Damage Factor for Radiation-Induced Dark Current in InGaAs Photodiodes

Gilard, O.; How, Lip Sun; Delbergue, Audrey; Inguimbert, C.; Nuns, T.; Barbero, Juan; Moreno, Juan Manuel; Bouet, L.; Mariojouls, S.; Boutillier, M.

doi:10.1109/tns.2018.2799742

Cited by 19 publications

(4 citation statements)

References 19 publications

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“…It is well known that there is an increased sensitivity of InGaAs photodiodes to displacement damage compared to siliconbased technology which is relevant for the increased dark current here [8]. Post irradiation dark currents were tracked over the course of 6 months with regard to room temperature annealing which was not observed.…”

Section: Dark Currentmentioning

confidence: 97%

Radiation qualification and optical performance of the InGaAs type imaging sensor for the vSWIR spectral range in the VEM instrument on the VERITAS mission

Pohl,

del Togno,

Rosas Ortiz

et al. 2023

Infrared Remote Sensing and Instrumentation XXXI

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The Venus Emissivity Mapper (VEM) as part of NASAs Venus Emissivity, Radio science, InSAR, Topography, And Spectroscopy mission (VERITAS) is designed for mapping the surface of Venus within dedicated atmospheric spectral windows. The instrument will provide global coverage for detection of thermal emissions like volcanic activity, surface rock composition, water abundance and cloud formation as well as dynamics by observing 15 narrow filter bands in the near infrared to short wavelength infrared (NIR, SWIR) range of 862 nm to 1510 nm. An almost identical instrument will be part of ESAs EnVision mission to Venus, the VenSpec-M in the Venus Spectroscopy Suite (VenSpec). The utilized photodetector is an InGaAs type imaging sensor with integrated thermoelectric (TE) cooling. It comprises a 640x512 pixel array with 20 µm pixel pitch.Following the mission requirements we irradiated the detector with a set of ions of various stopping powers and range distributions from lower energy Argon (Ar) to higher energy Xenon (Xe). Therefore, exploiting the mentioned ions and proper tilt angles during irradiation, our data covers a Linear Energy Transfer (LET) range of 7 to 75 MeVcm²/mg which fulfills NASA/JPL led space qualification standards (up to 75 MeVcm²/mg) as well as ESA space qualification standards (up to 60 MeVcm²/mg) for heavy-ion irradiation.Our electrical setup consists of a dedicated over-current protection detecting high-current states occurring during irradiation steps and immediate power cycling to prevent physical damage of the device. From the event rates seen during the test we calculated the specific cross-sections and therefore can estimate the expected event rates at Venus during the mission.The detector showed saturated cross-sections below 1E-3 cm² at 10°C with acceptable event rates for the highest LETs and our applications.

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Section: Dark Currentmentioning

confidence: 97%

Radiation qualification and optical performance of the InGaAs type imaging sensor for the vSWIR spectral range in the VEM instrument on the VERITAS mission

Pohl,

del Togno,

Rosas Ortiz

et al. 2023

Infrared Remote Sensing and Instrumentation XXXI

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“…[11][12][13][14] In addition, non-ionizing energy loss and dark current damage factor have also been developed to assess and anticipate device's deterioration. [15,16] However, few studies have been conducted on the microscopic damage mechanism of γ irradiation by optical techniques.…”

Section: Introductionmentioning

confidence: 99%

γ‐Irradiation Damage Mechanism of InGaAs/InP p–i–n Focal Plane Array Investigated by Spatially Resolved and Temperature‐Dependent Photoluminescence

Cai

Zhu

Wang

et al. 2023

Physica Status Solidi (b)

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InGaAs infrared photodetectors subjected to irradiation environments undergo microstructural modifications and concomitant degradation, yet the underlying microscopic mechanism has not been fully studied. Herein, the influence of γ irradiation (total dose of 20 krad(Si)) on an In0.53Ga0.47 As/InP p–i–n focal plane array is studied by spatially resolved and temperature‐dependent (3–290 K) photoluminescence (PL) measurements. By comparative PL studies of pre‐irradiation and post‐irradiation, the spatially resolved PL results of irradiation indicate that the in‐plane uniformity of all PL features presents bigger fluctuations, meanwhile, the results of temperature‐dependence PL demonstrate that the PL integral intensity related to impurities and interface‐bound states is significantly weakened after irradiation. This can be attributed to the enhanced migration and reaction of defects caused by γ irradiation. Some mobile defects tend to migrate to lower energy regions, such as interfaces, and form defect complexes. In addition, some impurities combine with mobile defects and form inactive impurity–defect complexes. The findings reveal the effects of low‐dose γ irradiation on InGaAs devices and may provide useful information for enhancing radiation resistance.

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“…The relationship between our theory and experimental measurements includes, e.g., the defect capture time versus decayed photoluminescence peak with time, and current-suppression factor versus the reduced photocurrent in post-irradiated detectors. For possible advantages of our theory, we would like to point out that it could help the design of quantum-well focal plane arrays [21,22] which must be characterized in advance for damages by space radiation [23,24]. They should achieve not only high performance [25] but also radiation tolerance to the radiation encountered in a satellite orbit.…”

Section: Introductionmentioning

confidence: 99%

Defect capturing and charging dynamics and their effects on magneto-transport of electrons in quantum wells

Iurov¹,

Huang²,

Gumbs³

et al. 2021

J. Phys.: Condens. Matter

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The calculated defect corrections to the polarization and dielectric functions for Bloch electrons in quantum wells are presented. These results were employed to derive the first two moment equations from the Boltzmann transport theory and then applied to explore the role played by defects on the magneto-transport of Bloch electrons. Additionally, we have derived analytically the inverse momentum-relaxation time and mobility tensor for Bloch electrons by making use of the screened defect-corrected polarization function. Based on quantum-statistical theory, we have investigated the defect capture and charging dynamics by employing a parameterized physics-based model for defects to obtain defect wave functions. Both capture and relaxation rates, as well as the density for captured Bloch electrons, were calculated self-consistently as functions of temperature, doping density and chosen defect parameters. By applying the energy-balance equation, the number of occupied energy levels and the chemical potential of defects were determined, with which the transition rate for defect capturing was obtained. By applying these results, the defect energy-relaxation, capture and escape rates, and Bloch-electron chemical potential were calculated self-consistently for a non-canonical subsystem of Bloch electrons. At the same time, the energy- and momentum-relaxation rates of Bloch electrons, as well as the current suppression factor, were also investigated quantitatively. By combining all these results, the temperature dependence of the Hall and longitudinal mobilities was presented for Bloch electrons in either single- or multi-quantum wells.

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Damage Factor for Radiation-Induced Dark Current in InGaAs Photodiodes

Cited by 19 publications

References 19 publications

Radiation qualification and optical performance of the InGaAs type imaging sensor for the vSWIR spectral range in the VEM instrument on the VERITAS mission

Radiation qualification and optical performance of the InGaAs type imaging sensor for the vSWIR spectral range in the VEM instrument on the VERITAS mission

γ‐Irradiation Damage Mechanism of InGaAs/InP p–i–n Focal Plane Array Investigated by Spatially Resolved and Temperature‐Dependent Photoluminescence

Defect capturing and charging dynamics and their effects on magneto-transport of electrons in quantum wells

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