2018
DOI: 10.1088/1361-6668/aaa8b9
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Decoupling of critical temperature and superconducting gaps in irradiated films of a Fe-based superconductor

Abstract: We report on direct measurements of the energy gaps (carried out by means of point-contact Andreev reflection spectroscopy, PCARS) and of the critical temperature in thin, optimally doped, epitaxial films of BaFe 2 (As 1−x P x ) 2 irradiated with 250-MeV Au ions. The low-temperature PCARS spectra (taken with the current flowing along the c axis) can be fitted by a modified Blonder-Tinkham-Klapwijk (BTK) model with two nodeless gaps; this is not in contrast with the possible presence of node lines suggested by … Show more

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Cited by 7 publications
(6 citation statements)
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“…The number and symmetry of the SC energy gaps were determined via directional PCARS [27][28][29][30][31] in crystals with x = 0 and x = 0.05. Fig.…”
Section: Directional Point-contact Andreev-reflection Spectroscopymentioning
confidence: 99%
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“…The number and symmetry of the SC energy gaps were determined via directional PCARS [27][28][29][30][31] in crystals with x = 0 and x = 0.05. Fig.…”
Section: Directional Point-contact Andreev-reflection Spectroscopymentioning
confidence: 99%
“…Prior to fitting, the experimental dI/dV curves need to be normalized, i.e. divided by the normal-state differential conductance curve [27,30,31]. In principle, the dI/dV spectrum recorded at a given T < Tc should be divided by the normal-state conductance at the same temperature, obtained by suppressing superconductivity with, e.g., a magnetic field.…”
Section: Pcars Measurementsmentioning
confidence: 99%
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“…This may occur due to the introduction of extra scattering centers via the accumulation of ions at the film surface, an issue which is well-documented across a wide range of different materials [47][48][49][50][64][65][66][67][68]. However, in this case we expect this contribution to be negligible, since the width of the resistive transition of BaFe 2 (As,P) 2 is known to be very robust against the introduction of extrinsic disorder, both in the case of single-crystals [69] and epitaxial thin films [25,70]. More importantly, the scaling of ∆R/R ′ with ∆n 2D in the normal state indicates that disorder is more efficiently introduced by hole doping with respect to electron doping: therefore, if the broadening of the resistive transition was dominated by gate-induced disorder, one should observe a larger broadening upon hole doping and a smaller broadening upon electron doping.…”
Section: Resultsmentioning
confidence: 98%
“…[27] Point contact Andreev-reflection (PCAR) spectroscopy measurement on BaFe2(As1−𝑥P𝑥)2 thin film with a 𝑇c ≃ 30 K have provided evidence for the possible presence of nodeless gap. [28] What is more, addition of disorder/impurity can lift the nodes in nodal s-wave SCs, [29] leading to a nodal-nodeless gap structure transition in the vicinity of a quantum critical point in BaFe2(As1−𝑥P𝑥)2. [30,31] These studies with different conclusions reflect the complexity of the system, and systematic investigations on high-quality samples using different techniques are highly desired.…”
mentioning
confidence: 99%