Deep Dry Etching Patterned Silicon Using GeSbSnOx Thermal Lithography Photoresist

Lin, Yu–Hsuan; Yang, C. C.; Yang, Chin-Tien; Chen, Shiwei; Chu, Chin-Ming; Chiang, Donyau

doi:10.1109/tmag.2010.2099110

Cited by 10 publications

(4 citation statements)

References 10 publications

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“…Folate binding protein (FBP) was immobilized on the sensor chip surface as a model receptor for FAR overexpressed on a tumor cell. [18c,19c,25] The FBP model surface was prepared following a standard EDC/NHS‐based amide coupling method[18c] at a protein density of 13.1 ng mm −2 (response unit (RU) = 13090; Figure S6, Supporting Information). This FBP density is equivalent to a number density of ≈2.6 × 10 11 FBP molecules per mm 2 , comparable to the density of FAR overexpressed in several malignant cell lines including ovarian and endometrial cancers (≈10 10 –10 11 receptor molecules per mm 2 ).…”

Section: Resultsmentioning

confidence: 99%

“…The modular nanostructure also carries a drug payload through covalent attachment to the UCN core, rather than to the dendrimer shell—the latter of which has been used in our earlier methods for dendrimer‐based drug delivery. [9,18a,25] The rationale for this site of drug conjugation relates to receptor binding avidity and drug release kinetics which are described below. However, FA was attached to the dendrimer shell because of its well validated platform capacity for tight and selective FAR binding via multivalency,[18c] and also because of the greater surface accessibility of FAR to the FA on the dendrimer as compared to presentation on the inner UCN surface.…”

Section: Introductionmentioning

confidence: 99%

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Modular Integration of Upconverting Nanocrystal–Dendrimer Composites for Folate Receptor‐Specific NIR Imaging and Light‐Triggered Drug Release

Wong

Chen

Tang

et al. 2015

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Upconversion nanocrystals (UCNs) display near-infrared (NIR)-responsive photoluminescent properties for NIR imaging and drug delivery. The development of effective strategies for UCN integration with other complementary nanostructures for targeting and drug conjugation is highly desirable. This study reports on a core/shell-based theranostic system designed by UCN integration with a folate (FA)-conjugated dendrimer for tumor targeting and with photocaged doxorubicin as a cytotoxic agent. Two types of UCNs (NaYF4:Yb/Er (or Yb/Tm); diameter = ≈50 to 54 nm) are described, each displaying distinct emission properties upon NIR (980 nm) excitation. The UCNs are surface modified through covalent attachment of photocaged doxorubicin (ONB-Dox) and a multivalent FA-conjugated polyamidoamine (PAMAM) dendrimer G5(FA)6 to prepare UCN@(ONB-Dox)(G5FA). Surface plasmon resonance experiments performed with G5(FA)6 dendrimer alone show nanomolar binding avidity (KD = 5.9 × 10(-9) M) to the folate binding protein. This dendrimer binding corresponds with selective binding and uptake of UCN@(ONB-Dox)(G5FA) by FAR-positive KB carcinoma cells in vitro. Furthermore, UCN@(ONB-Dox)(G5FA) treatment of FAR(+) KB cells inhibits cell growth in a light dependent manner. These results validate the utility of modularly integrated UCN-dendrimer nanocomposites for cell type specific NIR imaging and light-controlled drug release, thus serving as a new theranostic system.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modular Integration of Upconverting Nanocrystal–Dendrimer Composites for Folate Receptor‐Specific NIR Imaging and Light‐Triggered Drug Release

Wong

Chen

Tang

et al. 2015

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“…The organic photoresist used in DPCL is SU8 and its process parameters are well-documented 17 . The inorganic photoresist is a metal oxide containing Ge, Sb, O and Sn, but the material properties are only partially understood 18,19 . We report here the thermal properties of the oxide photoresist, the surface morphology of the photoresist structure by the direct laser writing, and the effects of the variables in the ICP-RIE process on PSS etching.…”

Section: Introductionmentioning

confidence: 99%

Dual photoresist complimentary lithography technique produces sub-micro patterns on sapphire substrates

Chang¹,

Tseng²,

Lee³

et al. 2014

SPIE Proceedings

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Dual photoresist complimentary lithography technique consisting of inorganic oxide photoresist and organic photoresist is applied to produce the sub-micro pit patterns on a sapphire surface. The oxide photoresist is patterned by the direct laser writing and the developed mark size decreases to a smaller value than the laser spot size due to the thermal lithography. The small developed pit diameter is one of the advantages using oxide photoresist. The oxide photoresist possesses strong etching resistance against the oxygen plasma but shows no resistance against the chlorine plasma. The chlorine plasma is a necessary component to etch the sapphire during the ion-coupled-plasma reactive-ion-etching process because of sapphire's mechanical hardness and chemical stability. However, the characteristics of organic resist SU8 are opposite to that of oxide photoresist and possess moderate resistance against chlorine plasma but show no resistance to oxygen plasma. The thermal and developing characteristics of oxide photoresist are reported here. The dependence of the laser power on the developed mark sizes and morphologies is illustrated by atomic force microscopy. The temperature distribution on the photoresist structure during the laser writing is simulated. Images of patterned pits on the large commercial sapphire substrates are also shown.

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“…1 The resulting PSS size is within 2 to 5 μm because of the optical resolution limitation applied in photolithography. 18,19 We first applied laser writing on the oxide photoresist and developed it to generate the mark array of a diameter less than the laser spot due to thermal lithography. A dual-photoresist complementary lithographic (DPCL) technique with inorganic and organic photoresist combination is proposed to create the submicrometer pattern features on the PSS.…”

Section: Introductionmentioning

confidence: 99%

Dual-photoresist complementary lithography technique for the formation of submicron patterns on sapphire substrates

Chang

Tseng

Lee

et al. 2014

J. Micro/Nanolith. MEMS MOEMS

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Dual-photoresist complementary lithography technique consisting of inorganic oxide photoresist and organic photoresist is applied to produce the submicron pit array patterns on a sapphire surface. The oxide photoresist is patterned by direct laser writing, and the developed pit size decreases to a smaller value than the laser spot size due to the thermal lithography. The oxide photoresist possesses strong etching resistance against oxygen plasma but shows no resistance against chlorine plasma. During the ion-coupled-plasma reactive-ion-etching process, chlorine plasma is a necessary component to etch the sapphire. Moreover, the characteristics of organic resist are opposite those of oxide photoresist and possess moderate resistance against chlorine plasma but no resistance against oxygen plasma. The thermal and developing characteristics of oxide photoresist are reported in this study. The dependence of laser power on the developed mark sizes and morphologies is examined by atomic force microscopy. The temperature distribution on the photoresist structure during the laser writing is simulated, and the thermal lithography concept is introduced to explain the effect of power on the developed oxide mark width. Images of patterned pit array on a commercial 4-inch-diameter sapphire substrate are also shown. Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 05/15/2015 Terms of Use: http://spiedl.org/terms

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Deep Dry Etching Patterned Silicon Using GeSbSnOx Thermal Lithography Photoresist

Cited by 10 publications

References 10 publications

Modular Integration of Upconverting Nanocrystal–Dendrimer Composites for Folate Receptor‐Specific NIR Imaging and Light‐Triggered Drug Release

Modular Integration of Upconverting Nanocrystal–Dendrimer Composites for Folate Receptor‐Specific NIR Imaging and Light‐Triggered Drug Release

Dual photoresist complimentary lithography technique produces sub-micro patterns on sapphire substrates

Dual-photoresist complementary lithography technique for the formation of submicron patterns on sapphire substrates

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