P-type Ca doped SrCu2O2 thin film: Synthesis, optical property and photovoltaic application

Zhao, Yiping; Dong, Wen‐Kui; Fang, Xiaodong; Zhou, Yikai; Meng, Gang; Tao, Ruhua; Deng, Zanhong; Zhou, Shu; Dai, Songyuan

doi:10.1016/j.jallcom.2011.09.067

Cited by 11 publications

(8 citation statements)

References 39 publications

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“…26.98, 31.29, 33.68, 39.09, 50.66, 55.13, 56.77, and 68.58°, which correspond to the hkl reflections of (112), (103), (200), (211), (105), (312), (303), and (400); these correspondingly confirm the tetragonal phase (space group) in the presence of unreacted SrCO 3 and can be confirmed from space group of I 41/ amd (JCPDS no. 48-1514). − The XRD pattern shown in Figure a for TSCO shows a very similar peak spacing with 2θ angles ,,, of ca. 32.50, 35.65, 40.07, 52.45, 57.88, 58.03, and 72.70 representing the hkl replications for (103), (200), (211), (105), (312), (303), and (400), correspondingly.…”

Section: Resultsmentioning

confidence: 79%

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Solid-State Synthesis of Titanium-Doped Binary Strontium–Copper Oxide as a High-Performance Electrochemical Pseudocapacitive Electrode Nanomaterial

Barai

Roy

et al. 2021

Energy Fuels

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Ti-doped SrCu 2 O 2 (TSCO) is prepared using a solid-state chemical reaction and applied as electrochemical pseudocapacitors. Different characterization techniques have been applied to confirm the crystallinity of the prepared TSCO, including an electrochemical test of the synthesized electrode material; TSCO demonstrates specific capacities (C s ) of ca. 1167.6 and 661.8 F/g at a 5 mV s −1 scan rate and 0.02 A/g applied current density, respectively, which is greater than those of the undopped SCO. The increment of the specific capacity value can be explained by the insertion of Ti as doped material in the SCO, which simultaneously intensifies the rate of ion intercalation/deintercalation at the time of charging/discharging (CD). Even the cycling establishment for the TSCO is found to be excellent, and there is only a 4.4% decrease after 10 000 CD cycles. Therefore, TSCO will be highly useful to prepare an electrode able to achieve an immense performance for super capacitance energy storage applications.

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Section: Resultsmentioning

confidence: 79%

“…Figure c shows the plot of energy densities, E d , and power densities, P d , of the TSCO/CC electrode against the applied current density. These E d and P d values of the TSCO/CC electrode were summarized according to the following eqs and , respectively …”

Section: Resultsmentioning

confidence: 99%

Solid-State Synthesis of Titanium-Doped Binary Strontium–Copper Oxide as a High-Performance Electrochemical Pseudocapacitive Electrode Nanomaterial

Barai

Roy

et al. 2021

Energy Fuels

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“…Their results exhibited an improved V OC in comparison with devices made of NiO, due to the lower energy of the valence‐band edge of CuAlO 2 . Zhao et al reported the V OC of 140 mV and J SC of 0.072 mA cm −2 for Ca‐doped SrCu 2 O 2 /n‐Si heterojunction solar cell.…”

Section: Introductionmentioning

confidence: 99%

“…Inorganic p‐type transparent conductive oxides (TCOs) such as CuAlO 2 and SrCu 2 O 2 have been found to be good candidates to apply as a hole conductor in solar cells with appropriate valance and conduction band positions . Nattestad et al made a p‐type dye‐sensitized solar cell using CuAlO 2 ‐based electrodes.…”

Section: Introductionmentioning

confidence: 99%

Numerical Study of Cu₂O, SrCu₂O₂, and CuAlO₂ as Hole‐Transport Materials for Application in Perovskite Solar Cells

Shasti

Mortezaali

2019

Physica Status Solidi (a)

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Herein, the application of Cu2O, SrCu2O2, and CuAlO2 as the hole‐transport materials (HTMs) in perovskite solar cells (PVSCs) using solar cell capacitance simulator (SCAPS‐1D) software, is numerically investigated. The effects of various parameters such as the perovskite layer thickness, the defect density of perovskite and interfaces, acceptor density of HTM and valance band offset of HTM/perovskite interface on device performance are studied. According to the simulation outcomes, the SrCu2O2 and CuAlO2 known as p‐type transparent conductive oxide are introduced as promising HTMs for fabrication of highly stable and efficient PVSCs. The Cu2O‐based devices exhibit the low power‐conversion efficiency (PCE) of 17.38% whereas, compared with 2,2′,7,7′‐tetrakis‐(N,N‐di‐4‐methoxyphenylamino)‐9,9′‐spirobifluorene (Spiro‐OMeTAD)‐based devices (PCE = 19.23%), the SrCu2O2 and CuAlO2 based‐devices show an enhanced PCE of 19.67% and 19.82%, respectively, under the hole‐transport layer (HTL) side illumination. This improvement can be attributed to lower light absorption in the HTL for devices based on SrCu2O2 and CuAlO2 than Cu2O due to wider bandgap which is formed.

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“…However, TCOs such as ZnO 1−x , ZnO : In/Al/F/B/Ga, In 1−x Sn x O 3 and SnO 2 : F, Cd 2 SnO 4 are all n-type materials, there are only a few reports on p-type TCOs, such as delafossite oxides CuMO 2 , SrCu 2 O 2 , Ca 3 Co 4 O 9 and the newly reported Bi 2 Sr 2 Co 2 O y [2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Room temperature deposition of amorphous p-type CuFeO2 and fabrication of CuFeO2/n-Si heterojunction by RF sputtering method

et al. 2016

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Transparent conducting amorphous p-type CuFeO 2 (CFO) thin film was prepared by radio-frequency (RF) magnetron sputtering method at room temperature using polycrystalline CuFeO 2 target. Amorphous structure of as-deposited film was confirmed by XRD. XPS analysis convinced that the chemical state of Cu + and Fe 3+ in the film, and the chemical composition of the thin films is close to the stoichiometry of CuFeO 2 . Surface morphology of the film was analysed by SEM studies. p-type nature and concentration of carriers was investigated by Hall effect measurement. The p-n heterojunction in the structure of Al/n-Si/p-CuFeO 2 /Al showed good rectifying behaviour with a forward and reverse currents ratio of 555 at 2 V. The turn-on voltage and reverse leakage current values were found to be 0.9 V and 4 μA at −2 V. Further, the conduction mechanism of forward bias voltage was controlled by thermionic emission (TE) and trap-space charge limited current (TCLC) mechanisms.

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P-type Ca doped SrCu2O2 thin film: Synthesis, optical property and photovoltaic application

Cited by 11 publications

References 39 publications

Solid-State Synthesis of Titanium-Doped Binary Strontium–Copper Oxide as a High-Performance Electrochemical Pseudocapacitive Electrode Nanomaterial

Solid-State Synthesis of Titanium-Doped Binary Strontium–Copper Oxide as a High-Performance Electrochemical Pseudocapacitive Electrode Nanomaterial

Numerical Study of Cu₂O, SrCu₂O₂, and CuAlO₂ as Hole‐Transport Materials for Application in Perovskite Solar Cells

Room temperature deposition of amorphous p-type CuFeO2 and fabrication of CuFeO2/n-Si heterojunction by RF sputtering method

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P-type Ca doped SrCu2O2 thin film: Synthesis, optical property and photovoltaic application

Cited by 11 publications

References 39 publications

Solid-State Synthesis of Titanium-Doped Binary Strontium–Copper Oxide as a High-Performance Electrochemical Pseudocapacitive Electrode Nanomaterial

Solid-State Synthesis of Titanium-Doped Binary Strontium–Copper Oxide as a High-Performance Electrochemical Pseudocapacitive Electrode Nanomaterial

Numerical Study of Cu2O, SrCu2O2, and CuAlO2 as Hole‐Transport Materials for Application in Perovskite Solar Cells

Room temperature deposition of amorphous p-type CuFeO2 and fabrication of CuFeO2/n-Si heterojunction by RF sputtering method

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Numerical Study of Cu₂O, SrCu₂O₂, and CuAlO₂ as Hole‐Transport Materials for Application in Perovskite Solar Cells