Decay time of the blue luminescence in ZnSe at room temperature

Zheng, Jia Zhen; Allen, J. W.; Spence, D. E.; Sleat, W. E.; Sibbett, W.

doi:10.1063/1.108820

Cited by 19 publications

(10 citation statements)

References 14 publications

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“…Detailed investigations of the carrier relaxation dynamics in the ZnSe NW system are far and few between. For example, the intrinsic exciton lifetimes, exciton oscillator strengths and the exciton‐phonon interactions in this quasi 1D nanoscale system remain relatively unknown . A clear understanding of the carrier dynamics in light of the various competing radiative and non‐radiative pathways is essential for optimizing the optoelectronic properties of ZnSe NWs.…”

Section: Introductionmentioning

confidence: 99%

“…Herein, we seek to elucidate the intrinsic carrier recombination dynamics and the influence of the exciton‐phonon interactions on the recombination dynamics in ZnSe NWs through a comprehensive pump‐fluence and temperature dependent time‐resolved PL (TRPL) study using two‐photon excitation (TPE). TRPL is a powerful nondestructive probe of the carrier dynamics and their relaxation pathways in semiconductor nanostructures . Near‐infrared TPE affords us the means to uniformly excite the carriers throughout the NWs.…”

Section: Introductionmentioning

confidence: 99%

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Ultrafast Exciton Dynamics and Two‐Photon Pumped Lasing from ZnSe Nanowires

Xing

Luo

et al. 2013

Advanced Optical Materials

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The carrier recombination dynamics in ZnSe nanowires (NWs) remain poorly understood despite more than a decade of research since their inception in 2001. Herein, through a comprehensive pump fluence‐ and temperature‐dependent two‐photon excitation (TPE) study, a clear picture of the carrier relaxation pathways, intrinsic lifetimes, exciton oscillator strengths, and exciton‐phonon interactions is presented for this NW system. Contrary to a common perception that the higher pump intensities needed to achieve two‐photon‐excited photoluminescence correspond to a higher exciton density threshold (nth) for two‐photon pumped lasing, it is found that a much lower nth is needed to achieve lasing with TPE compared to single‐photon excitation (SPE) of the same ZnSe NWs. This measurement is further supported by the greatly enhanced lasing action photostability characteristics of the ZnSe NWs under TPE. These findings have significant implications on the design and the tailoring of the optoelectronic properties of nanowire lasers.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ultrafast Exciton Dynamics and Two‐Photon Pumped Lasing from ZnSe Nanowires

Xing

Luo

et al. 2013

Advanced Optical Materials

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“…The emission spectrum of the bare ZnSe single crystal (excited at 480 nm) show a maximum at 600 nm. As indicated by its short (picosecond) lifetime,27–30 this emission represents fluorescence. The emission spectra of the two other systems are red‐shifted compared with that of ZnSe and both show a maximum near 630 nm.…”

Section: Resultsmentioning

confidence: 99%

Polythiophenes Containing Oligo(oxyethylene) Side Chains as a Thin Film on a ZnSe Single Crystal Surface

Beek

Jenneskens

Zdravkova

et al. 2005

Macro Chemistry & Physics

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Summary: Two polythiophenes, containing either one (PTT) or two (PBTT) 2,5,8‐trioxanonyl side chains per repeating unit, were synthesized with the objective of developing hybrid inorganic/organic semiconductor systems. From absorption and fluorescence spectroscopy and cyclic voltammetry it appears that introduction of a second 2,5,8‐trioxanonyl side chain on a repeating unit leads to a very short conjugation length. Atomic Force Microscopy (AFM) performed on composites of the two polythiophenes and a ZnSe single crystal reveals excellent wetting of the crystal by the polymers, leading to the formation of thin films. For the PTT/ZnSe composite, good contact between the constituents is substantiated by a red‐shift of the PTT absorption relative to that of PTT on quartz. Fluorescence measurements indicate the occurrence of energy transfer from ZnSe to PTT, which might imply that there is electronic contact between ZnSe and PTT. Because of its highly distorted backbone, neither a significant red‐shift compared with a film on quartz nor excitation energy transfer was found for the thin film of PBTT deposited on ZnSe. Nevertheless, it is shown that the presence of polar 2,5,8‐trioxanonyl side chains guarantees strong binding of polythiophenes to the ZnSe surface.

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“…However, to the best of our knowledge, there has been only one report 1 of a diffusion length for excited carriers in CdZnSe quantum wells employed in II-VI based blue-green laser diodes, although carrier diffusion lengths for bulk or thin films ZnSe and CdSe have been reported by many research groups. [2][3][4][5][6][7][8] Logue et al 1 reported a room temperature diffusion length of 0.498 nm for a 6 nm Cd x Zn 1Ϫx Se quantum well with x Cd ϭ0.25 from spatial imaging laser-excited quantum well ͑QW͒ luminescence. Reported diffusion lengths for bulk and thin film samples scatter, depended upon the sample used.…”

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confidence: 99%

Diffusion lengths of excited carriers in CdxZn1−xSe quantum wells

Liu

Cargill

Snoeks

et al. 1999

Applied Physics Letters

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Diffusion lengths of excited carriers in a Cd x Zn 1Ϫx Se multiple quantum well structure were determined for temperatures between room temperature and 8 K from cathodoluminescence measurements. The diffusion length was found to depend upon temperature and Cd concentration of the quantum well. For the highest Cd concentration (xϭ0.43), the diffusion length increased with temperature up to 225 K and then dropped at higher temperatures. Diffusion lengths were 0.21 m at 8 K, 0.38 m at 225 K, and 0.24 m at room temperature. For the well with least Cd concentration (xϭ0.24), longer diffusion lengths were obtained. The nature of the diffusing carriers is also discussed.

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Decay time of the blue luminescence in ZnSe at room temperature

Cited by 19 publications

References 14 publications

Ultrafast Exciton Dynamics and Two‐Photon Pumped Lasing from ZnSe Nanowires

Ultrafast Exciton Dynamics and Two‐Photon Pumped Lasing from ZnSe Nanowires

Polythiophenes Containing Oligo(oxyethylene) Side Chains as a Thin Film on a ZnSe Single Crystal Surface

Diffusion lengths of excited carriers in CdxZn1−xSe quantum wells

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