Curvature enhanced adsorbate coverage mechanism for bottom-up superfilling and bump control in damascene processing

Moffat, Thomas P.; Wheeler, Daniel; Kim, S.-K.; Josell, Daniel

doi:10.1016/j.electacta.2007.03.025

Cited by 143 publications

(122 citation statements)

References 40 publications

(146 reference statements)

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“…Moreover, based on the activation phenomenon of PEGpassivated electrode by SPS, a replacement effect was further added to fully describe the additive behavior. 46 Here we consider all three aspects, and the equation of CA is given by…”

Section: 43mentioning

confidence: 99%

“…Follow the same definition of transition time, t trans2 (1.8 ppm, η) can be obtained from potentiostatic electroplating result reported in Ref. 46 and the calculated result is shown in Figure 2.…”

Section: 43mentioning

confidence: 99%

“…3,46 And it gave the transition time as a function of SPS concentration at given overpotential of −0.23 V, or t trans (c S P S , −0.23V ). Follow the same definition of transition time, t trans2 (1.8 ppm, η) can be obtained from potentiostatic electroplating result reported in Ref.…”

Section: 43mentioning

confidence: 99%

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RETRACTED: Copper Electrodeposition in Through-Silicon Via under Galvanostatic Condition

Luo

Chen

Zhang

et al. 2016

J. Electrochem. Soc.

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We present a tertiary current-distribution model for copper electrodeposition under galvanostatic conditions, with detailed surface chemistry kinetics for the model system of copper electrodeposition. The values of the kinetic parameters are extracted from results of statistical chronoamperometry and linear sweep voltammetry experiments using a potential-dependent, diffusion-adsorptiondesorption model of the experimental system. The resulting surface chemistry description is combined with fundamental conservation laws, including mass transport, potential distribution, and competitive adsorption, to form the tertiary current distribution model. Two-dimensional finite element simulations of this model provide information about the causes of the thickness of the copper electrodeposition layer, including potential variations of the cathodic surface, fluctuations in the cupric ion concentration and coverage of the accelerator. The model is used to predict the filling process with different current densities and SPS concentrations and is verified by copper electrodeposition experiments. The "optimal zone" was determined for the SPS concentration and the inward current density to achieve good TSV filling. Sample points in the outer zone were selected and the failure mechanism was studied to help to infer the right direction toward the "optimal zone" in copper electrodeposition. The models are potentially useful tools for measuring the properties of electrolyte solutions and for the optimization of copper electrodeposition processes. Through-Silicon via (TSV) is one of key techniques for 3D integration with many advantages. The electroplated copper is a major interconnect material in TSV due to its high electrical conductivity, lower cost than alternative deposition methods.1,2 Copper electrodeposition as an efficient method of metallization is widely accepted, and it has been proposed by many researchers. [3][4][5] According to the feature of TSV on chip, some special additives such as accelerator (Bis-(3-sulfopropyl) disulfide, or SPS), suppressor (Polyethylene glycol, or PEG), leveler (Janus Green B) and Cl − , are usually applied in electrolyte solution to assist copper filling with void-free.6-8 An appropriate distribution of additives provides a fast growth at the bottom and the growth rate at via opening is suppressed, as improper distribution of additives result in unfilled feature.9 Hence, behaviors of additives on the cathode surface are very important for TSV filling process. However, there are still some challenges for establishing the optimal process for copper filling because the influence of feature of TSV, complicated mechanisms of additives behaviors and complicated fabricated process.2 A predictive numerical model of the copper electrodeposition process is a very helpful tool to investigate the optimal process with some advantages, such as low cost and efficiency. A typical numerical model should have the ability to predict feature evolution of copper electrodeposition under different operating conditi...

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Section: 43mentioning

confidence: 99%

Section: 43mentioning

confidence: 99%

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RETRACTED: Copper Electrodeposition in Through-Silicon Via under Galvanostatic Condition

Luo

Chen

Zhang

et al. 2016

J. Electrochem. Soc.

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“…polyalkylene glycols, PAGs) [1,[5][6][7][8][9][10][11], its specific anti-suppressor (bis-(sodium-sulfopropyl)-disulfide, SPS) and a leveler additive (type-II suppressor [5]) dissolved in the Cu(II)-rich plating bath. Particular additive mass transport effects and adsorption kinetics [12][13][14] in conjunction with geometric shape-evolution effects need to be operative during the feature fill [15][16][17][18][19] thus generating a non-uniform surface coverage of PAG suppressors and SPS anti-suppressors. In this way, the suppressing effect of the PAG chemistry is effective predominantly at the upper feature side walls and the 3 topmost wafer surface whereas the SPS accelerated copper deposition occurs preferentially at the feature bottom, thus leading to the desired differential electrodeposition.…”

Section: Introductionmentioning

confidence: 99%

Towards Structural Analysis of Polymeric Contaminants in Electrodeposited Cu films

Moreno‐García

Grimaudo

Riedo

et al. 2016

Electrochimica Acta

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ABSTRACT:The incorporation of plating additives into Cu films was studied by means of preferential inclusion and accumulation of contaminants at grain boundaries inside the Cu deposit whereas the Cu grains remain largely contamination-free. A novel LIMS desorption approach is presented which allows for a molecular structure analysis of the polymeric additive ensembles preferentially embedded at grain boundaries of the Cu deposit. Our LIMS analysis confirms a recently discussed mechanism on the action of these hybrid additives which relies on their interaction with thiolate-stabilized Cu(I) intermediates.

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“…[9][10][11] The additive system, used for PCB electroplating, generally includes accelerator (i.e., bis(3-sulfopropyl) disulfide), inhibitor (i.e., poly (ethyleneglycol)) and leveler (i.e., Janus Green B). [12][13][14][15] The synergy of these additives gives rise to a uniform plating or superfilling in the TH. 9,12 Some literatures indicated that leveler plays an important or decisive role in the accelerator-inhibitor-leveler system.…”

Section: Introductionmentioning

confidence: 99%

Polyquaternium-2: A New Levelling Agent for Copper Electroplating from Acidic Sulphate Bath

Chen

Wang

et al. 2016

Electrochemistry

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Poly[bis(2-chloroethyl)ether-alt-1,3-bis [3-(dimethylamino)propyl]urea] (Polyquaternium-2) was employed as a leveler in the through-hole (TH) electroplating experiments from an acidic sulphate bath. The interaction between Polyquaternium-2 and copper surface was investigated using Field Emission Scanning Electronic Microscope (FE-SEM) and X-ray Photoelectron Spectra (XPS). The electrochemical behavior of Polyquaternium-2 and its interaction with other additives, such as a suppressor and an accelerator were characterized using rotating disk electrode. Polyquaternium-2 could absorb on copper surface to form an adsorption layer and inhibit the copper electrodeposition. As shown in the TH electroplating experiments, a copper deposit with uniform thickness was obtained when 0.17 µmol/L Polyquaternium-2 was added. The addition of Polyquaternium-2 could also increase the cathodic polarization, which is attributed to the adsorption of Polyquaternium-2 on the cathode in the process of TH electroplating. The results indicate that Polyquaternium-2 is an effective leveler used for TH electroplating, having a good synergy with SPS, PEG and Cl − .

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Curvature enhanced adsorbate coverage mechanism for bottom-up superfilling and bump control in damascene processing

Cited by 143 publications

References 40 publications

RETRACTED: Copper Electrodeposition in Through-Silicon Via under Galvanostatic Condition

RETRACTED: Copper Electrodeposition in Through-Silicon Via under Galvanostatic Condition

Towards Structural Analysis of Polymeric Contaminants in Electrodeposited Cu films

Polyquaternium-2: A New Levelling Agent for Copper Electroplating from Acidic Sulphate Bath

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