Current-Voltage Characteristics of Electron-Cyclotron-Resonance Sputter-Deposited SrTiO₃ Thin Films

Abstract

Current-voltage characteristics of SrTiO3 thin films prepared on Pt electrodes by electron-cyclotron-resonance sputtering have been studied. The leakage current characteristics of the films show an ohmiclike conduction for electric field strengths lower than about 1 MV/cm, while the leakage current for higher electric field strengths is limited by Schottky emission. These ohmiclike leakage characteristics in the low-electric-field region show strong dependences on the measurement conditions, namely, the values of voltagestep and measurement delaytime in the conventional stepwise current-voltage ramps. This result is attributed to the absorption current due to the dielectric relaxation phenomena of the SrTiO3 capacitor. The overall current-voltage characteristics can be explained by Schottky emission from the Pt electrode.

Single Layer Polycrystalline ZnO–Al<SUB>2</SUB>O<SUB>3</SUB> Nanocomposite Thin Films: Optical and Electrical Properties

“…12 On the other hand, the frequency dependent electrical properties of the thin film greatly depends on the structural homogeneity and stability of the composite based devices and can highlight the relative contribution of the grain, grain boundary, and the defect states to the total ac response under a given set of experimental condition. [13][14][15] This investigation explains the dielectric properties of the ZnO-Al 2 O 3 nanocomposite thin films with high optical transparency prepared by sol gel technique. In some previous reports 16 17 the role of grain and grain boundary in the electrical properties of undoped ZnO and doped (with Al +3 , Ag +2 ) nanocomposites were studied.…”

The effect of Substrate temperature on physical and electrical properties of DC magnetron sputtered (Ta2O5)0.85(TiO2)0.15films

“…Figure 6 shows the plots of ln(J) versus E 1/2 for positive bias voltages. It is shown that the leakage currents are almost proportional to the electrical field [9]. Schottky emission (SE) occurs at the interface between the (Ta 2 O 5 ) 0.85 (TiO 2 ) 0.15 film and the Al electrode where a Schottky barrier is formed.…”

The temperature dependence of the transient current in ferroelectric Pb(ZrxTi1−x)O3 thin films for memory devices applications

“…The transient curves are polarization type at 100, 120, and 140°C. The transient current at room temperature (V app ϭ3 V) and at high temperatures ͑100-140°C, V app ϭ10 V͒ can be well fitted using a Debye-type relaxation model as shown in: 16,17 J͑t ͒ϭ…”