2001
DOI: 10.1088/0964-1726/10/6/302
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Deep reactive ion etching: a promising technology for micro- and nanosatellites

Abstract: We discuss deep reactive ion etching (DRIE) as a promising technology that can be readily applied in the micromanufacturing of low-thrust propulsion systems to be used on future generations of micro-and nanosatellites. This dry processing technique permits the fabrication of high-aspect-ratio silicon structures and intricate morphologies, both with tight tolerances, in a repetitive and controllable fashion that lightweight space vehicles will exploit with the introduction of smaller thrust components for preci… Show more

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Cited by 51 publications
(22 citation statements)
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“…Peculiar of MEMS are the Deep Reactive Ion Etching (DRIE) steps applied to etch deep and very narrow apertures within the silicon wafer using the so called Bosch process [25] followed by thermal diffusion steps to form the n þ and p þ electrodes. Fig.…”
Section: D Processing Options and Manufacturersmentioning
confidence: 99%
“…Peculiar of MEMS are the Deep Reactive Ion Etching (DRIE) steps applied to etch deep and very narrow apertures within the silicon wafer using the so called Bosch process [25] followed by thermal diffusion steps to form the n þ and p þ electrodes. Fig.…”
Section: D Processing Options and Manufacturersmentioning
confidence: 99%
“…First, a 6-m thick layer of AZ9260 photoresist was spun on the wafer at 3 krpm for 30 s. The photoresist was patterned (Fig. 2a) and the wafer was etched to a depth of 180 m using DRIE which is based on the standard Bosch process [22][23][24]. This process involves the plasma of two gases that are introduced to the chamber containing the wafer in an alternating manner.…”
Section: Design and Fabricationmentioning
confidence: 99%
“…DRIE results in smooth side walls, making it particularly suitable for micronozzles [7], Figure 1. In these thrusters, heaters are embedded in the stagnation chamber to improve the specific impulse (efficiency).…”
Section: Introductionmentioning
confidence: 99%