Deep-level defects and <i>n</i>-type-carrier concentration in nitrogen implanted GaN

Haase, D.; Schmid, M.; Kürner, W.; Dörnen, A.; Härle, V.; Scholz, Frank; Burkard, M.; Schweizer, H.

doi:10.1063/1.117727

Cited by 152 publications

(106 citation statements)

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“…3, is close to E 3 ͑0.665 eV͒ 3 and D3 ͑0.67 eV͒. 4 Trap B, peaked at ϳ335 K with E T ϭ0.62 eV and T ϭ7.4 ϫ10 Ϫ15 cm 2 , which is close to E 2 ͑0.58 eV͒, D2 ͑0.60 eV͒, and DLN 3 ͑0.59 eV͒ reported by Hacke et al, 3 Haase et al, 4 and Götz et al, 5 respectively, was also found 7 to be a dominant trap in both MOCVD and HVPE GaN layers, with trap densities from 1 to 2ϫ10 14 cm Ϫ3 . Trap D, peaked at ϳ160 K with E T ϭ0.24 eV and T ϭ2.0ϫ10 Ϫ15 cm 2 , which is close to E 1 ͑0.264 eV͒ 3 and DLN 1 ͑0.25 eV͒, 5 was also found 7 in both MOCVD and HVPE GaN, but with trap densities in the low-10 14 cm Ϫ3 .…”

Section: T Mmentioning

confidence: 64%

“…Based on the effects of 270-keV N 2ϩ implantation and annealing, Haase et al have suggested that two centers, D2 and D3, with activation energies of 0.60 and 0.67 eV, are the N antisite and N interstitial, respectively. 4 Recently, some of the present authors have reported an electron-irradiation-induced trap, located at E C -0.18 eV, in both MOCVD and HVPE GaN. This trap is most likely associated with the N vacancy.…”

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confidence: 59%

“…8, the crystal stoichiometry or the N richness of RMBE GaN films seems to be determined mainly by the growth temperature, rather than the ammonia flow rate. ͑Note that the ammonia cracking rate is strongly temperature dependent.͒ On the other hand, the dominance of trap B, which is close to trap D2, 4 in both MOCVD and HVPE GaN materials, implies that these materials are more N rich, since the center D2 has been tentatively identified to be related to the N-antisite defect, based on a study of N 2ϩ implantation and annealing, 4 as mentioned above.…”

Section: T Mmentioning

confidence: 99%

“…A number of deep centers in n-GaN, measured by deep-level transient spectroscopy ͑DLTS͒, with activation energies in the range of 0.15-0.8 eV and trap densities in the range of 10 13 -10 15 cm Ϫ3 , have been reported by several groups. [3][4][5] Most of the studies have so far dealt with n-GaN materials grown by either metalorganic chemical-vapor deposition ͑MOCVD͒ or hydride vapor-phase epitaxy ͑HVPE͒. The origin of the observed deep centers remains an open question.…”

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confidence: 99%

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Deep centers in n-GaN grown by reactive molecular beam epitaxy

Fang

Look

Kim

et al. 1998

Applied Physics Letters

144

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Deep centers in Si-doped n-GaN layers grown by reactive molecular beam epitaxy have been studied by deep-level transient spectroscopy as a function of growth conditions. Si-doped GaN samples grown on a Si-doped n+-GaN contact layer at 800 °C show a dominant trap C1 with activation energy ET=0.44 eV and capture cross-section σT=1.3×10−15 cm−2, while samples grown at 750 °C on an undoped semi-insulating GaN buffer show prominent traps D1 and E1, with ET=0.20 eV and σT=8.4×10−17 cm2, and ET=0.21 eV and σT=1.6×10−14 cm2, respectively. Trap E1 is believed to be related to a N-vacancy defect, since the Arrhenius signature for E1 is very similar to the previously reported trap E, which is produced by 1-MeV electron irradiation in GaN materials grown by both metalorganic chemical-vapor deposition and hydride vapor-phase epitaxy.

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Section: T Mmentioning

confidence: 64%

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confidence: 59%

Section: T Mmentioning

confidence: 99%

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confidence: 99%

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Deep centers in n-GaN grown by reactive molecular beam epitaxy

Fang

Look

Kim

et al. 1998

Applied Physics Letters

144

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“…In a later study, Fang et al suggested the peak to be related to the divacancy V N -V Ga . 18 The trap D3 at $Ec-0.60 eV has been previously reported 10,11,16,19,20 and one of the suggested defect models is the N antisite (N Ga ). 19 However, later studies of electronirradiated HVPE-grown GaN 21 ruled out the model of a simple intrinsic defect since no change of the concentration was observed after irradiation.…”

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confidence: 86%

Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy

Duc

Pozina

Són

et al. 2014

Applied Physics Letters

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Defects induced by electron irradiation in thick free-standing GaN layers grown by halide vapor phase epitaxy were studied by deep level transient spectroscopy. In as-grown materials, six electron traps, labeled D2 (E-C-0.24 eV), D3 (E-C-0.60 eV), D4 (E-C-0.69 eV), D5 (E-C-0.96 eV), D7 (E-C-1.19 eV), and D8, were observed. After 2MeV electron irradiation at a fluence of 1 x 10(14) cm(-2), three deep electron traps, labeled D1 (E-C-0.12 eV), D5I (E-C-0.89 eV), and D6 (E-C-1.14 eV), were detected. The trap D1 has previously been reported and considered as being related to the nitrogen vacancy. From the annealing behavior and a high introduction rate, the D5I and D6 centers are suggested to be related to primary intrinsic defects.

Funding Agencies|Swedish Research Council (VR); Swedish Energy Agency

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Effect of Isoelectronic In Doping on Deep Levels in GaN Grown by MOCVD

Cho

Kim

Hong

et al. 2001

phys. stat. sol. (b)

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We have investigated the effect of isoelectronic In doping on deep levels in GaN films grown by metalorganic chemical vapor deposition via deep level transient spectroscopy. Deep level E2 0.5 eV below the conduction band was observed in both undoped GaN and In-doped GaN. However, with increasing In mole flow rate, the trap concentration of E2 decreases sharply from 2.3 Â 10 14 to 2.27 Â 10 13 cm --3 , nearly an order of magnitude in reduction, comparing to undoped GaN. This might be due to the dislocation pinning and/or bending effect. Therefore, In doping in GaN growth can effectively decrease the dislocation density and suppress the formation of deep levels E2.

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Deep-level defects and n-type-carrier concentration in nitrogen implanted GaN

Cited by 152 publications

References 0 publications

Deep centers in n-GaN grown by reactive molecular beam epitaxy

Deep centers in n-GaN grown by reactive molecular beam epitaxy

Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy

Effect of Isoelectronic In Doping on Deep Levels in GaN Grown by MOCVD

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