Deep-submicrometer DC-to-RF SOI MOSFET macro-model

Small-Signal and Noise Model of Fully Depleted Silicon-on-Insulator Metal–Oxide–Semiconductor Devices for Low-Noise Amplifier

“…There has been a report on an accurate model including NQS effects for both small-and largesignal analyses. 11) This model, however, requires a complicated parameter extraction process. For small-signal circuit performance parameters such as return loss and the gain of LNA, a more accurate small-signal model is required.…”

Deep-submicron drain current to radio frequency silicon on insulator metal oxide semiconductor field-effect transistor macromodel for designing microwave circuits

“…In each transistor we use the expressions of the quasistatic drain current and charges given by a new submicron fully depleted SOI MOSFET model we developed. This model is an extension of our previous model [9,11] to the deep-submicron regime, and it was validated for channel lengths down to 0.16 m. The model looks very adequate for the RF equivalent circuit, because it has the advantages of being physics based, scalable, charge conserving, and infinitely continuous through all operation regimes and accurately predicts the values of the intrinsic DC, small-, and large-signal parameters. The drain current and charge equations are written in terms of continuous expressions of the inversion charge densities at the source and drain ends of the channel; therefore, the same parameters can be used in all the equations.…”

“…This equivalent circuit is an enhancement of our previous one [11] in order to include all the extrinsic capacitances that represent the coupling effects between gate, drain, and source metallization levels, excluding the line access parameters (e.g., series inductors), which do not depend on the device size (but do on the circuit design). For simplicity, we consider one finger of width equal to W. Please note that in a single-gate fully depleted (FD) SOI MOSFET the substrate is actually the back gate (not the Si film between the front and the back oxides) that is floating.…”

Microwave Integrated CMOS Oscillators on Silicon-on-Insulator Substrate

“…The intrinsic model takes into account the channel length propagation delay by dividing the transistor channel into a series of shorter transistors. The model has been validated for frequencies up to 40 GHz and effective channel lengths down to 0.16 µm [5]. The main transistors parameters used for the oscillator design are given in Table 1.…”