Current loss due to recombination in Cu-rich CuInSe2 solar cells

Deprédurand, Valérie; Tanaka, Daisuke; Aida, Yasuhiro; Carlberg, Miriam; Fèvre, N.; Siebentritt, Susanne

doi:10.1063/1.4862181

Cited by 48 publications

(41 citation statements)

References 23 publications

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“…10 The Cu/In ratios measured by energy-dispersive X-ray spectroscopy (EDX) were 0.9 and 1.3 for Cu-poor and Cu-rich absorbers, respectively. After the deposition, a 10% aqueous solution of Potassium Cyanide (KCN) was applied to Cu-rich absorbers for 5 min in order to remove the secondary copper selenide phases followed by a potassium fluoride (KF) surface treatment performed in the MBE system for the sample labelled "Cu-rich þ KF" as described in Ref.…”

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confidence: 99%

Space-charge-limited currents in CIS-based solar cells

Zelenina

Werner

Elanzeery

et al. 2017

Applied Physics Letters

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Non-linear shunts in Cu(In,Ga)Se2 solar cells have been well described mathematically using the model of a space-charge-limited current, but their physical origin remained unclear so far. We study space-charge-limited currents on Cu-rich CuInSe2 (CIS) devices, which represent a very suitable system: the devices always exhibit non-linear shunts with a very pronounced behavior. Here, we demonstrate a fundamental difference in the transport mechanism between the Cu-rich-based device and the conventional Cu-poor one. We discuss the location of a space-charge-limited current by comparing devices containing various component layers with Ohmic contacts. We confirm that Cu-rich CIS and cadmium sulfide layers alone do not create a non-linear shunt. Our experimental results demonstrate that the origin of the non-linear behavior is located at the interface between the absorber and buffer layers. Temperature dependent current-voltage measurements performed on Cu-rich-based CIS devices are discussed in agreement with a space-charge-limited current theory suggesting the model of an insulator with traps.

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confidence: 99%

Space-charge-limited currents in CIS-based solar cells

Zelenina

Werner

Elanzeery

et al. 2017

Applied Physics Letters

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“…Possible is also neutralisation with other defect types that have not been observed in the neutron scattering study, like anion related defects. In Cu-poor Cu(In,Ga)Se 2 thin films the presence of Na is essential to reach sufficient doping levels [6,80,82]. Neutron diffraction studies show that the addition of Na leads to a decrease of In Cu antisite donors [83], which can explain the increase in p-type doping with the addition of Na.…”

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confidence: 99%

Chalcopyrite compound semiconductors for thin film solar cells

Siebentritt

2017

Current Opinion in Green and Sustainable Chemistry

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Chalcopyrite semiconductors are used in thin film solar cells with the highest efficiencies, in particular for flexible solar cells. Recent progress has been made possible by an alkali postdeposition treatment. Other important trends are the development of tandem cells and of ultrathin solar cells. Recent progress has forwarded the understanding of off-stoichiometry and of bulk defects in these materials.

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“…77 While record CISe devices have a Cu-poor final composition, 78 they often include a Cu-rich growth step that is observed to enhance optoelectronic and structural properties. 79 Our group 67 also measured a narrower 112 XRD peak for laser annealed absorbers from Cu-rich precursors when compared to their Cu-poor counterparts. Mooney and Hermann 80 revealed that the extinction coefficient, k, which describes the attenuation of electromagnetic radiation by a material, is dependent on stoichiometry and ranged from 0.15 for Cu-poor to 0.3 for Cu-rich electrodeposited precursors.…”

Section: Annealing Of Co-deposited Cu-in-sementioning

confidence: 99%

Laser processing for thin film chalcogenide photovoltaics: a review and prospectus

et al. 2015

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Abstract. We review prior and on-going works in using laser annealing (LA) techniques in the development of chalcogenide-based [CdTe and CuðIn; GaÞðS; SeÞ 2 ] solar cells. LA can achieve unique processing regimes as the wavelength and pulse duration can be chosen to selectively heat particular layers of a thin film solar cell or even particular regions within a single layer. Pulsed LA, in particular, can achieve non-steady-state conditions that allow for stoichiometry control by preferential evaporation, which has been utilized in CdTe solar cells to create Ohmic back contacts. Pulsed lasers have also been used with CuðIn; GaÞðS; SeÞ 2 to improve device performance by surface-defect annealing as well as bulk deep-defect annealing. Continuouswave LA shows promise for use as a replacement for furnace annealing as it almost instantaneously supplies heat to the absorbing film without wasting time or energy to bring the much thicker substrate to temperature. Optimizing and utilizing such a technology would allow production lines to increase throughput and thus manufacturing capacity. Lasers have also been used to create potentially low-cost chalcogenide thin films from precursors, which is also reviewed. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Current loss due to recombination in Cu-rich CuInSe2 solar cells

Cited by 48 publications

References 23 publications

Space-charge-limited currents in CIS-based solar cells

Space-charge-limited currents in CIS-based solar cells

Chalcopyrite compound semiconductors for thin film solar cells

Laser processing for thin film chalcogenide photovoltaics: a review and prospectus

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