Dark current suppression of MgZnO metal-semiconductor-metal solar-blind ultraviolet photodetector by asymmetric electrode structures

Wang, Ping; Zheng, Qinghong; Tang, Qing; Yang, Yintang; Guo, Lixin; Huang, Feng; Song, Zhenjie; Zhang, Zhiyong

doi:10.1364/ol.39.000375

Cited by 10 publications

(8 citation statements)

References 24 publications

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“…The performance of Mg x Zn 1− x O‐based DUVPDs can be further improved by reasonable design of electrode structures or doping of Mg x Zn 1− x O . Wang et al observed that compared with the DUV devices that used conventional electrode, MSM photodetectors utilizing semicircular and triangular electrodes displayed a 20.5% and 100% increase in photocurrent, respectively .…”

Section: Mgxzn1−xomentioning

confidence: 99%

“…Wang et al observed that compared with the DUV devices that used conventional electrode, MSM photodetectors utilizing semicircular and triangular electrodes displayed a 20.5% and 100% increase in photocurrent, respectively . Furthermore, by using asymmetric Schottky barrier and electrode area, the dark current of MSM photodetectors can be reduced by 20 times and 1.3 times, respectively, without a noticeable loss in photocurrent . The n‐type conduction of Mg x Zn 1− x O films can be overwhelmingly improved by 2 orders of magnitude through employing triethylgallium as the dopant source during MOCVD growth process .…”

Section: Mgxzn1−xomentioning

confidence: 99%

“…As a supplement to photoconductors, MSM photodetectors based on Mg x Zn 1− x O films have also received wide research interest . To overcome phase separation in Mg x Zn 1− x O films with high Mg content, some strategies have been developed such as using a ZnO buffer layer during MBE growth or adopting relatively high substrate temperature and low growth rate during magnetron sputtering .…”

Section: Mgxzn1−xomentioning

confidence: 99%

See 2 more Smart Citations

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Xie

Tong

et al. 2019

Adv Funct Materials

410

261

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Due to its significant applications in many relevant fields, light detection in the solar-blind deep-ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the realization of various high-performance DUV photodetectors (DUVPDs) with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional DUV detectors. This article presents a comprehensive review of the applications of inorganic UWBG semiconductors for solar-blind DUV light detection in the past several decades. Different kinds of DUVPDs, which are based on varied UWBG semiconductors including Ga 2 O 3 , Mg x Zn 1−x O, III-nitride compounds (Al x Ga 1−x N/AlN and BN), diamond, etc., and operate on different working principles, are introduced and discussed systematically. Some emerging techniques to optimize device performance are addressed as well. Finally, the existing techniques are summarized and future challenges are proposed in order to shed light on development in this critical research field.with energy much higher than the semiconductor bandgap. Moreover, due to light absorption by the surface passivation layers, typically Si oxide, quantum efficiency in the DUV range is greatly reduced. The passivation layers are also easily degraded by UV illumination. Finally, for highly sensitive UV photodetection, the detectors need to be cooled to reduce dark current; the cooled detectors, however, behave like cold traps for contaminants which degrade the detectivity.In the past two decades, the emergence of UV photodetectors based on wide-bandgap (WBG) semiconductors has opened up an avenue to circumvent the above-mentioned dilemma. The WBG semiconductors such as SiC, GaN, and some group II-V compounds, typically have bandgaps exceeding ≈3.10 eV, enabling room-temperature detectors to possess fast response speed, and offering intrinsic visible-blindness (response cutoff wavelength: ≈400 nm). [14][15][16] Moreover, these semiconductors generally possess significantly higher thermal conductivity than Si, which renders them suitable for operation in harsh environments (e.g., high temperature and high power). The electron velocity of these materials at large electric fields is generally higher than that of common semiconductors, although WBG semiconductors exhibit relatively lower electron and hole mobilities. Compared with the abovementioned conventional WBG semiconductors, ultrawide-bandgap (UWBG) semiconductors, as the next generation of semiconductor materials with bandgaps significantly wider than the 3.4 eV of GaN, are particularly suitable for solar-blind DUV light detection. [17][18][19][20]

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Section: Mgxzn1−xomentioning

confidence: 99%

Section: Mgxzn1−xomentioning

confidence: 99%

Section: Mgxzn1−xomentioning

confidence: 99%

See 1 more Smart Citation

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Xie

Tong

et al. 2019

Adv Funct Materials

410

261

View full text Add to dashboard Cite

show abstract

“…Therefore, ZnO-based material is one of the best candidate materials for preparing UV photodetectors. [29][30][31][32][33] After years of development, UV photodetectors based on ZnO and ZnMgO films have made great process, which has been discussed in the previous reviews. [13][14][15] Notably, to improve the performance of ZnO-based UV photodetectors, various methods have been selected, such as surface treatment, surface plasmonic effect, mixed-phase material, and so on.…”

Section: Zno-based Film Photodetectorsmentioning

confidence: 99%

Ultraviolet photodetectors based on wide bandgap oxide semiconductor films

Zhou

Chen

et al. 2019

Chinese Phys. B

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Ultraviolet (UV) photodetectors have attracted more and more attention due to their great potential applications in missile tracking, flame detecting, pollution monitoring, ozone layer monitoring, and so on. Owing to the special characteristics of large bandgap, solution processable, low cost, environmentally friendly, etc., wide bandgap oxide semiconductor materials, such as ZnO, ZnMgO, Ga 2 O 3 , TiO 2 , and NiO, have gradually become a series of star materials in the field of semiconductor UV detection. In this paper, a review is presented on the development of UV photodetectors based on wide bandgap oxide semiconductor films.

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“…24) In 2014, our group has also found that asymmetric rectangular Schottky barriers and electrode areas in MgZnO MSM PDs have a lower dark current than the symmetric ones without apparent photocurrent scarification. 25) However, MgZnO MSM PDs with asymmetric semicircular and asymmetric triangular Schottky contacts to improve both the dark current and photocurrent characteristics have never been reported.…”

Section: Introductionmentioning

confidence: 99%

Asymmetric semicircular and triangular electrode structures to increase photo-to-dark-current ratio in MgZnO metal semiconductor metal photodetectors

Song¹,

Wang²,

Guo³

et al. 2015

Jpn. J. Appl. Phys.

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The effects of asymmetric semicircular and asymmetric triangular Schottky barriers on the current-voltage (I-V) characteristics of MgZnO metal semiconductor metal (MSM) photodetectors (PDs) have been investigated using a two-dimensional (2D) physical model based on the driftdiffusion theory. At a bias of 5 V, compared with the symmetric rectangular Schottky barrier MgZnO MSM PD, the dark current of the asymmetric semicircular and triangular Schottky barrier MgZnO MSM PDs is reduced by a factor of 15 for each electrode structure. On the other hand, the photocurrents of these asymmetric semicircular and asymmetric triangular PDs are enhanced by factors of 1.2 and 2, respectively. On the basis of these I-V characteristics, the highest photo-to-dark-current ratio (PDR) of 7294 is achieved in the asymmetric triangular Schottky barrier MgZnO MSM PD. In addition, the PDR can be increased further by optimizations, such as the incorporation of different metals to provide a higher asymmetry. The results show that the design of the asymmetric semicircular and asymmetric triangular Schottky barriers on the MgZnO MSM PDs is a promising method for applications requiring a low power and a high PDR.

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Dark current suppression of MgZnO metal-semiconductor-metal solar-blind ultraviolet photodetector by asymmetric electrode structures

Cited by 10 publications

References 24 publications

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Ultraviolet photodetectors based on wide bandgap oxide semiconductor films

Asymmetric semicircular and triangular electrode structures to increase photo-to-dark-current ratio in MgZnO metal semiconductor metal photodetectors

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