Defect formation in thin films of the semiconductor compound Cu(In,Ga)Se2 when bombarded by protons

Мудрый, А. В.; Ivanyukovich, A. V.; Yakushev, М. V.; Kulikauskas, V. S.; Chernysh, V. S.

doi:10.1007/s10812-006-0178-x

Cited by 6 publications

(3 citation statements)

References 16 publications

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“…This was due to an increase in the lifetime of non-equilibrium charge carriers due to curing by radiation defects of radiationless recombination channels, i.e., growth defects. It is important to note that similar effects in optical luminescence spectra were observed upon irradiation of CIGS films by deuterons and protons [15,23,24].…”

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confidence: 53%

Structural and optical properties of CdS/Cu(In,Ga)Se2 heterostructures irradiated by high-energy electrons*

et al. 2010

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Thin films of Cu(In, Ga)Se 2 (CIGS) with a Ga/(Ga + In) ratio of ~0.27 corresponding to the standard elemental composition for solar-energy transducers were grown on Mo-coated glass substrates by the Cu, In, Ga, and Se co-evaporation technique from different sources. Transmission (T), photoluminescence (PL), and photoluminescence excitation (PLE) spectra at 4.2 K were used to analyze electronic properties in the asgrown and electron-irradiated CIGS films. The band-gap energy (E g ) of the CIGS films measured using both transmission and PLE methods was found to be about 1.28 eV at 4.2 K. Two deep bands in the PL spectra of the irradiated CIGS films, P 1 at ~0.91 eV and P 2 at ~0.77 eV, have been detected. These bands are tentatively associated with copper atoms substituting indium (Cu In ) and indium vacancies V In , respectively, as the simplest radiation-induced defects.Introduction. Fabrication of highly efficient solar cells based on Cu(In,Ga)Se 2 (CIGS) semiconducting films is a critical and simultaneously complicated scientific and technical problem of modern semiconducting solar energy [1,2]. The development and improvement of the technology for preparing solar cells using CIGS compounds with the chalcopyrite structure has recently enabled efficiency records (~19.9%) to be set for all known thin-film semiconducting materials [1]. The stable operation of solar cells based on CIGS compounds that are used under ordinary terrestrial conditions and, especially, that are exposed to penetrating radiation (high-energy electrons, protons, etc.) in near-earth space orbits to an even greater extent stimulate further scientific and technological developments of semiconducting solar photovoltaics based on these materials [1][2][3][4][5]. Such promising developments prompt investigations that determine the criteria for radiation resistance of CIGS semiconducting compounds and solar cells based on them to the action of high-energy particles and that establish the nature of the radiation-induced defects at the atomic level [3][4][5][6]. New knowledge about the radiation physics of defects in CIGS material will indubitably assist a deeper understanding of the geometric and electronic structure of not only radiation defects but also growth defects formed during formation of CIGS thin films that determine the perfection of the material crystal structure. Herein we describe experiments that establish the nature of the radiation defects in CdS/Cu(In,Ga)Se 2 /Mo (CdS/CIGS/Mo) heterostructures, on which solar cells with efficiency ~12-14% are based [4,7,8].Experimental. The studied CIGS films were sputtered onto glass substrates coated with a thin film of Mo with simultaneous co-evaporation of Cu, In, Ga,[7][8][9]. Layers of CdS (~50 nm thick) were deposited by the standard chemical method in the corresponding solutions. The studied CdS/CIGS/Mo/glass structures consisted of a CdS buffer layer (~50 nm), CIGS films (~1.5 μm thick), a contact layer of Mo (~0.8 μm thick), and the glass substrate (2 mm thick). The elemental compositio...

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Structural and optical properties of CdS/Cu(In,Ga)Se2 heterostructures irradiated by high-energy electrons*

et al. 2010

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“…As it is shown in Refs. [17,19], the defects in CIS films are related with In and Se vacancy or with the In substitution by Cu atoms that leads to the copper concentration increase. As a result of the films irradiation with the 40 keV Xe + ions (fluence 1 × 10 14 cm −2 ) a defect formation enhancement occurs with the copper concentration increase to 46 at.% (Table II).…”

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“…Besides, defect formation in this layer by both deposition and operation can result in degradation as well as solar elements efficiency rise [10][11][12][13][14][15][16][17][18][19]. This indicates insufficient investigation of defect creation in the CuInSe 2 films system and poor knowledge of these processes that does not allow to realize CIS potential in full.…”

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Surface Composition of CIS Compound Affected by Xe⁺ Irradiation

et al. 2015

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The paper presents the results of investigation of element composition of CuInSe2 (CIS) compounds obtained by vertical Bridgman technique and on a glass substrate by the thermal deposition of Cu-In thin films with the subsequent annealing in selenium vapour. The depth profile distribution of elements in these samples using the Rutherford backscattering spectrometry/channeling technique in conjunction with the RUMP code simulation is also discussed.

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Effect of 4-MeV Electron Irradiation on Radiative Recombination of Cu(In,Ga)(S,Se)2 Thin Films in Solar Cells

Zhivulko,

Mudryi,

Borodavchenko

et al. 2024

J Appl Spectrosc

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Defect formation in thin films of the semiconductor compound Cu(In,Ga)Se2 when bombarded by protons

Abstract: UDC 621.378We have used low-temperature (4.2-78 K) photoluminescence to study defect formation processes in Cu(In,Ga)Se 2 films when bombarded by protons with energy 380 keV. We have observed formation of luminescence centers with deep levels at ,410 meV and 470 meV.

Cited by 6 publications

References 16 publications

Structural and optical properties of CdS/Cu(In,Ga)Se2 heterostructures irradiated by high-energy electrons*

Structural and optical properties of CdS/Cu(In,Ga)Se2 heterostructures irradiated by high-energy electrons*

Surface Composition of CIS Compound Affected by Xe⁺ Irradiation

Effect of 4-MeV Electron Irradiation on Radiative Recombination of Cu(In,Ga)(S,Se)2 Thin Films in Solar Cells

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