Decomposition and electro-physical model creation of the CREE 1200V, 50A 3-Ph SiC module

Morgan, Adam J.; Yang, Xu; Hopkins, Douglas C.; Husain, Iqbal; Yu, Wensong

doi:10.1109/apec.2016.7468163

Cited by 15 publications

(2 citation statements)

References 8 publications

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“…In this paper, a thermal model was obtained by FEM simulation, aiming to estimate the junction temperature for the power devices in SiC power module [11], [12]. Based on this method, estimation of the junction temperature can be realized by the NTC sensor reading and the thermal network between the chips and NTC.…”

Section: Introductionmentioning

confidence: 99%

Online Junction Temperature Estimation Method for SiC Modules With Built-in NTC Sensor

et al. 2019

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Silicon carbide (SiC) devices characterized by high efficiency, high power density and wide bandgap, have great potential in many advanced applications, such as electric automotive, aviation and military. Thermal management, condition monitoring and life estimation of SiC modules are essential to achieve high reliability. These control techniques require realtime monitoring or estimation of the module's junction temperature. This paper proposed a thermal model based on an integrated negative thermal coefficient (NTC) thermistor in SiC modules. The Finite Element Methods simulation results showed that the parameters of the thermal model are invariant under different heat dissipation conditions and ambient temperatures. The combination of the proposed thermal model with the reading of NTC sensor realized the online estimation of the junction temperature. The accuracy of the thermal model and the independence of thermal impedance were verified by simulation and experimental results.

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Section: Introductionmentioning

confidence: 99%

Online Junction Temperature Estimation Method for SiC Modules With Built-in NTC Sensor

et al. 2019

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“…Since the characteristics of SiC dies are quite different from the Si-based devices in terms of smaller dies, higher temperature tolerance and higher switching frequency, the conventional package techniques developed for Si-based semiconductor inevitably bring new obstacles to SiC dies [3]. With the advantages of mature package techniques and low cost, the conventional wire-bonded packages are usually employed in the existing commercial SiC power modules [4]- [7]. Hence, how to evaluate the reliability level for the combination of emerging SiC dies and the conventional wire-bonded package becomes a real problem.…”

Section: Introductionmentioning

confidence: 99%

Study of Current Density Influence on Bond Wire Degradation Rate in SiC MOSFET Modules

Luo

Iannuzzo

Baker

et al. 2020

IEEE J. Emerg. Sel. Topics Power Electron.

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Design methodology for a planarized high power density EV/HEV traction drive using SiC power modules

Rahman

Morgan

Yang

et al. 2016

2016 IEEE Energy Conversion Congress and Exposition (ECCE)

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Decomposition and electro-physical model creation of the CREE 1200V, 50A 3-Ph SiC module

Cited by 15 publications

References 8 publications

Online Junction Temperature Estimation Method for SiC Modules With Built-in NTC Sensor

Online Junction Temperature Estimation Method for SiC Modules With Built-in NTC Sensor

Study of Current Density Influence on Bond Wire Degradation Rate in SiC MOSFET Modules

Design methodology for a planarized high power density EV/HEV traction drive using SiC power modules

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