2021
DOI: 10.1103/physrevb.103.075436
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Decoupled strain response of ferroic properties in a multiferroic VOCl2 monolayer

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Cited by 12 publications
(20 citation statements)
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“…Note that the V ion polar displacement is directly correlated to the in-plane ferroelectric polarization in the VOXY monolayers, and thus an increase (decrease) in polar displacement results in an increase (decrease) in ferroelectric in-plane polarization. Similar results have also been observed for VOF 2 monolayer and for VOCl 2 monolayer, where VOF 2 shows a similar phase transition from FM to an AFM magnetic ordering on applying compressive strain and VOCl 2 shows a transition from AFM3 to FM ordering on applying tensile strain, with increase in ferroelectric polarization with tensile strain along the polar axis for both VOCl 2 and VOF 2 monolayers.…”
Section: Resultssupporting
confidence: 83%
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“…Note that the V ion polar displacement is directly correlated to the in-plane ferroelectric polarization in the VOXY monolayers, and thus an increase (decrease) in polar displacement results in an increase (decrease) in ferroelectric in-plane polarization. Similar results have also been observed for VOF 2 monolayer and for VOCl 2 monolayer, where VOF 2 shows a similar phase transition from FM to an AFM magnetic ordering on applying compressive strain and VOCl 2 shows a transition from AFM3 to FM ordering on applying tensile strain, with increase in ferroelectric polarization with tensile strain along the polar axis for both VOCl 2 and VOF 2 monolayers.…”
Section: Resultssupporting
confidence: 83%
“…The difference in vanadium–oxygen bond lengths (V–O1 and V–O2) in each VOXY monolayer provides the polar displacement of the V ion along the in-plane polar axis ( a -axis), shown in Table S1. The V ion polar displacement is responsible for in-plane ferroelectricity in these systems, similar to their parent VOX 2 monolayers . The X–V–X bond angle is larger than the Y–V–Y bond angle due to higher repulsion among halogen atoms with higher electronegativity.…”
Section: Resultsmentioning
confidence: 80%
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“…These include electronics [1][2][3][4] , energy storage 5 , transport 4,6,7 , optoelectronics [8][9][10] , sensors [11][12][13][14][15] , catalysis [16][17][18][19] and magnetism [20][21][22][23][24][25] . Among 2D materials 20,21,[25][26][27][28][29][30][31][32][33][34][35] , 2D magnets are highly desirable for use in modern spintronics and data storage devices. In non-magnetic 2D materials, extrinsic magnetic ordering can be induced via doping [36][37][38][39] , defect engineering 40,41 , proximity effect 42,43 , or strain engineering 44 .…”
Section: Introductionmentioning
confidence: 99%
“…Currently, 2D MOX 2 (M: transition metal; X: F, Cl, Br, and I) monolayers have been well studied because of their intrinsic excellent physical properties. 14–16 Ferroelectric (FE) distortion occurs along the a -axis as a result of strong electron–phonon interactions, which not only allow ferroelectricity and ferromagnetism to coexist in the VOX 2 monolayer, 17–21 but also enable electric-field switching of magnetic topological charge through the mediation of coupled polarization and Dzyaloshinskii–Moriya interactions. 22 Furthermore, NbOI 2 has been found to have a spin texture controlled by ferroelectric switching, 23 peculiar optical properties, 24,25 and the highest in-plane piezoelectric stress coefficient among 2D materials, allowing for highly efficient electrical–mechanical energy conversion.…”
Section: Introductionmentioning
confidence: 99%