CuO/ZnO memristors via oxygen or metal migration controlled by electrodes

Huang, Yong; Shen, Zihan; Wu, Ye; Xie, Meiqiu; Hu, Yanqiang; Zhang, Shufang; Shi, Xiaoqing; Zeng, Haibo

doi:10.1063/1.4942477

Cited by 14 publications

(10 citation statements)

References 14 publications

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“…The RS with the Ag TE is recognized by the process of migration of metal-cations and electrochemical metallization. Thus, it confirmed the notion that CF's operational nature affects several characteristics of the device's functional dynamics [184]. Fig.…”

Section: Multi-layered Zno Based Rramsupporting

confidence: 80%

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ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

et al. 2021

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Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use of doping elements, multi-layered structures, suitable bottom and top electrodes, controlling the deposition materials, and the impact of hybrid structure for enhancing the switching dynamics are discussed. The potentials of ZnO-based RRAM for invisible and bendable devices are also covered. ZnO-based RRAM has the potential for possible application in bio-inspired cognitive computational systems. Thus, the synapse capability of ZnO is presented. The sneak-path current issue also besets ZnO-based RRAM crossbar array architecture. Hence, various attempts to subdue the bottleneck have been shown and discussed in this article. Interestingly, ZnO provides not only helpful memory features. However, it demonstrates the ability to be used in nonvolatile multifunctional memory devices. Also, this review covers various issues like the effect of electrodes, interfacial layers, proper switching layers, appropriate fabrication techniques, and proper annealing settings. These may offer a valuable understanding of the study and development of ZnO-based RRAM and should be an avenue for overcoming RRAM challenges.

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Section: Multi-layered Zno Based Rramsupporting

confidence: 80%

“…Fig. 14 shows the statistical analysis and current-voltage (IV) curves of Ag/CuO/ZnO/Pt (ACZP) and Pt/CuO/ZnO/Pt (PCZP) structures [184]. The IV curves of PCZP shown in Fig.…”

Section: Multi-layered Zno Based Rrammentioning

confidence: 99%

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

et al. 2021

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“…With respect to that, the fitted two straight lines for the LZO-5 device are shown in Figure 10 c, with the slopes of 0.8 and 1.0 at HRS and LRS, respectively. It indicates that the fitting result at HRS conforms with the Schottky emission mechanism (Ln I ∝ V 1/2 ) [ 27 , 28 ], where the direction of the applied electric field is consistent with the direction of the built-in electric field. When increasing the voltage up to 0.4 V, it was found that a nearly vertical current jump can be observed, proving the formation of conductive filaments in the device.…”

Section: Resultsmentioning

confidence: 63%

Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory

et al. 2020

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In this study, a Pt/Ag/LZO/Pt resistive random access memory (RRAM), doped by different Li-doping concentrations was designed and fabricated by using a magnetron sputtering method. To determine how the Li-doping concentration affects the crystal lattice structure in the composite ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. The resistive switching behaviors of the resulting Pt/Ag/LZO/Pt devices, with different Li-doping contents, were studied under direct current (DC) and pulse voltages. The experimental results showed that compared with the devices doped with Li-8% and -10%, the ZnO based RRAM device doped by 5% Li-doping presented stable bipolar resistive switching behaviors with DC voltage, including a low switching voltage (<1.0 V), a high endurance (>103 cycles), long retention time (>104 s), and a large resistive switching window. In addition, quick switching between a high-resistance state (HRS) and a low-resistance state (LRS) was achieved at a pulse voltage. To investigate the resistive switching mechanism of the device, a conduction model was installed based on Ag conducting filament transmission. The study of the resulting Pt/Ag/LZO/Pt devices makes it possible to further improve the performance of RRAM devices.

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“…The simulated waveforms of all the RRAMs of Table I, Table III to make the curves reproducible. However, this fitting algorithm couldn't be used to fit RRAMs with t ox as high as 60 nm [23] and as low as 3 nm [24]. To fit those RRAMs, the algorithm or the model itself may need to be significantly enhanced.…”

Section: Fitting Algorithmmentioning

confidence: 99%

A Modeling Methodology for Resistive RAM Based on Stanford-PKU Model With Extended Multilevel Capability

Reuben

Fey

Wenger

2019

IEEE Trans. Nanotechnology

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Modeling of Resistive RAMs (RRAMs) is a herculean task due to its non-linearity. While the exigent need for a model has motivated research groups to formulate realistic models, the diversity in RRAMs' characteristics has created a gap between model developers and model users. This paper bridges the gap by proposing an algorithm by which the parameters of a model are tuned to specific RRAMs. To this end, a physicsbased compact model was chosen due to its flexibility, and the proposed algorithm was used to exactly fit the model to different RRAMs, which differed greatly in their material composition and switching behavior. Further, the model was extended to simulate multiple Low Resistance States (LRS), which is a vital focus of research to increase memory density in RRAMs. The ability of the model to simulate the switching from a high resistance state to multiple LRS was verified by measurements on 1T-1R cells.

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CuO/ZnO memristors via oxygen or metal migration controlled by electrodes

Cited by 14 publications

References 14 publications

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory

A Modeling Methodology for Resistive RAM Based on Stanford-PKU Model With Extended Multilevel Capability

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