Deep Sub-Micron Self-Aligned Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With Low-Resistance Source/Drain

Zhang, Yuhan; Li, Jiye; Zhang, Yuqing; Yang, Huan; Guan, Yuhang; Chan, Mansun; Lü, Lei; Zhang, Shengdong

doi:10.1109/led.2023.3287865

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2024

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Cited by 2 publications

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A Highly Parallel Capacitive Sensing Circuit for High-Throughput Thin-Film Transistor Digital Microfluidic Chips

Qian,

Liao,

Zhang

et al. 2024

2024 IEEE International Symposium on Circuits and Systems (ISCAS)

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A Highly Parallel Capacitive Sensing Circuit for High-Throughput Thin-Film Transistor Digital Microfluidic Chips

Qian,

Liao,

Zhang

et al. 2024

2024 IEEE International Symposium on Circuits and Systems (ISCAS)

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Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits

Liang,

Yan,

Wazir

et al. 2024

Nanomaterials

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As the trajectory of transistor scaling defined by Moore’s law encounters challenges, the paradigm of ever-evolving integrated circuit technology shifts to explore unconventional materials and architectures to sustain progress. Two-dimensional (2D) semiconductors, characterized by their atomic-scale thickness and exceptional electronic properties, have emerged as a beacon of promise in this quest for the continued advancement of field-effect transistor (FET) technology. The energy-efficient complementary circuit integration necessitates strategic engineering of both n-channel and p-channel 2D FETs to achieve symmetrical high performance. This intricate process mandates the realization of demanding device characteristics, including low contact resistance, precisely controlled doping schemes, high mobility, and seamless incorporation of high- κ dielectrics. Furthermore, the uniform growth of wafer-scale 2D film is imperative to mitigate defect density, minimize device-to-device variation, and establish pristine interfaces within the integrated circuits. This review examines the latest breakthroughs with a focus on the preparation of 2D channel materials and device engineering in advanced FET structures. It also extensively summarizes critical aspects such as the scalability and compatibility of 2D FET devices with existing manufacturing technologies, elucidating the synergistic relationships crucial for realizing efficient and high-performance 2D FETs. These findings extend to potential integrated circuit applications in diverse functionalities.

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Deep Sub-Micron Self-Aligned Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With Low-Resistance Source/Drain

Cited by 2 publications

References 29 publications

A Highly Parallel Capacitive Sensing Circuit for High-Throughput Thin-Film Transistor Digital Microfluidic Chips

A Highly Parallel Capacitive Sensing Circuit for High-Throughput Thin-Film Transistor Digital Microfluidic Chips

Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits

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