spectroscopy. As the doping concentration is increased, both the absorption edge and the reflectance edge is found to shift towards higher wavelengths (red shift) and the direct band gap decreased from 3.4 to 3.3 eV. The incorporation of copper in ZnO lattice is confirmed by Raman spectrum. The E2 (high) phonon and multiphoton modes are observed at 441 and 1132 cm -1 respectively in Raman spectra. *Corresponding Authors

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Cu-doped ZnO-based p–n hetero-junction light emitting diode

Cited by 78 publications

References 35 publications

Effect of incorporating copper on resistive switching properties of ZnO films

Effect of incorporating copper on resistive switching properties of ZnO films

Interplay of native point defects with ZnO Schottky barriers and doping

Investigation on the structural and optical properties of Zn1-xCuxO (x=0, 0.05, 0.1) sintered thick films for optoelectronic device applications

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