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The damage evolution in ion bombarded CuInSe2 single crystal has been studied using the RBS/channelling analysis with 2MeV He+ ions. 40keV Xe+ ions were implanted with fluences in the range from 1013 to 1016 cm'2 and an ion current density of 1.9|iA/cm2 at room temperature. It was found that the radiation accumulation follows a linear function in a double logarithmic plot with slope m=1.5. The saturation level of the damage was achieved at a fluence of about 1015 cm'2 A heterogeneous mechanism of the damage accumulation in the CuInSe2 crystal irradiated with ions with mass equal to or greater than xenon mass is suggested.

&ЕОАПНЕ& /тот Surface and Coatings Technology 74-75 (1995) [945][946][947][948] Deposition of metal layers on carbon assisted with the same metal' ion radiation

The investigation of influence of Xe + ions irradiation of graphite on its surface topography and wettability was conducted. With the increase of the irradiation dose, the roughness average increases rapidly at first (when the sample was irradiated at the dose of 1 × 10 14 cm −2 ) and then decreases slowly. The atomic force microscopy three-dimensional pictures showed that after irradiation of graphite of Xe + ions with a dose of 3 × 10 15 cm −2 hemispherical grains (from 0.2 to 0.8 µm in diameter) appear on its surface. Surface water contact angle measurement showed that irradiation of graphite by Xe + ions leads to a hydrophobic surface of graphite. We have observed that irradiation of graphite by Xe + ions can be used for obtaining graphite surface with desirable topography and water wettability.