Data Storage Studies on Nanowire Transistors with Self-Assembled Porphyrin Molecules

Li, Chao; Ly, James; Lei, Bo; Fan, Wendy; Zhang, Daihua; Han, Jie; Meyyappan, M.; Thompson, Mark E.; Zhou, Chongwu

doi:10.1021/jp0498421

Cited by 111 publications

(95 citation statements)

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“…[7] The modification of conducting surfaces at the molecular level with redoxactive ''building blocks'' constitutes a powerful approach to the fabrication of such materials, particularly when the goal is integrated systems devoted to information storage or transfer. [8][9][10] For such applications, technologically relevant semiconducting surfaces, such as doped silicon, constitute particularly attractive substrates; indeed, silicon surfaces covalently derivatized with reversible redox-center-terminated organic monolayers [1,2,8,[11][12][13][14] have recently been prepared and examined to determine if molecular memories could result from such hybrid junctions. In parallel with these seminal studies, there have been relevant developments with redoxactive carbon-rich group 8 organometallics.…”

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confidence: 99%

Silicon Surface‐Bound Redox‐Active Conjugated Wires Derived From Mono‐ and Dinuclear Iron(II) and Ruthenium(II) Oligo(phenyleneethynylene) Complexes

et al. 2008

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Functional molecular materials are playing an everincreasing role in the fabrication of smart integrated devices that can perform inter alia logic operations. [1][2][3][4][5][6] As a result, the nano-engineering of molecular systems on surfaces has recently become a major focus of activity in the design and tailored construction of innovative materials. [7] The modification of conducting surfaces at the molecular level with redoxactive ''building blocks'' constitutes a powerful approach to the fabrication of such materials, particularly when the goal is integrated systems devoted to information storage or transfer. [8][9][10] For such applications, technologically relevant semiconducting surfaces, such as doped silicon, constitute particularly attractive substrates; indeed, silicon surfaces covalently derivatized with reversible redox-center-terminated organic monolayers [1,2,8,[11][12][13][14] have recently been prepared and examined to determine if molecular memories could result from such hybrid junctions. In parallel with these seminal studies, there have been relevant developments with redoxactive carbon-rich group 8 organometallics. These compounds are ideal candidates for reversible charge storage at the molecular level, [15][16][17][18][19][20] and recently Fehlner, Blum, and Rigaut have independently established that both homo-and heteropolynuclear representatives of this class of molecules can be anchored on conducting silicon [9,10] or gold [21,22] interfaces.The studies of bundles/monolayers on gold have revealed far better conduction through these organometallic substrates than through purely organic analogues of similar length, [21,22] while the studies on silicon surfaces have shown that a given redox state of the immobilized molecules can be generated by application of a suitably chosen electrical potential to this hybrid junction. [9,10] In complementary studies in the field of optics, [23] we have recently demonstrated that electrochemical generation of the various redox congeners of the dinuclear Fe(II)/Ru(II) complex 1 (Scheme 1) [24] provides a means to modulate the linear and nonlinear optical properties of a solution of these compounds. Taken together, these developments strongly suggest that hybrid junctions incorporating such carbon-rich molecules offer significant potential for realization of a variety of molecule-based devices. In view of these stimulating prospects, we report herein (i) the successful covalent assembly of electron-rich mononuclear Fe(II) (2 1 -2 3 ) and dinuclear Fe(II)/Ru(II) acetylides (3; Scheme 1) on monocrystalline silicon surfaces following a new and straightforward approach; and (ii) preliminary results defining the facile electron transfer between the semiconducting silicon surface and the immobilized redox-active molecules.To functionalize the silicon surface, we extended the hydrosilylation route developed for purely organic terminal alkynes [25] to organometallic substrates possessing a terminal alkyne moiety. Thus, solutions of the complexes 2 0 -2 3 [26] (...

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confidence: 99%

Silicon Surface‐Bound Redox‐Active Conjugated Wires Derived From Mono‐ and Dinuclear Iron(II) and Ruthenium(II) Oligo(phenyleneethynylene) Complexes

et al. 2008

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“…The feasibility of a 1Mbit hybrid (molecule on CMOS platform) DRAM has been demonstrated that uses 1/10 th of the capacitor area of conventional technology [115]. Moreover, the same principle works with semiconducting nanowires dressed with redox molecules in a transistor configuration [116][117][118]. Optoelectronic memories have also been demonstrated with polymer-functionalized CNT transistors [119,120].…”

Section: A Charge-based Memorymentioning

confidence: 99%

Molecular Nanoelectronics

Vuillaume

2010

Proc. IEEE

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Abstract-Molecular electronics is envisioned as a promising candidate for the nanoelectronics of the future. More than a possible answer to ultimate miniaturization problem in nanoelectronics, molecular electronics is foreseen as a possible way to assemble a large numbers of nanoscale objects (molecules, nanoparticules, nanotubes and nanowires) to form new devices and circuit architectures. It is also an interesting approach to significantly reduce the fabrication costs, as well as the energetical costs of computation, compared to usual semiconductor technologies. Moreover, molecular electronics is a field with a large spectrum of investigations: from quantum objects for testing new paradigms, to hybrid molecular-silicon CMOS devices. However, problems remain to be solved (e.g. a better control of the molecule-electrode interfaces, improvements of the reproducibility and reliability, etc…).

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“…However, scaling techniques currently employed will soon reach physical and technical limitations [1] and alternative methods are now being investigated. One such method is molecular electronics which has been proposed to circumvent the limitations associated with current semiconductor devices allowing for scaling down to the molecular level [2] whilst dramatically decreasing the associated cost [1]. A promising approach within the field of molecular electronics is the use of single-walled carbon nanotubes as electronic interconnects [3,4].…”

Section: Introductionmentioning

confidence: 99%