2023
DOI: 10.1038/s41597-023-02004-6
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Deep learning based atomic defect detection framework for two-dimensional materials

Abstract: Defects to popular two-dimensional (2D) transition metal dichalcogenides (TMDs) seriously lower the efficiency of field-effect transistor (FET) and depress the development of 2D materials. These atomic defects are mainly identified and researched by scanning tunneling microscope (STM) because it can provide precise measurement without harming the samples. The long analysis time of STM for locating defects in images has been solved by combining feature detection with convolutional neural networks (CNN). However… Show more

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Cited by 11 publications
(3 citation statements)
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“…It can be used for testing in terms of deep defects in two-dimensional heterogeneous structures. 71 Although the STM method has excellent analytical performance, it is not sufficient for some applications due to its limited resolution.…”
Section: Characterization Methods For Defective 2d Nanomaterialsmentioning
confidence: 99%
“…It can be used for testing in terms of deep defects in two-dimensional heterogeneous structures. 71 Although the STM method has excellent analytical performance, it is not sufficient for some applications due to its limited resolution.…”
Section: Characterization Methods For Defective 2d Nanomaterialsmentioning
confidence: 99%
“…However, due to the strong nonlinear relationship between input and output caused by the high-level semantic concept of high-dimensional input represented by multiple targets, the soft sensor model cannot perform well in data prediction 24 . The study 25 proposes a deep learning-based atomic defect detection framework (DL-ADD) to efficiently detect atomic defects in molybdenum disulfide (MoS2) and generalize the model for defect detection in other TMD materials. A large-scale dataset of 3D solar magnetic fields of active regions is built by using the nonlinear force-free magnetic field (NLFFF) extrapolation from vector magnetograms of Helioseismic and Magnetic Imager (HMI) on the Solar Dynamics Observatory (SDO) 26 .…”
Section: Introductionmentioning
confidence: 99%
“…1,2) The inherent instability of surfaces caused by thermal motion, particularly at room temperature, can be exploited to manipulate dopant atoms on semiconductor surfaces. 3) This technique is expected to synergize with SPM automation techniques, such as the use of algorithms or machine learning (ML) for instrument operation, [4][5][6] thereby eliminating the need for manual intervention. Through the automated positioning of foreign atoms on a Si surface, this advancement holds the potential for achieving large-scale selective doping and bringing in a new era in the development of smaller and faster electronic devices.…”
mentioning
confidence: 99%