Damage Evolution in Helium-Hydrogen Co-Implanted (100) Silicon

Tonini, Rita; Corni, Federico; Nobili, C.; Ottaviani, G.; Cazzaniga, F.; Queirolo, G.

doi:10.4028/www.scientific.net/ssp.82-84.291

Cited by 8 publications

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“…The results are reported in Ref. 31. At 400°C about 1 4 of He is out diffused, its distribution becomes narrower ͑about 70 nm FWHM͒ and He accumulates around 280 nm.…”

Section: A Samplesmentioning

confidence: 67%

“…The FWHM ͑full width at half maximum͒ of the two distributions was about 190 nm. 31 Similar samples, produced in the same conditions were characterized as a function of the isochronal heat treatments by various analytical techniques: backscattering in channeling conditions ͑RBS-C͒ to detect damage distribution, elastic recoil detection ͑ERD͒ to measure the helium and hydrogen content, atomic force microscopy ͑AFM͒ to analyze the surface morphology. The results are reported in Ref.…”

Section: A Samplesmentioning

confidence: 99%

“…39. The nonequilibrium shape of the defects, combined with the independent information on the implanted species concentration, 31 allows us to infer that cavities are still decorated with gas atoms.…”

Section: From 100°c To 700°c Thermal Treatmentsmentioning

confidence: 99%

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Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancylike defects with thermal treatments

et al. 2006

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Si p-type ͑100͒ samples were coimplanted at room temperature with He + ions at 30 keV with a dose of 1 ϫ 10 16 ions/ cm 2 and successively with H + ions at 24 keV with a dose of 1 ϫ 10 16 ions/ cm 2 . A series of samples was thermally treated for 2 h from 100 to 900°C at 100°C steps to study the evolution of pointlike and extended defects by two complementary techniques: positron Doppler broadening spectroscopy and transmission electron microscopy. Depth profiling the samples with a positron beam led to the identification of five different traps and the evolution of their profile distributions with thermal treatments. The positron traps were identified as decorated vacancy clusters of different sizes. Their decoration by implanted ions and in some case by oxygen was probed by coincidence Doppler broadening spectroscopy. Up to 300°C annealing temperature positrons probe three distributions of different decorated defects covering regions of the sample down to 400-450 nm. Starting from 300°C annealing temperature no defects were revealed by positrons in the region next to the peak of the implanted ions distributions positioned around 280 nm, where extended defects are expected; this indicates complete filling of the defects by H and He. From 300 to 600°C decorated vacancy clusters of different sizes appear progressively in the region below 280 nm, with a distribution moving deeper into the sample. Comparison with previous measurements on He-implanted samples points out the chemical action of H. Hydrogen atoms interact with the previous damage by He, producing more stabilized vacancylike defects distributed through the damage region of the sample. Electron microscopy shows the transformation of the extended defects from platelets to blisters and cavities.

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“…The results are reported in Ref. 31. At 400°C about 1 4 of He is out diffused, its distribution becomes narrower ͑about 70 nm FWHM͒ and He accumulates around 280 nm.…”

Section: A Samplesmentioning

confidence: 67%

Section: A Samplesmentioning

confidence: 99%

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Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancylike defects with thermal treatments

et al. 2006

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“…This enhancement is different from what was observed in H-induced Si blistering where the relative increase in backscattering yield was found to be much more pronounced near the surface than beyond the damage layer. 12,14 This irreversible effect was attributed to the macroscopic deformation of blisters cap. 14 Our atomic force microscopy analysis shows that GaN surface remains unchanged up to 550°C in agreement with detailed blistering kinetics study reported earlier.…”

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confidence: 99%

“…12,14 This irreversible effect was attributed to the macroscopic deformation of blisters cap. 14 Our atomic force microscopy analysis shows that GaN surface remains unchanged up to 550°C in agreement with detailed blistering kinetics study reported earlier. 15 It is also worth to mention that the macroscopic swelling and surface elevation of ion implanted GaN is always accompanied by the formation of very large cavities.…”

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Microstructural evolution in H ion induced splitting of freestanding GaN

Moutanabbir

Scholz

Senz

et al. 2008

Applied Physics Letters

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We investigated the microstructural transformations during hydrogen ion-induced splitting of GaN thin layers. Cross-sectional transmission electron microscopy and positron annihilation spectroscopy data show that the implanted region is decorated with a high density of 1-2 nm bubbles resulting from vacancy clustering during implantation. These nanobubbles persist up to 450°C. Ion channeling data show a strong dechanneling enhancement in this temperature range tentatively attributed to strain-induced lattice distortion. The dechanneling level decreases following the formation of plateletlike structures at 475°C. Extended internal surfaces develop around 550°C leading to the exfoliation of GaN thin layer.

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Hydrogen blistering of silicon: Progress in fundamental understanding

Terreault

2007

Physica Status Solidi (a)

119

107

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When silicon is implanted with a sufficient concentration of H ions, at low to moderate temperature, and subsequently annealed at high temperature, dome‐shaped gas‐filled blisters and/or craters of exploded blisters appear on the surface. Under particular conditions, blistering can be produced by plasma hydrogenation as well. The phenomenon is another facet of hydrogen behaviour in silicon, a question with both fundamental and applied implications. Blistering is at the origin of the “ion‐cutting” process for the fabrication of silicon‐on‐insulator and other heterostructures; this process is particularly useful whenever atomically sharp interfaces between layers are required. The novelty and vast potential of this process has spurred since the mid‐1990's a burst of experimental activity on blistering. The purposes of those works were either to improve or extend the ion‐cut process, or to clarify its underlying mechanisms. In “mechanisms”, the plural is used to convey the fact that it is a multi‐step phenomenon. Because of this complexity, the theoretical work, in comparison, is far less abundant. Hydrogen blistering of silicon is qualitatively understood in broad terms: H being insoluble in Si, it tends to segregate into cavities which grow and coalesce at high temperature, and the H2 pressure in the cavities finally deforms the surface. In fact, our understanding of the microscopic mechanisms has progressed much beyond that level thanks to the sophisticated work that has been carried out using techniques such as transmission electron microscopy, Rutherford backscattering in the channelling mode, infrared spectroscopy of local vibrational modes, stress and strain measurements, and others. The effects of n‐ or p‐doping, He ion coimplantation, and isotope substitution have also greatly helped in discriminating between different hypotheses. After a review of the most relevant experimental facts, the blistering mechanisms that have been proposed in the literature will be discussed and their conformity with the data assessed. Finally an attempt will be made to identify the key questions and suggest a few avenues for future work. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Damage Evolution in Helium-Hydrogen Co-Implanted (100) Silicon

Cited by 8 publications

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Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancylike defects with thermal treatments

Single-crystal silicon coimplanted by helium and hydrogen: Evolution of decorated vacancylike defects with thermal treatments

Microstructural evolution in H ion induced splitting of freestanding GaN

Hydrogen blistering of silicon: Progress in fundamental understanding

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