Czochralski growth of CdTe and CdMnTe from liquid encapsulated melts

Hobgood, H. McD.; Swanson, B. W.; Thomas, R.N.

doi:10.1016/0022-0248(87)90484-2

Cited by 33 publications

(9 citation statements)

References 15 publications

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“…The bulk crystals of Cd 1Àx Mn x Te have been grown from melt with different growth methods, such as Czochralski growth method [4], traveling heater method (THM) [3], vertical gradient freeze method (VGF) [5], and vertical Bridgman (VB) method [6,7]. Among these growth methods, the VB method is mostly adopted mainly due to its simplicity and capability of adjusting the growth temperature gradient and velocity.…”

Section: Introductionmentioning

confidence: 99%

Vertical Bridgman growth and characterization of CdMnTe substrates for HgCdTe epitaxy

Zhang

Wang

et al. 2008

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Vertical Bridgman growth and characterization of CdMnTe substrates for HgCdTe epitaxy

Zhang

Wang

et al. 2008

Journal of Crystal Growth

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“…II-VI compounds have also been attempted by this method [40][41][42]. In order to prevent evaporation of constituent elements, an encapsulant is needed.…”

Section: Liquid Encapsulation Czochralski (Lec)mentioning

confidence: 99%

Bulk Crystal Growth of Wide-Bandgap II-VI Materials

Isshiki

Wang

2010

Bulk Crystal Growth of Electronic, Optical &Amp; Optoelectronic Materials

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II-VI compound semiconductors are one of the most important optoelectronic materials. Wide-gap II-VI compounds, especially, ZnS, ZnSe, ZnO and ZnTe, are promising materials in fabricating laser diodes (LDs) and light-emitting diodes (LEDs) operating in the visible and ultraviolet spectral ranges. The recent challenge for their application is the development of sizable high-purity and high-quality bulk crystals as substrates for fabricating devices. Progress has been made in the past several decades in the areas of bulk crystal growth with regard to stoichiometric control, uniformity, reproducibility, thermal stability, diameter control, and impurity and dopant control. Sizable ZnO, ZnSe and ZnTe single crystals have conventionally been grown by seeded physical vapor transport (SPVT), the hydrothermal method, Bridgman methods, and so on. These advances have attracted much attention for the development of future optoelectronics.

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“…In the literature it is reported that B 2 O 3 has been used as encapsulant also for growing CdTe crystals in the Liquid Encapsulated Chzochralski (LEC) configuration [10][11][12][13][14][15]. Some of the authors reported that a discoloration of the B 2 O 3 happens, and they suggested this is due to the solubility of CdTe in B 2 O 3 [10,11,13].…”

Section: Introductionmentioning

confidence: 95%

“…Moreover, a strong boron contamination of the crystal was evidenced [13,14]. However, the main problem connected to the growth of CdTe by LEC seems to be due to the use of large thermal gradients at the interface (>400 C) connected to the low thermal conductivity of CdTe [15].…”

Section: Introductionmentioning

confidence: 98%