1996
DOI: 10.1063/1.363128
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Deep-center hopping conduction in GaN

Abstract: Molecular-beam-epitaxial GaN layers change from strongly conductive ͑ Ӎ 10 Ϫ2 ⍀ cm at 300 K͒ to semi-insulating ͑ Ӎ 10 6 ⍀ cm͒ as the N flux is increased. Layers grown at low fluxes show strong n-type conduction, with transport in the conduction band at high temperatures and in a shallow donor band at low temperatures. For layers grown at high N fluxes, the Hall coefficients become too small to measure, suggesting hopping conduction among deep centers. The temperature-dependent resistivity data are most consis… Show more

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Cited by 100 publications
(80 citation statements)
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“…All these values are evidently higher than the reported values of 0.016 and 0.11 eV for similarly resistive MBE GaN. 1 Recently the preparation of high resistive n-GaN layers by implantation with various ions has been reported and defect levels of 0.20-0.49 eV, evaluated from the vs 1/T dependence, have been found. 10 Our data are in good agreement with this result, what indicates that donor-like defects play a dominant role in the conduction mechanism in the samples investigated.…”
Section: ͓S0003-6951͑00͒02825-4͔contrasting
confidence: 40%
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“…All these values are evidently higher than the reported values of 0.016 and 0.11 eV for similarly resistive MBE GaN. 1 Recently the preparation of high resistive n-GaN layers by implantation with various ions has been reported and defect levels of 0.20-0.49 eV, evaluated from the vs 1/T dependence, have been found. 10 Our data are in good agreement with this result, what indicates that donor-like defects play a dominant role in the conduction mechanism in the samples investigated.…”
Section: ͓S0003-6951͑00͒02825-4͔contrasting
confidence: 40%
“…1,5 When the concentrations of the autodoping centers and the deep defects are comparable, the layer becomes highly resistive and conduction by hopping among deep centers might occur. Additional models taking into account scattering on charged dislocations resulting in reduced mobility have been proposed.…”
Section: ͓S0003-6951͑00͒02825-4͔mentioning
confidence: 99%
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“…Note that the very low mobility observed in HR GaN, generally associated with a deep-defect hopping conductivity mechanism, 21 is appropriate only for thermally generated carriers. The mobility of photoexcited carriers would be expected to be closer to that measured in the n-type layer.…”
Section: Carrier Dynamicsmentioning
confidence: 99%