Cubic GaN layers grown by metalorganic chemical vapor deposition on GaN templates obtained by nitridation of GaAs

Electrical behavior of Mg doped cubic GaN on c-GaN structure

“…This work complements the research reported previously [5,13], Mg doped c-GaN films were grown on free standing c-GaN templates to study the optical and electrical properties of p-type doped films. In addition, we analyzed the electrical behavior of c-GaN p-n homojunctions in order to demonstrate the feasibility of a freestanding c-GaN device with our synthesis method; we observe repeatable NDR effects in the devices and propose a possible explanation.…”

“…Description of the low pressure metalorganic chemical vapor deposition reactor (LPMOCVD) used in the Mg doped c-GaN films as well as details on how to synthesize n-type conductivity c-GaN films on substrates obtained by nitridation of GaAs surface was described earlier [5]. We used biscyclopentadienyl magnesium (Cp 2 Mg) as magnesium source, trimethyl gallium (TMG) as gallium source, ammonia (NH 3 ) as nitrogen source and purified hydrogen as carrier gas.…”

“…Despite this, there are reports about growth of c-GaN film with high crystalline quality, for example in 2008, Novikov et al [4] reported the synthesis of c-GaN layers and substrates by molecular beam epitaxy technique (MBE), the cGaN substrates obtained had thicknesses up to 100 μm with high crystalline quality. And in 2012, we reported the synthesis of free standing c-GaN monocrystalline template obtained by the nitridation process of the GaAs surface [5].…”

Investigations of in situ reflectance of GaN layers grown by MOVPE on GaAs (0 0 1)

“…to study the GaN epitaxy on GaAs substrate is to obtain pure zinc blende GaN [24][25][26]. In order to achieve smooth and flat GaN surface and GaN/GaAs interface, several growth processes must be adequately controlled [27].…”

As4 overpressure effects on the phase purity of cubic GaN layers grown on GaAs substrates by RF-MBE

“…: +1 00525536650130. strong piezoelectric fields [4]. Besides, the cubic phase presents a high mobility of carriers, the ease to get p-type doping and, more suitable cleaving planes [5][6][7].…”