2000
DOI: 10.1063/1.1323523
|View full text |Cite
|
Sign up to set email alerts
|

Deep levels in GaAs due to Si δ doping

Abstract: ␦͑Si͒-doped GaAs samples grown by metalorganic vapor phase epitaxy are studied by capacitancevoltage and deep level transient spectroscopy ͑DLTS͒ techniques. A detailed analysis of the DLTS signal ͑including spatial profiles͒ is performed. DLTS spectra exhibit a clear development depending on the sheet dopant concentration ranging from 5ϫ10 14 to 2ϫ10 16 m Ϫ2 . Two observed peaks do not change its activation energy with the doping level while their amplitude increases rapidly when the doping rises. We assign t… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

1
1
0

Year Published

2002
2002
2021
2021

Publication Types

Select...
3
1
1

Relationship

0
5

Authors

Journals

citations
Cited by 6 publications
(2 citation statements)
references
References 49 publications
1
1
0
Order By: Relevance
“…indicate that with increasing t p , the peaks do not shift significantly toward lower temperatures. Based on this and on previous papers [25][26][27][28][29][30][31][32][33][34][35][36], we suggest that E1 and E3 originate from point defect located near dislocations, rather than from a dislocation core.…”
Section: Capture Kineticssupporting
confidence: 74%
See 1 more Smart Citation
“…indicate that with increasing t p , the peaks do not shift significantly toward lower temperatures. Based on this and on previous papers [25][26][27][28][29][30][31][32][33][34][35][36], we suggest that E1 and E3 originate from point defect located near dislocations, rather than from a dislocation core.…”
Section: Capture Kineticssupporting
confidence: 74%
“…The investigation of the signature of E2 led us to hypothesize that it is associated with the oxygen related center EL3 (oc-O As ) [26][27][28][29][30][31]. The signature of trap E3 was found to be similar to a well-known GaAs native defect called EL2, that corresponds to an As antisite defect As Ga [25,29,[31][32][33][34][35]. Furthermore, trap E3 corresponds to a trap which was found to be related to threading dislocations in [37].…”
Section: Arrhenius Plot Comparisonmentioning
confidence: 98%