Current-Reuse Transformer-Coupled Oscillators With Output Power Combining for Galvanically Isolated Power Transfer Systems

Spina, Nunzio; Fiore, Vincenzo; Lombardo, P.; Ragonese, Egidio; Palmisano, G.

doi:10.1109/tcsi.2015.2495778

Cited by 22 publications

(11 citation statements)

References 16 publications

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“…Fig. 14 shows the performance of the BER as a function of channel length (10,30,90, and 120 cm) at SNR = −5 dB in both motion and stationary states. Fig.…”

Section: Results and Discussion A Bpf Test And Performance Parmentioning

confidence: 99%

“…Among them, mobile power supply uses battery power supply, which is absolutely independent. Using isolation transformer power supply to power the device can effectively isolate the coupling between the device and the earth ground [30]. In the experiments, the uninterrupted power supply uses the storage battery to boost the voltage to provide power for the equipment, and the energy source is the battery.…”

Section: F Experimental Protocolmentioning

confidence: 99%

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Design of Galvanic Coupling Intra-Body Communication Transceiver Using Direct Sequence Spread Spectrum Technology

et al. 2020

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Intra-body communication (IBC) uses the human body as the transmission medium for electrical signals, and it features the following advantages: low power consumption, strong anti-interference ability, high data security, and broad application scenarios. However, some technical issues still need to be addresses, such as the choice of the best modulation and demodulation scheme in different application scenarios, influence of human activity on IBC performance, variable signal-to-noise ratio (SNR), and influence of transmission distance change on different modulation and demodulation methods. This paper adopts direct sequence spread spectrum (DSSS) communication and phase modulation to realize DSSS-differential phase shift keying (DPSK) and DPSK modulation transmission of baseband data. Moreover, the Costas loop method is employed to achieve reliable symbol recovery. Under the same conditions, in vivo experiments were conducted to compare the performance of DSSS-DPSK and DPSK galvanic coupling IBC transceivers. Notably, these transceivers are affected by the changes in SNR, transmission distance, and human activities. Results show that the bit error rate (BER) of the DPSK scheme is 40 times larger than the DSSS-DPSK scheme in a 30 cm channel length and different SNR experiments. When the BER performance changes from extremely poor (1.40 × 10 −1) to excellent (1.51 × 10 −6), the SNR of DSSS-DPSK scheme only needs to be improved by 16 dB. In contrast, when the BER performance changes from extremely poor (1.54×10 −1) to good (1.65 × 10 −5), the SNR of DPSK scheme needs to be improved by 25 dB. With a SNR of −5 dB, the BER ratios of the DPSK scheme is 7 times larger than the DSSS-DPSK scheme. Also, DSSS-DPSK scheme is more sensitive to changes in motion status than DPSK.

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“…Fig. 14 shows the performance of the BER as a function of channel length (10,30,90, and 120 cm) at SNR = −5 dB in both motion and stationary states. Fig.…”

Section: Results and Discussion A Bpf Test And Performance Parmentioning

confidence: 99%

Section: F Experimental Protocolmentioning

confidence: 99%

Design of Galvanic Coupling Intra-Body Communication Transceiver Using Direct Sequence Spread Spectrum Technology

et al. 2020

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“…An integrated galvanic barrier can be implemented by using silicon dioxide (SiO 2 ), which exhibits a breakdown voltage (BV) of about 1000 V/µm [3], sometimes in combination with silicon nitride (Si 3 N 4 ) and oxynitride (SiON) to further improve its isolation rating [4]. Oxide galvanic isolation has been successfully exploited in recent years for highly integrated isolated data [5][6][7] and power transfer interfaces [8][9][10][11][12] by means of on-chip capacitors or stacked transformers. However, oxide insulation can reliably provide a limited surge capability (typically 5-6 kV), since increasing the oxide thickness produces wafer mechanical stress and second order BV effects.…”

Section: Technologies For Chip-scale Galvanic Isolatorsmentioning

confidence: 99%

“…− − − 730 (1) Low/high side; (2) rms; (3) V DD = 5 V; (4) 1.3/2 GHz; (5) From micrographs in [25,26]; (6) Total area/active area; (7) Die attach film (DAF); (8) FoM 1 = (V SURGE • CMTI• f DMAX )/(t p •I DD_CH ); (9) FoM 2 = (V SURGE • CMTI)/E BIT ; (10) The best comparison is with the die-to-die isolated link reported in [25], which exploits an isolation approach based on planar coupling between side-by-side co-packaged chips, thus achieving almost the same isolation rating of our system. Among the papers in Table 3, it also reports the highest f D and the lowest E BIT , but such a performance is mainly enabled by the adopted 0.18-µm CMOS technology and consequently higher f RF with respect to our work in 0.35-µm CMOS.…”

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confidence: 99%

A CMOS Data Transfer System Based on Planar RF Coupling for Reinforced Galvanic Isolation with 25-kV Surge Voltage and 250-kV/µs CMTI

et al. 2020

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This paper exploits an effective approach to overcome the breakdown limitations of traditional galvanic isolators based on chip-scale isolation barriers, thus achieving a very high isolation rating (i.e., compliant with the reinforced isolation requirements). Such an approach is based on radio frequency (RF) planar coupling between two side-by-side co-packaged chips. Standard packaging along with proper assembling techniques can be profitably used to go beyond 20-kV surge voltage without using expensive or exotic isolation components. As a proof of concept, a bidirectional data transfer system based on RF planar coupling able to withstand an isolation rating as high as 25 kV has been designed in a low-cost standard 0.35-µm CMOS technology. Experimental measurements demonstrated a maximum data rate of 40 Mbit/s using a carrier frequency of about 1 GHz. The adopted approach also guarantees a common mode transient immunity (CMTI) of 250 kV/µs, which is a first-rate performance in view of next generation galvanic isolators for wide-bandgap power semiconductor devices, such as gallium nitride high-electron mobility transistors (GaN HEMTs) and silicon carbide (SiC) MOSFETs.

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“…The most common oscillator topologies for galvanic isolators are the class-D [12] and the complementary cross-coupled, which are chosen according to the availability of active devices in the fabrication technology. Interesting topologies based on coupled oscillators have been reported for isolated power transfer applications to improve the performance of traditional complementary oscillators [13], [14] and for mm-wave quadcore VCOs to reduce the phase noise, while maintaining low voltage swings for reliability [15].…”

Section: Introductionmentioning

confidence: 99%

Capacitive-Coupled Stacked Class-D Oscillators for Galvanic Isolators

Spataro

Ragonese

2023

IEEE Trans. Circuits Syst. II

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This brief presents a novel class-D oscillator topology conceived for galvanically isolated data transfer based on RF planar coupling. In its general implementation, it consists of n capacitively coupled stacked class-D oscillators, each one loaded by a primary transformer winding. Capacitive coupling between the oscillators guarantees robust frequency/phase synchronization. The oscillation voltages are combined at the secondary transformer winding, thus ideally producing the same oscillation amplitude of a class-D topology with a power consumption reduced by a factor of 1/n thanks to the current-reuse configuration. With respect to traditional topologies, capacitive-coupled stacked class-D oscillators also allow standard MOS transistors (i.e., with a low breakdown voltage) to be reliably operated at higher supply voltages. The oscillator advantages have been highlighted in comparison with the traditionally adopted complementary cross-coupled topology within an isolated data link based on RF planar coupling in a 0.18-µm CMOS technology.

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Current-Reuse Transformer-Coupled Oscillators With Output Power Combining for Galvanically Isolated Power Transfer Systems

Cited by 22 publications

References 16 publications

Design of Galvanic Coupling Intra-Body Communication Transceiver Using Direct Sequence Spread Spectrum Technology

Design of Galvanic Coupling Intra-Body Communication Transceiver Using Direct Sequence Spread Spectrum Technology

A CMOS Data Transfer System Based on Planar RF Coupling for Reinforced Galvanic Isolation with 25-kV Surge Voltage and 250-kV/µs CMTI

Capacitive-Coupled Stacked Class-D Oscillators for Galvanic Isolators

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