In this paper a compendium of InGaAs irradiation test results is presented. These photodiodes were irradiated either with γ γ γ γ-rays, protons, neutrons, electrons, pions, alpha particles or carbon ions of various energies. The displacement damage dose formalism was found to be effective in describing the radiation-induced dark current increase of any of the studied InGaAs photodiodes. The exploitation of capacitancebias voltage and current-bias voltage measurements also allows to deduce a damage factor that can be used to assess the radiation-induced dark current in a great number of radiation environments.Index Terms -Photodiodes, indium gallium arsenide devices, dark current, displacement damage.O. Gilard and M. Boutillier are with the French Space Agency CNES, 18 av Edouard Belin,

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