In this paper a compendium of InGaAs irradiation test results is presented. These photodiodes were irradiated either with γ γ γ γ-rays, protons, neutrons, electrons, pions, alpha particles or carbon ions of various energies. The displacement damage dose formalism was found to be effective in describing the radiation-induced dark current increase of any of the studied InGaAs photodiodes. The exploitation of capacitancebias voltage and current-bias voltage measurements also allows to deduce a damage factor that can be used to assess the radiation-induced dark current in a great number of radiation environments.Index Terms -Photodiodes, indium gallium arsenide devices, dark current, displacement damage.O. Gilard and M. Boutillier are with the French Space Agency CNES, 18 av Edouard Belin,

Following a program funded by the European Space Agency, a novel laser-diode module has been created and tested to ESCC-23201-compliant space standards. Manufactured by Gooch & Housego, the module is set for imminent entry to the European space market for use in optical signal-processing and telecom systems. Emission is from a 1550nm DFB semiconductor laser diode driven at constant nominal current and temperature. Combined with a wavelength stability of better than ±0.1nm and internal data rate of up to 3.2GHz, innovative sub-design and packaging provides for a unique power capability comprising a start-of-life ex-fibre power of >90mW and a typical electric power consumption that, at <4.1W, is down to 25% of that of similar products. Validation testing by AdvEOTec (France) indicates a comprehensive set of space compliances such as in proton irradiation, humidity, hot/cold storage, rapid depressurisation, vibration and 1,000g shock, as well as immunity to ±8kV of ESD, 10-5 mbar of vacuum, and 100krad of gamma irradiation. Unique methodologies for life-test modelling and production screening, established by Thales Alenia Space (France), provisionally confirm a 15-year space-compliant operating life. Space-compliant product, as presented, is intended to be supplied for a period of at least 5 years.

Articles you may be interested inHigh operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices Appl. Phys. Lett. 98, 143501 (2011); 10.1063/1.3573867 High-energy proton irradiation induced changes in the linear-kink noise overshoot of 0.10 μm partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 95, 4084 (2004); 10.1063/1.1686898 Solar-blind AlGaN-based Schottky photodiodes with low noise and high detectivityHigh-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers A series of proton irradiations has been carried out on p-n silicon photodiodes for the purpose of assessing the suitability of these devices for the European Galileo space mission. The irradiations were performed at energies of 60, 100, and 150 MeV with proton fluences ranging from 1.7 ϫ 10 10 to 1 ϫ 10 11 protons/ cm 2 . Dark current, spectral responsivity, and dark current noise were measured before and after each irradiation step. We observed an increase in both dark current, dark current noise, and noise equivalent power and a drop of the spectral responsivity with increasing displacement damage dose. An analytical model has been developed to investigate proton damage effects through the modeling of the electro-optical characteristics of the photodiode. Experimental degradations were successfully explained taking into account the degradation of the minority carrier diffusion length in the N-region of the photodiode. The degradation model was then applied to assess the end-of-life performance of these devices in the framework of the Galileo mission.

The permanent degradation introduced in the main electrical parameters of a newly developed European optocoupler type is described, as a function of proton fluences and Co-60 total ionizing dose. Optoi's devices assembled in Leadless Chip Carrier packages, coded OIER10 are being developed in the framework of an ECI project for ESA, aimed at the ESCC evaluation of Optoi optocouplers. The first analyses of the recent irradiation results show a good behavior of the parts under proton and gamma irradiation.

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