Deep-level dominated rectifying contacts for n-type GaN films

Hall, Henry P.; Awaah, M. A.; Das, K.

doi:10.1002/pssa.200306748

Cited by 29 publications

(22 citation statements)

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“…[11][12][13][14] Lambort and Mark 15 have developed the single carrier SCL current model with the presence of a trap above the Fermi level. As the applied voltage is lower than the onset voltage for deviating from Ohmic behavior ͑i.e., V Ͻ V on as shown in Fig.…”

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confidence: 99%

Current transport studies of ZnO∕p-Si heterostructures grown by plasma immersion ion implantation and deposition

Chen

Ling

Fung

et al. 2006

Applied Physics Letters

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Rectifying undoped and nitrogen-doped ZnO∕p-Si heterojunctions were fabricated by plasma immersion ion implantation and deposition. The undoped and nitrogen-doped ZnO films were n type (n∼1019cm−3) and highly resistive (resistivity ∼105Ωcm), respectively. While forward biasing the undoped-ZnO∕p-Si, the current follows Ohmic behavior if the applied bias Vforward is larger than ∼0.4V. However, for the nitrogen-doped-ZnO∕p-Si sample, the current is Ohmic for Vforward<1.0V and then transits to J∼V2 for Vforward>2.5V. The transport properties of the undoped-ZnO∕p-Si and the N-doped-ZnO∕p-Si diodes were explained in terms of the Anderson model and the space charge limited current model, respectively.

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confidence: 99%

Current transport studies of ZnO∕p-Si heterostructures grown by plasma immersion ion implantation and deposition

Chen

Ling

Fung

et al. 2006

Applied Physics Letters

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“…In the high bias voltage which ranges from 0.7 to 1 V, I-V 2 , corresponding to a shallow trap square-law region, which is a classical characteristic of space charge limited current (SCLC). Space charge limited current conduction is typically observed in wide band gap semiconductors [35][36][37][38]. Lampert and Mark have developed the single carrier SCLC model with a trap present above the Fermi level [39].…”

Section: Resultsmentioning

confidence: 99%

P-type Ca doped SrCu2O2 thin film: Synthesis, optical property and photovoltaic application

Zhao

Dong

Fang

et al. 2012

Journal of Alloys and Compounds

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“…[27][28][29][30] Lambort and Mark 31 have developed the single carrier SCL current model with the presence of a trap above the Fermi level. As the applied voltage is lower than the onset voltage for deviating from Ohmic behavior i.e., V < V on (=1 V) [as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Pt/CdTe/Pt asymmetric nano-Schottky diodes from colloidal quantum dots

Khatei

Rao

2011

AIP Advances

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We have fabricated nano-Schottky diodes of CdTe QDs with platinum metal electrodes in metal-semiconductor-metal planar configuration by drop-casting. The observed high value of ideality factor (13.3) of the diode was possibly due to the presence of defects in colloidal QDs. We observed asymmetry and non-linear nature of I-V characteristics between forward and reverse directions, which has been explained in terms of size distributions of quantum dots due to coffee ring effect. Copyright 2011 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License.

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Deep-level dominated rectifying contacts for n-type GaN films

Cited by 29 publications

References 0 publications

Current transport studies of ZnO∕p-Si heterostructures grown by plasma immersion ion implantation and deposition

Current transport studies of ZnO∕p-Si heterostructures grown by plasma immersion ion implantation and deposition

P-type Ca doped SrCu2O2 thin film: Synthesis, optical property and photovoltaic application

Pt/CdTe/Pt asymmetric nano-Schottky diodes from colloidal quantum dots

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