Deep-ultraviolet resist contamination for copper/low-k dual-damascene patterning

Abstract

Articles you may be interested in200 mm wafer-scale substrate transfer of 0.13 μ m Cu ∕ low-k (Black Diamond™) dual-damascene interconnection to glass substrates Appl. Phys. Lett.Deep-ultraviolet ͑DUV͒ lithography is the preferred technique for high-resolution patterning at sub-180 nm technology nodes. The via first ͑VF͒ dual-damascene ͑DD͒ process is the most commonly used integration scheme for realizing the copper interconnects. A major problem encountered with the use of the DUV photoresist in the VFDD process is the presence of resist residues, also known as resist contamination or resist poisoning, which are difficult to remove after trench lithography. In this study, the causes of the DUV-resist contamination for a low-k organosilicate SiOC:H dielectric have been investigated. The effects of different types of underlying substrates and processes used for forming the DD structures on the resist contamination are studied and the physical mechanisms responsible for formation of resist residues are identified. The post via-etching solvent cleaning process is identified as a major contributor to resist contamination and solutions are proposed to minimize DD-process-induced DUV-resist contamination.

Defective Lithium Manganospinel Films with Excellent Electrochemical Characteristics

“…It is well known that the pulsed laser deposition process helps to maintain the stoichiometry of the films primarily because of the rapid ablation process and the relatively high partial pressure of oxygen in the chamber. 16,17 We have already demonstrated that the use of a UV-assisted deposition process leads to enhanced oxygen incorporation in several oxide based systems including…”

“…It is well known that the pulsed laser deposition process helps to maintain the stoichiometry of the films primarily because of the rapid ablation process and the relatively high partial pressure of oxygen in the chamber. 16,17 We have already demonstrated that the use of a UV-assisted deposition process leads to enhanced oxygen incorporation in several oxide based systems including Y 2 O 3 , ZrO 2 , BaSrTiO 3 , LaCaMnO 3 , LiMn 2 O 4 , and related systems. [14][15][16][17][18][19] Results and Discussion Figure 1 compares the X-ray diffraction ͑XRD͒ spectra from the films deposited on silicon by the pulsed laser deposition ͑PLD͒ vs. the UVPLD technique at the same processing temperature ͑600°C͒ and oxygen pressure ͑1 mbar͒.…”

“…16,17 We have already demonstrated that the use of a UV-assisted deposition process leads to enhanced oxygen incorporation in several oxide based systems including Y 2 O 3 , ZrO 2 , BaSrTiO 3 , LaCaMnO 3 , LiMn 2 O 4 , and related systems. [14][15][16][17][18][19] Results and Discussion Figure 1 compares the X-ray diffraction ͑XRD͒ spectra from the films deposited on silicon by the pulsed laser deposition ͑PLD͒ vs. the UVPLD technique at the same processing temperature ͑600°C͒ and oxygen pressure ͑1 mbar͒. The figure shows that the XRD peaks are qualitatively similar for both spectra with the exception that the peaks in the UVPLD film are much sharper, indicating a higher degree of crystallinity.…”

Hole-type two-dimensional photonic crystal fabricated in silicon on insulator wafers

“…3, where a PhC lattice of holes was patterned and some holes were not properly developed to result in missing holes. To prevent the formation of such deactivated CAR, the presence of weak base pyrimidine (C 4 H 4 N 2 ) resulting from treatment with solvent [32] should be avoided with minimization of resident time after solvent cleaning process for successful lithographic patterning.…”

The Influence of n‐AlGaN Inserted Layer on the Performance of Back‐Illuminated AlGaN‐Based p‐i‐n Ultraviolet Photodetectors

“…To suppress the influence of dislocations on reverse-bias leakage, many investigations have been carried out. Kumar et al [11] have demonstrated improved device performance of GaN-based UV-PDs by inserting ultrathin HfO 2 layer, which significantly reduced the dark current of the PDs and obtained excellent photoresponsivity. Sun et al [12] have introduced SiO 2 nanoparticles (SNPs) on the surface of GaN-based photodetector to passivate its dislocations so as to suppress the dark current and improve responsivity.…”