Defect-concentration dependence of electrical transport mechanisms in CuO nanowires

Abstract

Defect concentration is pinpointed to be the main parameter that determine the transportation in CuO nanowire by statistical results.

Size Distribution, Mechanical and Electrical Properties of CuO Nanowires Grown by Modified Thermal Oxidation Methods

“…As one can see, the calculated resistivities of CuOA nanowires (0.05–7 Ωm) are lower compared to the ones extracted for CuOE(-) nanowires (20–160 Ωm). This could be explained assuming increased defect concentration [ 30 ] for the nanowires synthesized with the electric field assisted approach and in presence of water vapour. Despite the differences in resistivity for CuOA and CuOE(-) nanowires, in general, the resistivities of both types of nanowires are comparable to previously reported values of 10–40 Ωm for CuO nanowires synthesized by simple thermal oxidation method and measured in field effect transistor geometries [ 9 , 23 ].…”

“…Due to a high melting point, CuO nanowires are able to withstand harsh environments, similarly to previously demonstrated high-temperature SiC switches [ 43 ]. Alternatively, such CuO nanowires are attractive for NEM switches and other devices with high operating voltages, where space-charge-limited currents are expected to dominate charge carrier transport in the nanowires [ 29 , 30 , 32 ].…”

“…The electrical transport mechanisms of similar nanowires contacted by metallic electrodes can be a combination of ohmic with resistivities of 10-40 Ωm [9,23], and space-charge-limited current (SCLC) [29,30], similar to other semiconductor nanowires [31,32]. Electrical properties of CuO nanowires were also observed to depend significantly on the defect concentrations [30].…”

“…Previously reported Young’s moduli for CuO nanowires synthesized by thermal oxidation were in the range of 70–300 GPa [ 13 ], and showed a significant increase for thin nanowires compared to bulk material [ 13 ]. The electrical transport mechanisms of similar nanowires contacted by metallic electrodes can be a combination of ohmic with resistivities of 10–40 Ωm [ 9 , 23 ], and space-charge-limited current (SCLC) [ 29 , 30 ], similar to other semiconductor nanowires [ 31 , 32 ]. Electrical properties of CuO nanowires were also observed to depend significantly on the defect concentrations [ 30 ].…”

Defect-Enhanced Field Emission from WO3 Nanowires for Flat-Panel X-ray Sources

“…Thus, the variation in resistivity with temperature for the defect-rich NW is not significant. 28,47 However, as the defect concentration of the less defect-rich NW is much lower, hopping is unable to take place or if it does, makes little contribution; instead, thermal activation will dominate in the transport process. The value of Q will be higher for the less defect-rich NW, and the variation of its resistivity with temperature will be more significant.…”