Current crowding and misalignment effects as sources of error in contact resistivity measurements—Part I: Computer simulation of conventional CER and CKR structures

Scorzoni, A.; Finetti, M.; Grahn, Kaj J.; Suni, I.; Cappelletti, P.

doi:10.1109/t-ed.1987.22958

Cited by 30 publications

(5 citation statements)

References 14 publications

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“…The uniformly distributed current in the vertical samples leads to a smaller series resistance, whereas the heterogeneous current distribution at the contact=Si interface in the lateral samples can lead to increased effective resistance. 27) The specific contact resistances for both structures are compared in Fig. 5.…”

Section: Series Resistance Extraction and Characterizationmentioning

confidence: 99%

Effect of three-dimensional current distribution on characterizing parasitic resistance of FinFETs

Meng¹,

Lin²,

Chiu³

et al. 2016

Jpn. J. Appl. Phys.

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A thorough analysis of the FinFET resistance and current distribution is presented. By combining multiple conventional and novel measurement techniques, the key components that contribute to the parasitic resistance of FinFETs can be quantified. Through a three-dimensional (3D) FinFET resistance network model, the impact of the FinFET 3D structure on the current distribution and parasitic resistance is analyzed. The heterogeneous current distribution, known as the current crowding effect, is also discussed with possible alleviation methods through 3D simulation.

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Section: Series Resistance Extraction and Characterizationmentioning

confidence: 99%

Effect of three-dimensional current distribution on characterizing parasitic resistance of FinFETs

Meng¹,

Lin²,

Chiu³

et al. 2016

Jpn. J. Appl. Phys.

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“…This assumes that the contact resistance is uniform across the whole contact area which may not always be the case [23]. References [26,27,28,29] give some details that should be considered when designing and using the Kelvin structure for measuring contact resistance.…”

Section: Contact Resistancementioning

confidence: 99%

A Review of Test Structures for Characterising Microelectronic and MEMS Technology

Walton

Smith

2008

Advances in Science and Technology

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“…Corrective factors are available [7], but their validity is restricted to the case (W -w) << W, which is not our case. To solve this problem we evaluated the corrective factors by exploiting a two-dimensional (2D) simulation model [7,8]. This model is derived by a finite-difference discretization, where the regions under and outside the contact are divided into cubic cells, with electrical parameters correlated to the sheet resistance R sh and to the contact resistivity ρ c .…”

Section: The One-dimensional Transmission Line Model Versus the Two-d...mentioning

confidence: 99%

Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data

Moscatelli

Scorzoni²,

Poggi

et al. 2003

MSF

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This paper deals with the electrical characterization of low resistance Al-Ti 70/30 wt.% ohmic contacts to a p-type ion implanted 6H-SiC layer. Transmission Line Model (TLM) structures were realized on the top of mesa islands defined in the ion implanted layer. A metal scheme composed of Al-1%Si(350nm)/Ti(80nm) was deposited by sputtering, photolitography defined and annealed at 1000°C in Ar for 2 min. Contact resistance was measured from in-line TLM structures as a function of the temperature in the range 25-290°C. The TLM data were analyzed by both the usual one-dimensional model and a more realistic 2-dimensional finite difference simulation tool that takes into account the current crowding effect at the contact periphery. Extracted contact resistivity values fall in the low range of data from the literature.

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Current crowding and misalignment effects as sources of error in contact resistivity measurements—Part I: Computer simulation of conventional CER and CKR structures

Cited by 30 publications

References 14 publications

Effect of three-dimensional current distribution on characterizing parasitic resistance of FinFETs

Effect of three-dimensional current distribution on characterizing parasitic resistance of FinFETs

A Review of Test Structures for Characterising Microelectronic and MEMS Technology

Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data

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