CW lasing of current injection blue GaN-based vertical cavity surface emitting laser

Lu, Tien−Chang; Kao, Chih−Chiang; Kuo, Hao‐Chung; Huang, Gen Sheng; Wang, Shing Chung

doi:10.1063/1.2908034

Cited by 267 publications

(173 citation statements)

References 10 publications

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“…30 It had one bottom epitaxial AlGaN/GaN DBR, one top dielectric DBR, and a 240 nm indiumtin-oxide (ITO) layer as a current spreading layer. It operated under continuous wave (CW) conditions at 77K at a wavelength of 462.8 nm.…”

Section: State-of-the-artmentioning

confidence: 99%

Progress and challenges in electrically pumped GaN-based VCSELs

et al. 2016

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The Vertical-Cavity Surface-Emitting Laser (VCSEL) is an established optical source in short-distance optical communication links, computer mice and tailored infrared power heating systems. Its low power consumption, easy integration into two-dimensional arrays, and low-cost manufacturing also make this type of semiconductor laser suitable for application in areas such as high-resolution printing, medical applications, and general lighting. However, these applications require emission wavelengths in the blue-UV instead of the established infrared regime, which can be achieved by using GaN-based instead of GaAs-based materials. The development of GaN-based VCSELs is challenging, but during recent years several groups have managed to demonstrate electrically pumped GaN-based VCSELs with close to 1 mW of optical output power and threshold current densities between 3-16 kA/cm 2 . The performance is limited by challenges such as achieving high-reflectivity mirrors, vertical and lateral carrier confinement, efficient lateral current spreading, accurate cavity length control and lateral optical mode confinement. This paper summarizes different strategies to solve these issues in electrically pumped GaN-VCSELs together with state-of-the-art results. We will highlight our work on combined transverse current and optical mode confinement, where we show that many structures used for current confinement result in unintentionally optically anti-guided resonators. Such resonators can have a very high optical loss, which easily doubles the threshold gain for lasing. We will also present an alternative to the use of distributed Bragg reflectors as high-reflectivity mirrors, namely TiO2/air high contrast gratings (HCGs). Fabricated HCGs of this type show a high reflectivity (>95%) over a 25 nm wavelength span.

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Section: State-of-the-artmentioning

confidence: 99%

Progress and challenges in electrically pumped GaN-based VCSELs

et al. 2016

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“…1 The 5-λ-cavity is sandwiched between a 29-period AlN/GaN distributed Bragg reflector (DBR) on the n-doped side and an 8-period Ta 2 O 5 /SiO 2 dielectric DBR on the p-side (Fig. 2).…”

Section: Vcsel With Ten Thin Quantum Wellsmentioning

confidence: 99%

“…Electrically pumped GaN-VCSELs have been demonstrated only recently and they exhibit severe performance restrictions. 1,2 Based on our previous experience with GaN-based VCSEL design and simulation, 3 we here analyze some recently manufactured GaN-VCSELs using advanced laser simulation software. 4 The simulation self-consistently combines carrier transport, photon emission, and multimode optical wave guiding.…”

Section: Introductionmentioning

confidence: 99%

GaN-based VCSELs: analysis of internal device physics and performance limitations

Piprek¹,

2010

SPIE Proceedings

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GaN-based vertical-cavity surface-emitting lasers (VCSELs) are expected to exhibit several advantages over their already widely used edge-emitting counterparts, including lower manufacturing costs, circular output beams, and longer lifetime. However, in contrast to the great success of GaN-based edge-emitting lasers in recent years, GaN-VCSELs still face significant challenges. Electrically pumped devices have been demonstrated only recently and they exhibit severe performance restrictions. We here analyze these recently manufactured GaN-VCSELs using advanced laser simulation software. The simulation self-consistently combines carrier transport, photon emission, and multi-mode optical wave guiding. For the quantum wells, Schrödinger and Poisson equations are solved iteratively at every bias point to account for the Quantum-Confined Stark Effect. Our analysis shows that thick quantum wells allow for the almost complete elimination of the built-in quantum well polarization field. The simulations also reveal several performance limiting effects, e.g., gain-peak offset, current crowding, and electron leakage. Design optimization options are discussed and simulated.

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“…III-Nitride based materials are highly attractive for making vertical microcavity (MC) light emitters such as strongly coupled polariton lasers and conventional vertical-cavity surface-emitting lasers (VCSELs) due to their large exciton binding energies and wide spectra tuning range in the ultraviolet-visible region [1][2][3][4][5][6][7][8][9][10][11][12]. So far, electrically pumped polariton emitters and conventional VCSELs have been demonstrated in III-nitride based MCs at room temperature (RT).…”

Section: Introductionmentioning

confidence: 99%

Electrically Pumped III-N Microcavity Light Emitters Incorporating an Oxide Confinement Aperture

Lai

Chang

et al. 2017

Nanoscale Res Lett

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In this work, we report on electrically pumped III-N microcavity (MC) light emitters incorporating oxide confinement apertures. The utilized SiO 2 aperture can provide a planar ITO design with a higher index contrast (~1) over other previously reported approaches. The fabricated MC light emitter with a 15-μm-aperture shows a turn-on voltage of 3.3 V, which is comparable to conventional light emitting diodes (LEDs), showing a good electrical property of the proposed structure. A uniform light output profile within the emission aperture suggesting the good capability of current spreading and current confinement of ITO and SiO 2 aperture, respectively. Although the quality factor (Q) of fabricated MC is not high enough to achieve lasing action (~500), a superlinear emission can still be reached under a high current injection density (2.83 kA/cm 2 ) at 77 K through the exciton-exciton scattering, indicating the high potential of this structure for realizing excitonic vertical-cavity surface-emitting laser (VCSEL) action or even polariton laser after fabrication optimization.

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CW lasing of current injection blue GaN-based vertical cavity surface emitting laser

Cited by 267 publications

References 10 publications

Progress and challenges in electrically pumped GaN-based VCSELs

Progress and challenges in electrically pumped GaN-based VCSELs

GaN-based VCSELs: analysis of internal device physics and performance limitations

Electrically Pumped III-N Microcavity Light Emitters Incorporating an Oxide Confinement Aperture

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