2006
DOI: 10.1016/j.physb.2005.12.154
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Defect engineering for 650nm high-power AlGaInP laser diodes

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Cited by 3 publications
(3 citation statements)
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“…H 2 and N 2 . While, Kim et al [10] observed two DLTS peaks corresponding to energy states, 0.35 -0.36 and 0.48 -0.5 eV in their four multiple quantum well (MQW) structured AlGaInP samples grown by MOCVD. None of the emission rate data of our defects were found to similar with the above published data.…”
Section: Resultsmentioning
confidence: 95%
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“…H 2 and N 2 . While, Kim et al [10] observed two DLTS peaks corresponding to energy states, 0.35 -0.36 and 0.48 -0.5 eV in their four multiple quantum well (MQW) structured AlGaInP samples grown by MOCVD. None of the emission rate data of our defects were found to similar with the above published data.…”
Section: Resultsmentioning
confidence: 95%
“…Recently a variety of light emitting diodes (LEDs), based on compound semiconductors have attracted considerable attention due to their structural versatility and unique properties [1] [2] such as high brightness and directionality, improved daytime visibility of various commercial outdoor displays, automobile indicators, traffic signals and use in high density external storage system [2]- [9]. AlGaInP based diodes, which emit wavelengths ranging from red to yellow green, are playing important role in the industry [1] [10] [11]. Although a high internal quantum efficiency has been achieved for AlGaInP based LEDs, however, external efficiency yet shows deterioration due to strong light absorption in GaAs substrate [1] [8] [9].…”
Section: Introductionmentioning
confidence: 99%
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