DC I-V characteristics and RF performance of a 4H-SiC JFET at 773 K

Hatfield, C.W.; Bilbro, Griff L.; Allen, Scott T.; Palmour, John W.

doi:10.1109/16.711376

Cited by 8 publications

(4 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Compact equivalent circuit models are suitable for simulating HFET circuits, but not before the HFET devices have been fabricated. Twodimensional solvers can predict the dc I-V characteristics of an HFET and even its small-signal RF parameters, but they are difficult to employ in real time within a harmonic balance circuit simulator since run-time interpolation of a database of precomputed solutions is cumbersome [17,18]. Compact physics-based models, however, can run in harmonic balance solvers because they are analytic and therefore sufficiently efficient in computation time requirements that they can predict the operation of an RF HFET under large-signal RF drive conditions.…”

Section: Introductionmentioning

confidence: 99%

Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs

Hou

Bilbro

Trew

2012

Active and Passive Electronic Components

View full text Add to dashboard Cite

We have developed a new, zone-based compact physics-based AlGaN/GaN heterojunction field-effect transistor (HFET) model suitable for use in commercial harmonic-balance microwave circuit simulators. The new model is programmed in Verilog-A, an industry-standard compact modeling language. The new model permits the dc, small-signal, and large-signal RF performance for the transistor to be determined as a function of the device geometric structure and design features, material composition parameters, and dc and RF operating conditions. The new physics-based HFET model does not require extensive parameter extraction to determine model element values, as commonly employed for traditional equivalent-circuit-based transistor models. The new model has been calibrated and verified. We report very good agreement between simulated and measured dc and RF performance of an experimental C-band microwave power amplifier.

show abstract

Section: Introductionmentioning

confidence: 99%

Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs

Hou

Bilbro

Trew

2012

Active and Passive Electronic Components

View full text Add to dashboard Cite

show abstract

“…Because, for the same device current rating, SiC die are much smaller than their Si counterparts, their device capacitance will also be smaller [13]. The reduction in capacitance to be expected using SiC FETs compared to using Si FETs will be largest for high voltage rated devices.…”

Section: Estimate the Capacitance Andmentioning

confidence: 95%

“…If it is assumed that the SiC and Si power diodes have the same forward voltage drop (this assumes that their power losses are equal), their specific power loss is (13) Here, is the rated forward voltage drop, and is the rated forward current. Combining (13) with (11) gives the allowed current density in the power device (14) Thus, for SiC and Si diodes with the same forward voltage drops and same temperature rises, the ratio of their maximum current densities is (15) This is also the ratio of the Si device area to the SiC device area. Thus, if there is 100 A/cm in a Si PIN diode, there could be 313 A/cm in a SiC Schottky diode.…”

Section: Estimate the Capacitance Andmentioning

confidence: 98%

A 1-MHz hard-switched silicon carbide DC–DC converter

Abou-Alfotouh¹,

Radun

Chang

et al. 2006

IEEE Trans. Power Electron.

View full text Add to dashboard Cite

Silicon Carbide (SiC) is a wide bandgap semiconductor material that offers performance improvements over Si for power semiconductors with accompanying benefits for power electronics applications that use these semiconductors. The wide bandgap of SiC results in higher junction forward voltage drops, so SiC is best suited for majority carrier devices such as field effect transistors (FETs) and Schottky diodes. The wide bandgap of SiC results in it having a high breakdown electric field, which in turn results in lower resistivity and narrower drift regions in power devices. This dramatically lowers the resistance of the drift region and means that SiC devices with substantially less area than their corresponding Si devices can be used. The lower device area reduces the capacitance of the devices enabling higher frequency operation. Here, the results from a 1-MHz hard-switched dc-dc converter employing SiC JFETs and Schottky diodes will be presented. This converter was designed to convert 270 Vdc to 42 Vdc such as may be needed in future electric cars. The results provide the performance obtained at 1 MHz and demonstrate the feasibility of a hard-switched dc-dc converter operating at this frequency.

show abstract

“…The advantages of SiC SBDs in power converter circuits have been reported in some papers [14][15][16][17][18][19][20] ; e.g., no reverse recovery current, no temperature influence on the switching behavior, no forward recovery, fast switching, and so on. Various types of controllable switching devices have been proposed, but they are currently under development; e.g., MOSFET, bipolar transistor, thyristor, GTO and so on [21][22][23][24][25][26] . SiC JFETs are expected to be the first commercial transistor available in this technology [27][28][29][30] .…”

Section: Introductionmentioning

confidence: 99%

Characterization of SiC JFET for temperature dependent device modeling

Funaki

Kashyap

Mantooth

et al. 2006

2006 37th IEEE Power Electronics Specialists Conference

View full text Add to dashboard Cite

Silicon Carbide (SiC) is considered the wide band gap semiconductor material that can presently compete with silicon (Si) material for power switching devices. Compact circuit simulation models for SiC devices are of utmost importance for designing and analyzing converter circuits; in particular, if comparisons with Si devices will be performed. The SiC power switching device structure and composition inevitably differs from those of conventional Si devices so as to harness the superiority of the material. The operational characteristics of the device thus are different from those of conventional Si devices. These characteristics cannot be accurately predicted by current Si power device models. Hence, the motivation to develop circuit simulation models for SiC devices. Moreover, SiC transistors have not been characterized as thoroughly as diodes. This paper characterizes SiC JFETs for the purpose of modeling and parameter extraction which can then be utilized in circuit simulations. The characterization is based on the dc (current-voltage) characteristic measurements using a curve tracer and on the ac (capacitance [impedance] -voltage) measurements using an impedance analyzer. Noting that characterization data for SiC JFETs are only available up to an ambient temperature of 250 o C, the device is characterized from room temperature to 450 o C demonstrating the high temperature operation of SiC JFETs. To this end, the devices were packaged in dedicated high temperature packages, and measurement fixtures were specially fabricated to withstand high ambient temperatures. The body diode buried in the evaluated SiC JFET is also characterized for potential synchronous rectifier applications.I.

show abstract

DC I-V characteristics and RF performance of a 4H-SiC JFET at 773 K

Cited by 8 publications

References 3 publications

Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs

Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs

A 1-MHz hard-switched silicon carbide DC–DC converter

Characterization of SiC JFET for temperature dependent device modeling

Contact Info

Product

Resources

About